公开(公告)号：US20170199460A1

公开(公告)日：2017-07-13

申请号：US15470042

申请日：2017-03-27

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Kei YAMAMOTO ,  Naoki INOUE ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08F220/28 ,  G03F7/004 ,  G03F7/09 ,  G03F7/16 ,  G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027 ,  G03F7/038 ,  C08F220/18 ,  G03F7/20

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0276 ,  C08F2220/185 ,  C08F2220/1891 ,  C08F2220/1841 ,  C08F220/42 ,  C08F220/20

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a compound having a molecular weight of 870 or less, which generates an acid upon irradiation with active light or radiation.

公开(公告)号：US20170184974A1

公开(公告)日：2017-06-29

申请号：US15460380

申请日：2017-03-16

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Akiyoshi GOTO

IPC: G03F7/32 ,  C08F220/18 ,  C08F220/28 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/327 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US20150017576A1

公开(公告)日：2015-01-15

申请号：US14499708

申请日：2014-09-29

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Hiroo TAKIZAWA ,  Hideaki TSUBAKI

IPC: G03F7/38 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/38 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/28 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2002 ,  G03F7/325

Abstract: There is provided a pattern forming method comprising, in order: (i) a step of forming a film by using an extreme ultraviolet-sensitive resin composition containing (A) a resin having an acid-decomposable group; (ii) a step of exposing the film by using an extreme ultraviolet ray; (iii) a step of heating the film; and (iv) a step of developing the film to form a pattern, wherein in the step (ii), an optical image formed by exposure on the surface of the film is an optical image having a line part with a line width of 20 nm or less as an exposed area or an unexposed area, and, the heating temperature TPEB(° C.) in the step (iii) satisfies the specific formula.

Abstract translation: 提供了一种图案形成方法，其包括以下步骤：（i）通过使用包含（A）具有酸可分解基团的树脂的极紫外线敏感性树脂组合物形成膜的步骤; （ii）通过使用极紫外线曝光胶片的步骤; （iii）加热薄膜的步骤; 和（iv）显影该膜以形成图案的步骤，其中在步骤（ii）中，通过在膜的表面上曝光形成的光学图像是具有线宽为20nm的线部分的光学图像 或更少的曝光区域或未曝光区域，并且步骤（iii）中的加热温度TPEB（℃）满足具体公式。