公开(公告)号：US20170033702A1

公开(公告)日：2017-02-02

申请号：US15302822

申请日：2015-04-06

Applicant: DENSO CORPORATION

Inventor： Shuji KURAUCHI ,  Katsutoyo MISAWA ,  Shotaro YAMASAKI ,  Yuuichi HANDA ,  Yuuki TAKEMOTO

IPC: H02M3/335

CPC classification number: H02M3/33569 ,  H01F27/40 ,  H01L25/16 ,  H02M3/337 ,  H02M7/003

Abstract: In a power supply apparatus, one of a transformer and a first semiconductor device is stacked on the other thereof to constitute a stack assembly. The stack assembly, a second semiconductor device, and a choke coil are located on the major surface. A primary direct-current wire, which connects the first semiconductor device to a direct-current power source, is drawn out from a first predetermined portion of the stack assembly. A primary alternating-current wire, which connects the first semiconductor device and the transformer, is drawn out from a second predetermined portion of the stack assembly. The primary direct-current wire and the primary alternating-current wire are located to be separated from each other via at least a part of the stack assembly.

Abstract translation: 在供电装置中，变压器和第一半导体器件中的一个堆叠在另一个上以构成堆叠组件。 堆叠组件，第二半导体器件和扼流线圈位于主表面上。 将第一半导体器件连接到直流电源的初级直流线从堆叠组件的第一预定部分拉出。 连接第一半导体器件和变压器的初级交流电线从堆叠组件的第二预定部分被拉出。 主要直流电线和初级交流电线被定位成通过堆叠组件的至少一部分彼此分离。

公开(公告)号：US20150036388A1

公开(公告)日：2015-02-05

申请号：US14447118

申请日：2014-07-30

Applicant: DENSO CORPORATION

Inventor： Yuuichi HANDA ,  Katsutoyo MISAWA ,  Yuuki TAKEMOTO ,  Shotaro YAMASAKI ,  Shuji KURAUCHI

IPC: H02M1/44 ,  H02M3/24

CPC classification number: H02M1/44 ,  H01F27/06 ,  H02M3/24 ,  H02M3/28

Abstract: A power-supply apparatus is provided which includes a transformer, a primary semiconductor unit, a secondary semiconductor unit, and a secondary electronic device. Each of the primary semiconductor unit and the secondary semiconductor units has a plurality of semiconductor devices installed therein. The transformer, the primary semiconductor unit, the secondary semiconductor unit, and the secondary electronic device are electrically joined through connecting conductors. The transformer is laid on the primary semiconductor unit to make a first stack. Similarly, the secondary electronic device is laid on the secondary semiconductor unit. This permits the power-supply apparatus to be reduced in overall size thereof and minimizes adverse effects of electromagnetic noise to ensure the high efficiency in power supply operation.

Abstract translation: 提供一种电源装置，其包括变压器，初级半导体单元，次级半导体单元和次级电子设备。 主半导体单元和二次半导体单元中的每一个具有安装在其中的多个半导体器件。 变压器，初级半导体单元，二次半导体单元和次级电子器件通过连接导体电连接。 变压器铺设在初级半导体单元上以制成第一堆叠。 类似地，二次电子器件被放置在次级半导体单元上。 这允许电源装置的总体尺寸减小，并且最小化电磁噪声的不利影响，以确保电力供应操作的高效率。

公开(公告)号：US20220255445A1

公开(公告)日：2022-08-11

申请号：US17730417

申请日：2022-04-27

Applicant: DENSO CORPORATION

Inventor： Naoto KOBAYASHI ,  Syuji KURAUCHI ,  Yuuichi HANDA

IPC: H02M3/335 ,  H02M1/32 ,  H02M3/158

Abstract: A power conversion apparatus includes an input side terminal, an output side terminal and a switch unit, switching the switch unit between ON and OFF during a power transmission. The switch unit has characteristics that, in the case where a reverse current flows through the switch unit, the larger a gate voltage thereof in a negative side, the larger a conduction loss occurring when the reverse current flows. The power conversion apparatus is provided with a control unit that increases, when determined that the increase request for increasing the heating value is present, the gate voltage of the switch unit to the negative side when turned OFF compared to a case where no increase request for increasing the heating value is present, the reverse current flowing through the switch unit during the power transmission.

公开(公告)号：US20170085181A1

公开(公告)日：2017-03-23

申请号：US14857023

申请日：2015-09-17

Applicant: DENSO CORPORATION

Inventor： Kenji TOMITA ,  Kimikazu NAKAMURA ,  Shinya GOTO ,  Katsutoyo MISAWA ,  Yuuichi HANDA ,  Seiji IYASU

IPC: H02M3/335

CPC classification number: H02M3/33507 ,  H02M3/3378

Abstract: A power conversion apparatus supplies power from a DC power supply to a capacitive load by a current input push-pull DCDC converter provided with switching elements Q1 and Q2. When a capacitive load voltage is not larger than a second predetermined value, a first mode is used which turns ON one of the switching elements Q1 and Q2 alternated with turning OFF both. When the capacitive load voltage is larger than the second predetermined value but not larger than a first predetermined value, a second mode is used which turns ON both of the switching elements Q1 and Q2, then turns ON one of them, then turns OFF both, sequentially. When the capacitive load voltage is larger than the first predetermined value, a third mode is used, turning ON both of the switching elements Q1 and Q2 alternated with turning ON one of them.

公开(公告)号：US20160094134A1

公开(公告)日：2016-03-31

申请号：US14863801

申请日：2015-09-24

Applicant: DENSO CORPORATION

Inventor： Seiji IYASU ,  Kimikazu NAKAMURA ,  Yuuichi HANDA

IPC: H02M3/335

CPC classification number: H02M3/33515 ,  H02M3/3353 ,  H02M3/33569 ,  H02M3/3378 ,  H02M2001/0019 ,  H02M2001/325

Abstract: Power conversion apparatus converts input voltage and supplies output voltage to the electric load. The apparatus includes a semiconductor switch switches between open and closed states to regulate voltage control current for controlling output voltage, a first voltage detection section detects remote voltage being applied to the electric load as output voltage, a second voltage detection section detects a local voltage being applied to the output terminal as output voltage, a target current calculation section calculates target current which is the voltage control current target value, based on voltage deviation between target voltage which is the output voltage target value and either remote voltage or local voltage, and a switch control section controls the semiconductor switch so voltage control current becomes target current, to regulate output voltage to target voltage. The target current calculation section calculates the target current by using one of the remote or local voltage corresponds to a smaller target current.

Abstract translation: 电力转换装置转换输入电压并向电负载提供输出电压。 所述装置包括半导体开关，其在开状态和闭态之间切换以调节用于控制输出电压的电压控制电流，第一电压检测部分检测施加到电负载的远程电压作为输出电压，第二电压检测部分检测局部电压 施加到输出端子作为输出电压，目标电流计算部分基于作为输出电压目标值的目标电压与远程电压或局部电压之间的电压偏差来计算作为电压控制电流目标值的目标电流，以及 开关控制部分控制半导体开关，使电压控制电流成为目标电流，以调节输出电压到目标电压。 目标电流计算部分通过使用对应于较小目标电流的远程或局部电压之一来计算目标电流。

公开(公告)号：US20150029759A1

公开(公告)日：2015-01-29

申请号：US14339859

申请日：2014-07-24

Applicant: DENSO CORPORATION

Inventor： Yuuki TAKEMOTO ,  Katsutoyo MISAWA ,  Yuuichi HANDA ,  Syotarou YAMASAKI ,  Syuji KURAUCHI ,  Kenta HATAKENAKA

IPC: H02M3/335

CPC classification number: H02M3/33507 ,  B60L11/00 ,  B60L15/007 ,  B60L2210/10 ,  H01F5/00 ,  H02M3/00 ,  H02M3/337 ,  H05K1/0263 ,  H05K1/18 ,  H05K2201/1003 ,  H05K2201/10166 ,  H05K2201/10174 ,  H05K2201/10515 ,  Y02T10/645 ,  Y02T10/7216

Abstract: An electric power source device has a transformer, a primary-side semiconductor module, a secondary-side semiconductor module, a secondary-side electrical component, a base plate and a circuit substrate on which substrate-side electrical components are mounted. The primary-side semiconductor module has a larger exterior size than the secondary-side electrical component. The primary-side semiconductor module and the secondary-side electrical component form a stacked section. In the stacked section, the secondary-side electrical component is stacked, in a vertical direction, i.e. a direction of a normal line of a mounting surface of the base plate, on the primary-side semiconductor module. The primary-side semiconductor module is directly mounted on the mounting surface. At least a part of the substrate-side electrical components is arranged inside of the primary-side semiconductor module in a horizontal direction, and inside of a second surface of the stacked section toward the mounting surface along the normal line.

Abstract translation: 电源装置具有安装有基板侧电气部件的变压器，初级侧半导体模块，二次侧半导体模块，二次侧电气部件，基板以及电路基板。 初级侧半导体模块具有比次级侧电气部件更大的外部尺寸。 初级侧半导体模块和次级侧电气部件形成堆叠部。 在堆叠部分中，次级侧电气元件在初级侧半导体模块上沿垂直方向，即基板的安装表面的法线方向堆叠。 初级侧半导体模块直接安装在安装面上。 基板侧电气部件的至少一部分在水平方向配置在一次侧半导体模块的内部，在堆叠部的第二面的内侧沿着法线配置在安装面上。