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    Mobile circuit robust against input voltage change
    11.
    发明申请
    Mobile circuit robust against input voltage change 审中-公开
    移动电路对输入电压变化的鲁棒性

    公开(公告)号：US20080204080A1

    公开(公告)日：2008-08-28

    申请号：US12004739

    申请日：2007-12-21

    申请人： Myoung-hoon Yoon ,  Sang-hoon Lee

    发明人： Myoung-hoon Yoon ,  Sang-hoon Lee

    IPC分类号： H03K19/10 ,  H03K19/0175

    CPC分类号： H03K19/00315

    摘要： An inverting flip-flop (F/F) circuit type monostable-bistable transition logic element (MOBILE) circuit that uses resonant tunneling diodes (RTDs) and can prevent a malfunction caused by low peak-to-valley current ratio (PVCR) characteristics of the RTD includes an input data conversion circuit and an inverting F/F circuit. The input data conversion circuit receives input data and converts a logic level of the input data according to a logic level of output data of the MOBILE circuit. The inverting F/F circuit inverts a logic level of data output from the input data conversion circuit and outputs the output data. Accordingly, even when a logic level of input data changes from LOW to HIGH, the logic level of output data can be maintained HIGH in the inverting F/F type MOBILE circuit constructed using silicon semiconductor based RTDs with a small PVCR. Therefore, it is possible to enhance the performance of the inverting F/F circuit type MOBILE circuit.

    摘要翻译： 使用谐振隧道二极管（RTD）的反相触发器（F / F）电路型单稳态双稳态转换逻辑元件（MOBILE）电路，并且可以防止由低峰值电流比（PVCR）特性引起的故障 RTD包括输入数据转换电路和反相F / F电路。 输入数据转换电路根据MOBILE电路的输出数据的逻辑电平接收输入数据并转换输入数据的逻辑电平。 反相F / F电路将从输入数据转换电路输出的数据的逻辑电平反相并输出输出数据。 因此，即使当输入数据的逻辑电平从低电平变为高电平时，在使用具有小PVCR的基于硅半导体的RTD构成的反相F / F型移动电路中，输出数据的逻辑电平也可以维持为高。 因此，可以提高反相F / F电路型MOBILE电路的性能。

    THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME
    12.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME 有权
    薄膜晶体管基板和具有该薄膜晶体管的液晶显示器件

    公开(公告)号：US20080198319A1

    公开(公告)日：2008-08-21

    申请号：US12018576

    申请日：2008-01-23

    申请人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

    发明人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/13454 ,  G02F1/136213

    摘要： A liquid crystal display device with a display region and a non-display region surrounding the display region, the liquid crystal display device comprising: a first substrate; a second substrate which faces the first substrate; and a liquid crystal layer which is interposed between the first substrate and the second substrate, the first substrate comprising: a first insulating substrate; gate and data lines which are formed on the first insulating substrate and intersecting each other; a pixel thin film transistor formed on the display region and electrically connected to the gate and data lines; a pixel electrode electrically connected to the pixel thin film transistor; a gate driver formed on the non-display region and connected to the gate line to drive the gate line; and a direct current (DC)/DC converter formed on the non-display region and comprises a converter thin film transistor and a capacitance part; the capacitance part includes: a first capacitance part which comprises a first electrode, a first dielectric layer formed on the first electrode, and a second electrode formed on the first dielectric layer; and a second capacitance part which comprises the second electrode, a second dielectric layer formed on the second electrode, and a third electrode formed on the second dielectric layer.

    摘要翻译： 一种具有显示区域和围绕显示区域的非显示区域的液晶显示装置，所述液晶显示装置包括：第一基板; 面向所述第一基板的第二基板; 以及介于所述第一基板和所述第二基板之间的液晶层，所述第一基板包括：第一绝缘基板; 栅极和数据线，其形成在第一绝缘基板上并彼此交叉; 形成在所述显示区域上并电连接到所述栅极和数据线的像素薄膜晶体管; 与像素薄膜晶体管电连接的像素电极; 栅极驱动器，形成在非显示区域上并连接到栅极线以驱动栅极线; 以及形成在所述非显示区域上并包括转换器薄膜晶体管和电容部分的直流（DC）/ DC转换器; 电容部包括：第一电容部，其包括第一电极，形成在第一电极上的第一电介质层和形成在第一电介质层上的第二电极; 以及第二电容部，其包括所述第二电极，形成在所述第二电极上的第二电介质层和形成在所述第二电介质层上的第三电极。

    Light emitting device and method of controlling the same
    13.
    发明申请
    Light emitting device and method of controlling the same 有权
    发光装置及其控制方法

    公开(公告)号：US20070279371A1

    公开(公告)日：2007-12-06

    申请号：US11634842

    申请日：2006-12-07

    申请人： Sang-hoon Lee ,  Jeong-il Kang

    发明人： Sang-hoon Lee ,  Jeong-il Kang

    IPC分类号： G09G3/36

    CPC分类号： H05B33/0851 ,  H05B33/0815

    摘要： Provided is a light emitting device and a method of controlling the same are disclosed. The light emitting unit includes a power supply unit for supplying a drive voltage to the light emitting unit, and a control unit for comparing a first current level previously applied to the light emitting unit with a second current level to be applied to the light emitting unit in accordance with image information to be displayed using the light emitting unit, and controlling a voltage level applied to the light emitting unit based on a result of comparison.

    摘要翻译： 提供了一种发光器件及其控制方法。 发光单元包括用于向发光单元提供驱动电压的电源单元和用于将先前施加到发光单元的第一电流水平与施加到发光单元的第二电流水平进行比较的控制单元 根据要使用发光单元显示的图像信息，以及基于比较的结果控制施加到发光单元的电压电平。

    Light emitting apparatus and control method therefor
    14.
    发明申请
    Light emitting apparatus and control method therefor 失效
    发光装置及其控制方法

    公开(公告)号：US20070217220A1

    公开(公告)日：2007-09-20

    申请号：US11653389

    申请日：2007-01-16

    申请人： Jeong-il Kang ,  Sang-hoon Lee

    发明人： Jeong-il Kang ,  Sang-hoon Lee

    IPC分类号： G01B13/18 ,  G01B21/22 ,  F21V7/04 ,  G01B5/00

    CPC分类号： H05B33/0866 ,  H05B33/0815 ,  H05B33/0818 ,  H05B33/086 ,  Y02B20/346

    摘要： A light emitting apparatus and control method are provided. The light-emitting apparatus includes a light emitting part; a power supplying part; a switching part which is serially coupled to the light emitting part; and a control part which compares a switch voltage level with a comparison level, and controls the power supplying part to supply the driving power having a voltage level decreased by a reference level if the switch voltage level is higher than the comparison level. The control method includes supplying a driving power to the light emitting part; emitting light; measuring a switch voltage level across the switching part, and decreasing a voltage level of the driving power by a reference level if the switch voltage level is higher than the comparison level.

    摘要翻译： 提供一种发光装置和控制方法。 发光装置包括发光部分; 供电部; 与发光部串联连接的开关部; 以及控制部分，其将开关电压电平与比较电平进行比较，并且如果所述开关电压电平高于所述比较电平，则控制所述电力供应部分将具有降低了参考电平的电压电平的驱动功率提供。 控制方法包括向发光部提供驱动电力; 发光; 测量开关部分的开关电压电平，并且如果开关电压电平高于比较电平，则将驱动功率的电压电平降低基准电平。

    Method of fabricating CMOS transistor that prevents gate thinning
    15.
    发明授权
    Method of fabricating CMOS transistor that prevents gate thinning 有权
    制造防止栅极薄化的CMOS晶体管的方法

    公开(公告)号：US07268029B2

    公开(公告)日：2007-09-11

    申请号：US10994042

    申请日：2004-11-19

    申请人： Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

    发明人： Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823842 ,  H01L21/31111 ,  H01L21/31144

    摘要： Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.

    摘要翻译： 提供一种制造CMOS晶体管的方法，其中在半导体衬底上形成用作栅极的多晶硅层之后，在多晶硅层上形成曝光n-MOS晶体管区的光刻胶图案。 使用光致抗蚀剂图案作为掩模，在n-MOS晶体管区域的多晶硅层中注入杂质，除去光致抗蚀剂图案。 如果n-MOS晶体管区域的多晶硅层通过注入杂质而损坏，则n-MOS晶体管区域的多晶硅层退火，并且p-MOS晶体管栅极和n-MOS晶体管栅极由 构图多晶硅层。 用氢氟酸（HF）溶液清洗半导体衬底，p-MOS晶体管栅极和n-MOS晶体管栅极，而不会降低n-MOS晶体管栅极的高度。

    Simplified method for extracting model parameter sets and method for statistically simulating integrated circuit using the same
    16.
    发明授权
    Simplified method for extracting model parameter sets and method for statistically simulating integrated circuit using the same 失效
    用于提取模型参数集的简化方法和用于统计模拟集成电路的方法

    公开(公告)号：US06795800B1

    公开(公告)日：2004-09-21

    申请号：US09696816

    申请日：2000-10-25

    申请人： Sang-hoon Lee

    发明人： Sang-hoon Lee

    IPC分类号： G06F760

    CPC分类号： G06F17/5036

    摘要： A method of simulating the performance of an integrated circuit design is provided. In the case of extracting n model parameter sets in order to statistically simulate the performance of the integrated circuit, it is possible to significantly reduce the time spent on extracting the model parameters by extracting only one model parameter set using the I-V characteristic curve created by directly measuring the I-V characteristic of the device as a target function and extracting the remaining (n−1) model parameter sets using the main characteristic data (ET data) which can be easily measured such as the threshold voltage or the saturation current of the device as the target function. Since the main characteristic data (ET data) of the device is used as the target function, it is possible to easily extract the model parameter set when the characteristics of the device are changed. Therefore, the designer can simply estimate the influence (sensitivity) that the changes in the characteristics of the device have on the performance of the integrated circuit design.

    摘要翻译： 提供了一种模拟集成电路设计性能的方法。 在提取n个模型参数集以便统计模拟集成电路的性能的情况下，可以通过仅使用直接创建的IV特征曲线提取一个模型参数集来显着减少提取模型参数所花费的时间 测量设备的IV特性作为目标功能，并使用容易测量的主要特征数据（ET数据）提取剩余（n-1）个模型参数集，例如设备的阈值电压或饱和电流为 目标功能。 由于设备的主要特征数据（ET数据）用作目标函数，因此当设备的特性改变时，可以容易地提取模型参数集。 因此，设计人员可以简单地估计器件特性变化对集成电路设计性能的影响（灵敏度）。

    Cathode ray tube with ITO layer and conductive ground strip
    17.
    发明授权
    Cathode ray tube with ITO layer and conductive ground strip 失效
    阴极射线管与ITO层和导电接地条

    公开(公告)号：US06456000B1

    公开(公告)日：2002-09-24

    申请号：US09353767

    申请日：1999-07-15

    申请人： Sang-hoon Lee

    发明人： Sang-hoon Lee

    IPC分类号： H01J3112

    CPC分类号： H01J29/867 ,  H01J2229/8631 ,  H01J2229/882

    摘要： A cathode ray tube (CRT) with enhanced electromagnetic wave shielding effect and antistatic without increased manufacturing cost. The CRT includes a panel with a screen, a funnel connected to the panel, having a cone portion and a neck portion, an electron gun inserted in the neck portion, a deflection yoke installed around the cone portion, an external conductive layer deposited on the external surface of the funnel, a transparent conductive layer deposited on the outer surface of the screen, having a resistance greater than 1×105 &OHgr;/cm2 and equal to or less than 9×105 &OHgr;/cm2, and a conductive ground portion electrically connected to the external conductive layer and attached to the cone portion of the funnel, facing the deflection yoke, and extending toward the neck portion.

    摘要翻译： 具有增强的电磁波屏蔽效果和抗静电性的阴极射线管（CRT），而不增加制造成本。 CRT包括具有屏幕的面板，连接到面板的漏斗，具有锥形部分和颈部部分，插入颈部的电子枪，安装在圆锥部分周围的偏转线圈，沉积在该部分上的外部导电层 漏斗的外表面，沉积在屏幕的外表面上的透明导电层，具有大于1×10 5欧姆/ cm 2且等于或小于9×10 5欧姆/ cm 2的电阻，以及电连接到外导电 并且附接到漏斗的锥形部分，面向偏转线圈，并且朝向颈部部分延伸。

    Audio reproducing method, audio reproducing apparatus therefor, and information storage medium
    18.
    发明授权
    Audio reproducing method, audio reproducing apparatus therefor, and information storage medium 有权
    音频再现方法，音频再现装置和信息存储介质

    公开(公告)号：US09514768B2

    公开(公告)日：2016-12-06

    申请号：US13198914

    申请日：2011-08-05

    申请人： Jong-hoon Jeong ,  Chul-woo Lee ,  Nam-suk Lee ,  Sang-hoon Lee

    发明人： Jong-hoon Jeong ,  Chul-woo Lee ,  Nam-suk Lee ,  Sang-hoon Lee

    IPC分类号： G10L19/00 ,  G10L25/78 ,  G10L19/008 ,  G10L19/24

    CPC分类号： G10L25/78 ,  G10L19/008 ,  G10L19/24

    摘要： An audio reproducing method for quickly and correctly extracting extra data, including: receiving a data stream including the extra data including an end marker disposed immediately before main data and data length information, which is length information of the extra data, disposed immediately before the end marker; checking the presence/absence of the end marker; and if the end marker exists, extracting the extra data by using the data length information.

    摘要翻译： 一种用于快速且正确地提取额外数据的音频再现方法，包括：接收包括紧邻主数据之前设置的结束标记的附加数据的数据流和作为紧邻结束之前设置的额外数据的长度信息的数据长度信息 标记 检查结束标记的存在/不存在; 并且如果存在结束标记，则通过使用数据长度信息来提取额外的数据。