公开(公告)号：US20190027696A1

公开(公告)日：2019-01-24

申请号：US16141434

申请日：2018-09-25

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Fumiko TAMAKUNI ,  Tetsuya WATANABE

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  C08L65/00

Abstract: Provided are an organic semiconductor element including an organic semiconductor film that includes a polymer having a repeating unit represented by the following Formula (1), the polymer, and an organic semiconductor composition and an organic semiconductor film including the polymer. In the formula, Y1 represents O, S, or Se. R11 to R14 each independently represent a substituent. a and b each independently represent an integer of 0 to 3, and r and s each independently represent an integer of 0 to 2. A10 represents an aromatic heterocyclic group.

公开(公告)号：US20180175300A1

公开(公告)日：2018-06-21

申请号：US15897689

申请日：2018-02-15

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Hiroo TAKIZAWA ,  Yuta SHIGENOI ,  Fumiko TAMAKUNI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  H01L51/05 ,  C08G61/12

CPC classification number: H01L51/0043 ,  C08G61/12 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/052 ,  H01L51/0529

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are connected to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a block copolymer layer containing a block copolymer or further contains the block copolymer, and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1).

公开(公告)号：US20180006229A1

公开(公告)日：2018-01-04

申请号：US15696194

申请日：2017-09-06

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu KITAMURA ,  Yosuke YAMAMOTO ,  Fumiko TAMAKUNI ,  Yuta SHIGENOI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12 ,  H01L51/05

CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/314 ,  C08G2261/3222 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3245 ,  C08G2261/3246 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/512 ,  C08G2261/514 ,  C08G2261/59 ,  C08G2261/592 ,  C08L65/00 ,  C09D165/00 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/05 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0566 ,  C08L25/02

Abstract: Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater. D-A  (1)