PEELING METHOD AND PEELING APPARATUS

    公开(公告)号:US20220379520A1

    公开(公告)日:2022-12-01

    申请号:US17664478

    申请日:2022-05-23

    Abstract: An ultrasonic wave is applied to an upper surface of an ingot via a liquid layer, in a state in which an outer circumferential region of a lower surface of the ingot is sucked. A lower side around an outer circumferential arc-shaped portion of the lower surface of the ingot is open so that liquid that serves as a medium of the ultrasonic wave does not collect around the outer circumferential arc-shaped portion of the lower surface of the ingot. As a result, a peel-off layer formed in the ingot is not immersed in liquid when an ultrasonic wave is applied to the upper surface of the ingot via the liquid layer. Consequently, even when the ingot becomes thin, the ingot can be separated at the peel-off layer, and a wafer can be peeled off from the ingot.

    WAFER PRODUCING METHOD AND WAFER PRODUCING APPARATUS

    公开(公告)号:US20190228980A1

    公开(公告)日:2019-07-25

    申请号:US16251876

    申请日:2019-01-18

    Abstract: A wafer producing method of producing a wafer from a hexagonal single crystal ingot, the method including positioning a focal point of a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot and applying the laser beam to the hexagonal single crystal ingot to form a separation layer, positioning an ultrasonic wave generating unit so as to face the wafer to be produced with a layer of water interposed therebetween and generating an ultrasonic wave through the layer of water to break down the separation layer, and detecting separation of the wafer to be produced from the hexagonal single crystal ingot according to change in sound.

    WAFER PRODUCING METHOD AND WAFER PRODUCING APPARATUS

    公开(公告)号:US20190148164A1

    公开(公告)日:2019-05-16

    申请号:US16192250

    申请日:2018-11-15

    Abstract: A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

    PEELING APPARATUS
    14.
    发明公开
    PEELING APPARATUS 审中-公开

    公开(公告)号:US20230373129A1

    公开(公告)日:2023-11-23

    申请号:US18319607

    申请日:2023-05-18

    Abstract: A peeling apparatus includes a holding table that holds an ingot, a water supply unit that forms a layer of water on an upper surface of the ingot, an ultrasonic unit that applies an ultrasonic wave to the upper surface of the ingot through the layer of water, a peeling confirmation unit that confirms peeling-off of a wafer to be manufactured, a wafer delivery unit that lowers a suction pad having a suction surface facing the upper surface of the ingot, to hold the wafer to be manufactured on the suction surface under suction, and delivers the wafer from the ingot, and a controller. After the peeling-off of the wafer is confirmed by the peeling confirmation unit, the controller positions the water supply unit, the ultrasonic unit, and the peeling confirmation unit at retracted positions and operates the wafer delivery unit to deliver the wafer from the ingot.

    LASER PROCESSING APPARATUS
    15.
    发明公开

    公开(公告)号:US20230364717A1

    公开(公告)日:2023-11-16

    申请号:US18307956

    申请日:2023-04-27

    Inventor: Ryohei YAMAMOTO

    CPC classification number: B23K26/53 B23K26/032 B23K26/083 B23K2103/56

    Abstract: A laser processing apparatus includes a first reflected light detection unit having a first light receiving element that detects inspection light reflected by a crack in an inspection region located on one side of a focal point in a direction along an X-axis, a second reflected light detection unit having a second light receiving element that detects the inspection light reflected by the crack in the inspection region located on the other side of the focal point in the direction along the X-axis, and a controller.

    PEELING APPARATUS
    16.
    发明申请

    公开(公告)号:US20220410431A1

    公开(公告)日:2022-12-29

    申请号:US17805724

    申请日:2022-06-07

    Abstract: There is provided a peeling apparatus including an ingot holding unit that has a holding surface for holding an ingot, a wafer holding unit that is capable of approaching and separating from the ingot holding unit and has a holding surface for holding under suction a wafer to be produced, and a cleaning brush that cleans peel-off surfaces at which the wafer to be produced has been peeled off from the ingot and thereby removes peeling swarf.

    DETECTING APPARATUS
    17.
    发明申请

    公开(公告)号:US20220268700A1

    公开(公告)日:2022-08-25

    申请号:US17649714

    申请日:2022-02-02

    Abstract: A detecting apparatus for use in specifying regions having different impurity concentrations in an ingot includes an ingot holding unit having a holding surface for holding the ingot thereon, an excitation light source for applying excitation light having a predetermined wavelength to a face side of the ingot held on the holding surface, and a photodetector for detecting fluorescence emitted from the ingot upon exposure to the excitation light and generating an electric signal representing a number of photons of only light whose wavelength is in an infrared radiation range, of the detected fluorescence.

    WAFER MANUFACTURING APPARATUS
    18.
    发明申请

    公开(公告)号:US20220181174A1

    公开(公告)日:2022-06-09

    申请号:US17457706

    申请日:2021-12-06

    Abstract: A wafer manufacturing apparatus includes an ingot grinding unit for grinding an upper surface of an ingot to planarize the upper surface of the ingot, a laser applying unit for forming peel-off layers in the ingot at a depth therein, which corresponds to the thickness of a wafer to be produced from the ingot, from the upper surface of the ingot, a wafer peeling unit for holding the upper surface of the ingot and peeling off a wafer from the ingot at the peel-off layers, a tray having an ingot support portion and a wafer support portion, and a belt conveyor unit for delivering the ingot supported on the tray between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

    WAFER PRODUCING METHOD AND WAFER PRODUCING APPARATUS

    公开(公告)号:US20200343102A1

    公开(公告)日:2020-10-29

    申请号:US16926851

    申请日:2020-07-13

    Abstract: A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

    METHOD OF PRODUCING WAFER AND APPARATUS FOR PRODUCING WAFER

    公开(公告)号:US20190304800A1

    公开(公告)日:2019-10-03

    申请号:US16365014

    申请日:2019-03-26

    Inventor: Ryohei YAMAMOTO

    Abstract: A method of producing a wafer includes a peel-off layer forming step to form a peel-off layer in a hexagonal single-crystal ingot by applying a laser beam having a wavelength transmittable through the hexagonal single-crystal ingot while positioning a focal point of the laser beam in the hexagonal single-crystal ingot at a depth corresponding to the thickness of a wafer to be produced from an end face of the hexagonal single-crystal ingot, an ultrasonic wave generating step to generate ultrasonic waves from an ultrasonic wave generating unit positioned in facing relation to the wafer to be produced across a water layer interposed therebetween, thereby to break the peel-off layer, and a peel-off detecting step to detect when the wafer to be produced is peeled off the hexagonal single-crystal ingot by positioning an image capturing unit sideways of the wafer to be produced.

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