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    RF plasma reactor having a distribution chamber with at least one grid
    1.
    发明授权
    RF plasma reactor having a distribution chamber with at least one grid 有权
    RF等离子体反应器具有至少一个栅格的分配室

    公开(公告)号：US09045828B2

    公开(公告)日：2015-06-02

    申请号：US11877419

    申请日：2007-10-23

    申请人： Emmanuel Turlot ,  Jean-Baptiste Chevrier ,  Jacques Schmitt ,  Jean Barreiro

    发明人： Emmanuel Turlot ,  Jean-Baptiste Chevrier ,  Jacques Schmitt ,  Jean Barreiro

    IPC分类号： C23C16/507 ,  C23C16/509 ,  H01J1/00 ,  C23F1/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C23C16/5096 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/507 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32697

    摘要： A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.

    摘要翻译： 等离子体反应器具有反应器容器和一对间隔开且相对设置的金属表面形式的电极，在其间限定等离子体放电空间。 金属表面中的至少一个是金属板的表面，其具有多个气体供给开口，该多个气体供给开口延伸穿过金属表面朝向所述放电空间以及从沿着放电空间相对的板延伸的分配室。 分配室具有与板相对且远离的壁，并且包括气体入口装置，其具有沿着壁分布的多个气体入口开口，并连接到到反应器的一个或多个气体供给管线。 一个或多个气体供给管线与连接的入口开口的至少主要部分之间的气体流动阻力系数至少基本相等。

    Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
    5.
    发明授权
    Design of gas injection for the electrode in a capacitively coupled RF plasma reactor 有权
    电容耦合RF等离子体反应器中电极的气体注入设计

    公开(公告)号：US06502530B1

    公开(公告)日：2003-01-07

    申请号：US09559408

    申请日：2000-04-26

    申请人： Emmanuel Turlot ,  Jean-Baptiste Chevrier ,  Jacques Schmitt ,  Jean Barreiro

    发明人： Emmanuel Turlot ,  Jean-Baptiste Chevrier ,  Jacques Schmitt ,  Jean Barreiro

    IPC分类号： C23C16509

    CPC分类号： C23C16/5096 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/507 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32697

    摘要： A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.

    摘要翻译： 等离子体反应器具有反应器容器和一对间隔开且相对设置的金属表面形式的电极，在其间限定等离子体放电空间。 金属表面中的至少一个是金属板的表面，其具有多个气体供给开口，该多个气体供给开口延伸穿过金属表面朝向所述放电空间以及从沿着放电空间相对的板延伸的分配室。 分配室具有与板相对且远离的壁，并且包括气体入口装置，其具有沿着壁分布的多个气体入口开口，并连接到到反应器的一个或多个气体供给管线。 一个或多个气体供给管线与连接的入口开口的至少主要部分之间的气体流动阻力系数至少基本相等。

    Method for Fabricating an Image Sensor Device with Reduced Pixel Cross-Talk
    7.
    发明申请
    Method for Fabricating an Image Sensor Device with Reduced Pixel Cross-Talk 审中-公开
    用于制造具有减少像素交叉对话的图像传感器装置的方法

    公开(公告)号：US20080210939A1

    公开(公告)日：2008-09-04

    申请号：US11883853

    申请日：2006-02-22

    申请人： Jean-Baptiste Chevrier ,  Olivier Salasca ,  Emmanuel Turlot

    发明人： Jean-Baptiste Chevrier ,  Olivier Salasca ,  Emmanuel Turlot

    IPC分类号： H01L31/0376 ,  H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645

    摘要： A method of fabricating an image sensor device (5) transferring an intensity of radiation (1) into an electrical current (i-i, a2) depending on said intensity, comprising the following steps in a vacuum deposition device: Depositing onto a dielectric, insulating surface a matrix of electrically conducting pads (7a, 7b) as rear electrical contacts, plasma assisted exposing said surface with pads to a donor delivering gas without adding a silicon containing gas, depositing a layer (15) of intrinsic silicon from a silicon delivering gas depositing a doped layer (17) and arranging an electrically conductive layer (19) transparent for said radiation (1) as a front contact. The method of fabricating an image-sensor-device and the image-sensor-device are avoiding disadvantages of the prior art. This means the image-sensor-device of the invention has a good ohmic contact, a low dark-current, no pixel-cross-talk and a reproducible fabrication-process.

    摘要翻译： 一种制造根据所述强度将辐射强度（1）转移到电流（ii， 2）中的图像传感器装置的方法，包括以下步骤：真空沉积装置 ：作为后电接触将导电焊盘（7a，7b）的矩阵沉积到电介质绝缘表面上，等离子体辅助地将所述表面与焊盘接触，以向施主提供输送气体而不添加含硅气体，沉积层（15 ）沉积掺杂层（17）并且布置对于所述辐射（1）透明的导电层（19）作为前接触的硅输送气体的本征硅。 制造图像传感器装置和图像传感器装置的方法避免了现有技术的缺点。 这意味着本发明的图像传感器装置具有良好的欧姆接触，低暗电流，无像素串扰和可重现的制造工艺。

    Process for dry etching and vacuum treatment reactor
    8.
    发明授权
    Process for dry etching and vacuum treatment reactor 失效
    干蚀刻和真空处理反应器的工艺

    公开(公告)号：US06127271A

    公开(公告)日：2000-10-03

    申请号：US66978

    申请日：1998-04-28

    申请人： Emmanuel Turlot ,  Jacques Schmitt ,  Philippe Grousset

    发明人： Emmanuel Turlot ,  Jacques Schmitt ,  Philippe Grousset

    IPC分类号： H01L21/302 ,  C23C16/44 ,  C23F4/00 ,  H01L21/00 ,  H01L21/3065 ,  H05H1/46 ,  E03C1/244 ,  B44C1/22 ,  C03C25/06

    CPC分类号： H01L21/67028 ,  C23C16/4405 ,  H01J37/32449 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905 ,  Y10S438/935

    摘要： A process for dry etching a surface within a vacuum treatment reactor includes evacuating the reactor, generating a glow discharge within said reactor, feeding a reactive etching gas into said reactor and reacting said etching gas within said reactor, removing gas with reaction products of said reacting from said reactor and installing an initial flow of said etching gas into said reactor and reducing said flow after a predetermined time span and during said reacting. The vacuum treatment reactor has a reactor with a pumping arrangement for evacuating the reactor. A glow discharge generating arrangement is connected to an electric power supply. A gas tank arrangement is connected to the reactor and has a reactive etching gas such as SF.sub.4.

    摘要翻译： 用于干式蚀刻真空处理反应器中的表面的方法包括抽真空反应器，在所述反应器内产生辉光放电，将反应性蚀刻气体送入所述反应器并使所述腐蚀气体反应在所述反应器内，用所述反应的反应产物除去气体 从所述反应器中并将所述蚀刻气体的初始流动安装到所述反应器中，并且在预定的时间跨度和所述反应期间减少所述流动。 真空处理反应器具有用于抽空反应器的泵送装置的反应器。 辉光放电发生装置连接到电源。 气罐装置连接到反应器并具有反应性蚀刻气体如SF4。

    Field emission device
    9.
    发明授权
    Field emission device 失效
    场发射装置

    公开(公告)号：US5789851A

    公开(公告)日：1998-08-04

    申请号：US573257

    申请日：1995-12-15

    申请人： Emmanuel Turlot ,  Jacques Schmitt ,  Thierry Emeraud

    发明人： Emmanuel Turlot ,  Jacques Schmitt ,  Thierry Emeraud

    IPC分类号： H01J1/304 ,  H01L21/02 ,  H01T1/30

    CPC分类号： H01L28/20 ,  H01J1/304 ,  H01J2201/319

    摘要： A field emission device has a basic substrate whose surface is coated with a conductive layer that forms an electrode. A field emission emitter which is formed as a micro-tip, is electrically connected to the electrode. Between the micro-tip and the electrode, a current limiting resistive silicon film is arranged and the resistivity of the silicon film is adjusted to be in a value ranging from about 10.sup.2 to about 10.sup.5 .OMEGA.cm by an n- or p-dopant. The silicon film contains an alloying element which would be able to form a silicon ceramic if used in a stoichiometric amount but would not be able to dope the silicon.

    摘要翻译： 场发射器件具有其表面涂覆有形成电极的导电层的基底衬底。 形成为微尖端的场致发射体电连接到电极。 在微尖端和电极之间，布置限流电阻硅膜，并且通过n或p-掺杂剂将硅膜的电阻率调节到范围从约102至约105欧姆·厘米。 硅膜含有一种合金元素，如果以化学计量的量使用，则能够形成硅陶瓷，但不能掺杂硅。