公开(公告)号：US20090039436A1

公开(公告)日：2009-02-12

申请号：US11835320

申请日：2007-08-07

申请人： Bruce B. Doris ,  Eduard Albert Cartier ,  Barry Paul Linder ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Mark Todhunter Robson ,  Michelle L. Steen ,  Ying Zhang

发明人： Bruce B. Doris ,  Eduard Albert Cartier ,  Barry Paul Linder ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Mark Todhunter Robson ,  Michelle L. Steen ,  Ying Zhang

IPC分类号： H01L29/78 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/7833 ,  H01L29/7843

摘要： A CMOS structure is disclosed in which both type of FET devices have gate insulators containing high-k dielectrics, and gates containing metals. The threshold of the two type of devices are adjusted in separate manners. One type of device has its threshold set by exposing the high-k dielectric to oxygen. During the oxygen exposure the other type of device is covered by a stressing dielectric layer, which layer also prevents oxygen penetration to its high-k gate dielectric. The high performance of the CMOS structure is further enhanced by adjusting the effective workfunctions of the gates to near band-edge values both NFET and PFET devices.

摘要翻译： 公开了CMOS结构，其中两种类型的FET器件具有包含高k电介质的栅极绝缘体和包含金属的栅极。 两种类型的设备的阈值以不同的方式进行调整。 一种类型的器件通过将高k电介质暴露于氧气而设置其阈值。 在氧暴露期间，另一种类型的器件被应力介电层覆盖，该层还防止氧气渗透到其高k栅极电介质。 通过将栅极的有效功函数调整到NFET和PFET器件的近带边缘值，进一步增强了CMOS结构的高性能。