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    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
    11.
    发明申请
    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS 审中-公开
    固态成像装置和成像装置

    公开(公告)号：US20130214265A1

    公开(公告)日：2013-08-22

    申请号：US13848613

    申请日：2013-03-21

    Applicant: FUJIFILM CORPORATION

    Inventor： Takashi GOTO

    IPC: H01L51/44

    CPC classification number: H01L51/442 ,  H01L27/307 ,  H01L51/424 ,  H01L51/4273 ,  Y02E10/549

    Abstract: A solid-state imaging device includes: plural pixel electrodes two-dimensionally arranged above a substrate; a counter electrode constituted of a transparent electrically conductive oxide having a resistance of not more than 100 kΩ/□, which is formed at an upper layer of the plural pixel electrodes; a light receiving layer including a photoelectric conversion layer containing an organic material, which is formed between the plural pixel electrodes and the counter electrode; and a connecting section for undergoing electrical connection between a voltage supply line for supplying a bias voltage to be impressed to the counter electrode, and in a plan view, a rectangular region in which the plural pixel electrodes are arranged is defined as a pixel region; the pixel region has a size of not more than 5 inches; the connecting section is formed as defined herein; and the counter electrode is formed as defined herein.

    Abstract translation: 固态成像装置包括：二维地布置在基板上方的多个像素电极; 由多个像素电极的上层形成的具有不大于100kΩ/□的电阻的透明导电氧化物构成的对电极; 包括形成在所述多个像素电极和所述对置电极之间的含有有机材料的光电转换层的光接收层; 以及连接部分，用于在用于提供待对置的偏置电压的电源线之间进行电连接，并且在平面图中，将排列有多个像素电极的矩形区域定义为像素区域; 像素区域的尺寸不超过5英寸; 连接部分如本文所定义地形成; 并且对电极如本文所定义地形成。

    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
    13.
    发明申请
    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS 有权
    固态成像装置和成像装置

    公开(公告)号：US20140027618A1

    公开(公告)日：2014-01-30

    申请号：US14038391

    申请日：2013-09-26

    Applicant: FUJIFILM CORPORATION

    Inventor： Takashi GOTO

    IPC: H04N5/378

    CPC classification number: H04N5/378 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641

    Abstract: The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit as defined herein are arranged in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a protection circuit as defined herein; the protection circuit has an impurity region as defined herein; the output transistor has an impurity region as defined herein; and the impurity regions of the protection circuits and the impurity regions of the output transistors are used in common to every adjacent two of the pixels as defined herein.

    Abstract translation: 本发明涉及一种固态成像装置，其中包括形成在半导体衬底上的光电转换部分和如本文所定义的MOS型信号读取电路的像素排列成阵列形式，其中：光电转换部分包括： 像素电极，对电极和光电转换层; 偏置电压施加到如本文所定义的对电极; 信号读取电路包括如本文所定义的电荷存储部分，输出晶体管和保护电路; 保护电路具有如本文所定义的杂质区域; 输出晶体管具有如本文所定义的杂质区域; 并且保护电路的杂质区域和输出晶体管的杂质区域与本文所定义的每个相邻的两个像素共同使用。

    ORGANIC SEMICONDUCTOR COMPOSITION, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, AND ORGANIC THIN FILM TRANSISTOR
    14.
    发明申请
    ORGANIC SEMICONDUCTOR COMPOSITION, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, AND ORGANIC THIN FILM TRANSISTOR 审中-公开

    公开(公告)号：US20190010276A1

    公开(公告)日：2019-01-10

    申请号：US16127808

    申请日：2018-09-11

    Applicant: FUJIFILM Corporation

    Inventor： Takashi GOTO ,  Yosuke YAMAMOTO ,  Tetsuya WATANABE

    IPC: C08G61/12 ,  H01L51/05 ,  H01L51/10 ,  H01L51/00

    Abstract: There is provided an organic semiconductor composition containing the following (a) to (c), a method of manufacturing an organic thin film transistor using this composition, and an organic thin film transistor including (a) and (b) in an organic semiconductor layer: (a) an organic semiconductor polymer having a specific molecular weight and a specific structure; (b) an insulating polymer having a specific molecular weight; and (c) a solvent, in which a weight-average molecular weight Mw1 of the organic semiconductor polymer and a weight-average molecular weight Mw2 of the insulating polymer satisfy a relational expression below, and 0.1≤Mw1/Mw2≤10 a content C1 mass % of the organic semiconductor polymer and a content C2 mass % of the insulating polymer in the organic semiconductor composition satisfy a relational expression below. 0.1≤C1/C2≤10

    SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT, AND IMAGING DEVICE
    17.
    发明申请
    SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT, AND IMAGING DEVICE 审中-公开
    固态成像元件，驱动固态成像元件的方法和成像装置

    公开(公告)号：US20130313410A1

    公开(公告)日：2013-11-28

    申请号：US13946897

    申请日：2013-07-19

    Applicant: FUJIFILM CORPORATION

    Inventor： Takashi GOTO

    IPC: H04N5/378

    CPC classification number: H04N5/378 ,  H04N5/3698 ,  H04N5/374

    Abstract: A solid-state imaging element 100 includes a control unit 104 that performs, in each frame, driving to inject electric charge into a storage unit 11 from a power source supplying reset voltage by controlling the reset voltage supplied to a reset Tr 31 and to discharge some of the electric charge that has been injected into the storage unit 11 to the power source by controlling the reset voltage.

    Abstract translation: 固态成像元件100包括：控制单元104，其通过控制提供给复位Tr 31的复位电压，并且提供复位电压31的复位电压，在各帧中执行驱动以从供电复位电压的电源向存储单元11注入电荷， 通过控制复位电压已经注入到存储单元11中的一些电荷到电源。

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