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    Method for Fabricating an Image Sensor Device with Reduced Pixel Cross-Talk
    11.
    发明申请
    Method for Fabricating an Image Sensor Device with Reduced Pixel Cross-Talk 审中-公开
    用于制造具有减少像素交叉对话的图像传感器装置的方法

    公开(公告)号：US20080210939A1

    公开(公告)日：2008-09-04

    申请号：US11883853

    申请日：2006-02-22

    申请人： Jean-Baptiste Chevrier ,  Olivier Salasca ,  Emmanuel Turlot

    发明人： Jean-Baptiste Chevrier ,  Olivier Salasca ,  Emmanuel Turlot

    IPC分类号： H01L31/0376 ,  H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645

    摘要： A method of fabricating an image sensor device (5) transferring an intensity of radiation (1) into an electrical current (i-i, a2) depending on said intensity, comprising the following steps in a vacuum deposition device: Depositing onto a dielectric, insulating surface a matrix of electrically conducting pads (7a, 7b) as rear electrical contacts, plasma assisted exposing said surface with pads to a donor delivering gas without adding a silicon containing gas, depositing a layer (15) of intrinsic silicon from a silicon delivering gas depositing a doped layer (17) and arranging an electrically conductive layer (19) transparent for said radiation (1) as a front contact. The method of fabricating an image-sensor-device and the image-sensor-device are avoiding disadvantages of the prior art. This means the image-sensor-device of the invention has a good ohmic contact, a low dark-current, no pixel-cross-talk and a reproducible fabrication-process.

    摘要翻译： 一种制造根据所述强度将辐射强度（1）转移到电流（ii， 2）中的图像传感器装置的方法，包括以下步骤：真空沉积装置 ：作为后电接触将导电焊盘（7a，7b）的矩阵沉积到电介质绝缘表面上，等离子体辅助地将所述表面与焊盘接触，以向施主提供输送气体而不添加含硅气体，沉积层（15 ）沉积掺杂层（17）并且布置对于所述辐射（1）透明的导电层（19）作为前接触的硅输送气体的本征硅。 制造图像传感器装置和图像传感器装置的方法避免了现有技术的缺点。 这意味着本发明的图像传感器装置具有良好的欧姆接触，低暗电流，无像素串扰和可重现的制造工艺。