公开(公告)号：US20170301662A1

公开(公告)日：2017-10-19

申请号：US15488818

申请日：2017-04-17

Applicant: DENSO CORPORATION

Inventor： Mitsunori KIMURA ,  Hiroshi SHIMIZU ,  Kengo MOCHIKI ,  Yasuyuki OHKOUCHI ,  Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA

IPC: H01L25/18 ,  H01L23/495 ,  H01L23/433 ,  H01L23/00 ,  H01L25/07 ,  H01L25/11 ,  H01L23/473

Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

公开(公告)号：US20170301614A1

公开(公告)日：2017-10-19

申请号：US15491028

申请日：2017-04-19

Applicant: DENSO CORPORATION

Inventor： Mitsunori KIMURA ,  Hiroshi SHIMIZU ,  Kengo MOCHIKI ,  Yasuyuki OHKOUCHI ,  Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA

IPC: H01L23/495 ,  H01L27/06 ,  H01L23/31 ,  H01L23/00 ,  H02P27/06 ,  H02M7/537

CPC classification number: H01L23/49568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4012 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L25/07 ,  H01L27/0623 ,  H01L2224/32245 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M1/088 ,  H02M7/003 ,  H02M7/537 ,  H02M2001/327 ,  H02P27/06

Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.