公开(公告)号：US10424570B2

公开(公告)日：2019-09-24

申请号：US15488818

申请日：2017-04-17

Applicant: DENSO CORPORATION

Inventor： Mitsunori Kimura ,  Hiroshi Shimizu ,  Kengo Mochiki ,  Yasuyuki Ohkouchi ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima

IPC: H01L25/18 ,  H01L23/473 ,  H01L23/495 ,  H01L25/07 ,  H01L25/11 ,  H05K7/20 ,  H05K1/02 ,  H01L23/433 ,  H01L23/40 ,  H01L23/00

Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

公开(公告)号：US10396651B2

公开(公告)日：2019-08-27

申请号：US16046278

申请日：2018-07-26

Applicant: DENSO CORPORATION

Inventor： Kengo Mochiki ,  Mitsunori Kimura ,  Hiroshi Shimizu ,  Yasuyuki Ohkouchi ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima

IPC: H02M1/088 ,  H01L27/06 ,  H02M3/158 ,  H02M7/537 ,  H03K17/081 ,  H03K17/0412 ,  H03K17/687 ,  H02M1/08 ,  H02M7/00 ,  H02M7/5387 ,  B60L3/00 ,  B60L15/00 ,  H02P27/06 ,  H03K17/12 ,  H02M1/00 ,  H02P27/08

Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.

公开(公告)号：US09735700B2

公开(公告)日：2017-08-15

申请号：US15013503

申请日：2016-02-02

Applicant: DENSO CORPORATION

Inventor： Kazuya Takeuchi ,  Tetsuya Matsuoka ,  Ryota Tanabe

IPC: H05K7/20 ,  H02M7/00

CPC classification number: H02M7/003 ,  H05K7/20263 ,  H05K7/20927

Abstract: A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged. The capacitor includes a capacitor element which includes a dielectric body and a metal layer formed on a surface of the dielectric body, an electrode part connected to the metal layer and a bus bar connected to the electrode part. Part of the bus bar is interposed in the arranging direction between the heat dissipation member and the capacitor element.

公开(公告)号：US11563384B2

公开(公告)日：2023-01-24

申请号：US17170978

申请日：2021-02-09

Applicant: DENSO CORPORATION

Inventor： Masaya Tonomoto ,  Tetsuya Matsuoka ,  Hiromi Ichijo

IPC: H05K5/02 ,  H02M7/00 ,  H05K7/14

Abstract: In a power converter, electronic components constituting a power conversion circuit is provided. A capacitor module and a converter case are also provided in the power converter. Fastening members, which include a first fastening member and a second fastening member, are configured to fasten the capacitor module to the converter case. The first and second fastening members are mounted on the inner bottom surface of the converter case. At least one of the electronic components is mounted to the capacitor module and is arranged between the first fastening member and the second fastening member when viewed in a view direction perpendicular to an alignment direction of the first and second fastening members. The view direction is parallel to the inner bottom surface of the converter case.

公开(公告)号：US10135356B2

公开(公告)日：2018-11-20

申请号：US15655027

申请日：2017-07-20

Applicant: DENSO CORPORATION

Inventor： Kazuya Takeuchi ,  Tetsuya Matsuoka ,  Ryota Tanabe

IPC: H05K7/20 ,  H02M7/00

Abstract: A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged. The capacitor includes a capacitor element which includes a dielectric body and a metal layer formed on a surface of the dielectric body, an electrode part connected to the metal layer and a bus bar connected to the electrode part. Part of the bus bar is interposed in the arranging direction between the heat dissipation member and the capacitor element.

公开(公告)号：US10116213B2

公开(公告)日：2018-10-30

申请号：US15491307

申请日：2017-04-19

Applicant: DENSO CORPORATION

Inventor： Hiroshi Shimizu ,  Mitsunori Kimura ,  Kengo Mochiki ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima ,  Yasuyuki Ohkouchi

IPC: H01L27/15 ,  H02M3/158 ,  H01L25/07 ,  H01L29/16 ,  H01L29/20 ,  H01L29/739 ,  H01L29/861

Abstract: A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.

公开(公告)号：US10090761B2

公开(公告)日：2018-10-02

申请号：US15490305

申请日：2017-04-18

Applicant: DENSO CORPORATION

Inventor： Hiroshi Shimizu ,  Mitsunori Kimura ,  Kengo Mochiki ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima ,  Yasuyuki Ohkouchi

IPC: H02M3/158 ,  H02M7/5387 ,  H02P27/06 ,  H02M1/00

Abstract: A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.

公开(公告)号：US09713293B2

公开(公告)日：2017-07-18

申请号：US14919161

申请日：2015-10-21

Applicant: DENSO CORPORATION

Inventor： Kazuya Takeuchi ,  Makoto Okamura ,  Yuuichi Handa ,  Naoki Hirasawa ,  Hiromi Ichijo ,  Ryota Tanabe ,  Tetsuya Matsuoka

IPC: H05K7/20 ,  H01L23/473 ,  H01G4/35 ,  H01G4/40 ,  H01G2/08 ,  H01G4/236 ,  H02M7/00 ,  H01L23/40

CPC classification number: H05K7/20927 ,  H01G2/08 ,  H01G4/236 ,  H01G4/35 ,  H01G4/40 ,  H01L23/473 ,  H01L2023/4025 ,  H02M7/003 ,  Y02T10/7022

Abstract: An electric power converter includes a semiconductor module constituting a power conversion circuit, a capacitor electrically connected to the semiconductor module, and a cooling member for cooling the capacitor. The capacitor includes an element body provided with internal electrode, and a pair of end-face-electrodes provided on both end faces of the element body and connected to the internal electrode. The pair of end-face-electrodes are connected with a pair of bus bars, respectively, in a manner of surface contact. The capacitor is disposed in a state where one of the pair of end-face-electrodes is facing the cooling member. The end-face-electrode facing the cooling member is in contact with the cooling member via the bus bar.