公开(公告)号：US20160071538A1

公开(公告)日：2016-03-10

申请号：US14944345

申请日：2015-11-18

Applicant: FUJIFILM Corporation

Inventor： Hidehiro MOCHIZUKI ,  Tetsuya WATANABE

IPC: G11B7/246 ,  G11B7/245 ,  G11B7/24038 ,  C09B69/10

CPC classification number: G11B7/246 ,  C09B5/347 ,  C09B57/00 ,  C09B69/10 ,  C09B69/105 ,  C09B69/109 ,  G11B7/24038 ,  G11B7/245

Abstract: A recording material includes a dye-bonded polymer compound which contains a polymer compound to which a one-photon absorption dye is bonded, and a glass transition temperature of the recording material is higher than 200° C. An optical information recording medium includes a recording layer and an intermediate layer adjacent to the recording layer, and the recording layer contains the above-described recording material.

Abstract translation: 记录材料包括含有键合有单光子吸收染料的高分子化合物和记录材料的玻璃化转变温度高于200℃的染料键合聚合物化合物。光学信息记录介质包括记录 层和与记录层相邻的中间层，并且记录层包含上述记录材料。

公开(公告)号：US20240377924A1

公开(公告)日：2024-11-14

申请号：US18689079

申请日：2022-08-12

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuya WATANABE

IPC: G06F3/0482

Abstract: Provided is an information processing device, including: a processor, wherein the processor is configured to: display a plurality of first indices of a database stored in a storage unit, in a first direction of a display area of a display unit; display, upon detecting a user's selection operation for a first index, a plurality of second indices, corresponding to the first index, in a straight line in a second direction intersecting or parallel to the first index; and determine that a second index is selected in a case in which it is detected that a second index display area displaying the second index has been selected, and also in a case in which it is detected that a selection area set other than the second index display area has been selected.

公开(公告)号：US20240004535A1

公开(公告)日：2024-01-04

申请号：US18252537

申请日：2021-11-30

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuya WATANABE ,  Yui HIROYA ,  Masanori SATAKE

IPC: G06F3/04845 ,  G06F3/16 ,  G06F3/0486

CPC classification number: G06F3/04845 ,  G06F3/0488 ,  G06F3/0486 ,  G06F3/16

Abstract: The image forming device is provided with a CPU. When a user perform the movement operation on the operation unit displayed on a display unit, the CPU cause an operation unit to move so as to follow a movement operation. The CPU execute a predetermined operation after the movement of the operation unit from an initial position to an execution position on the display unit is completed. When the movement operation is released on the way from the initial position to the execution position, the CPU cause the operation unit to be moved toward the initial position or the execution position other than by a user operation according to a position at which the movement operation has been released. The CPU stop the movement of the operation unit in a case in which the user selects a predetermined position of the display unit while the operation unit is moved other than by the user operation.

公开(公告)号：US20210351363A1

公开(公告)日：2021-11-11

申请号：US17382961

申请日：2021-07-22

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Eiji FUKUZAKI ,  Tetsuya WATANABE ,  Yoshihisa USAMI ,  Yukio TANI ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C07D471/22 ,  C07D471/06 ,  H01L29/786 ,  C07D491/22 ,  H01L51/10

Abstract: Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

公开(公告)号：US20200028096A1

公开(公告)日：2020-01-23

申请号：US16588534

申请日：2019-09-30

Applicant: FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

Inventor： Kenji SHIROKANE ,  Eiji FUKUZAKI ,  Yukio TANI ,  Fumiko TAMAKUNI ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00

Abstract: An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1) and/or a compound of Formula (2) or contains a polymer having a structure of any one of Formulae (9) and (10): in which X1 represents a nitrogen atom or CRa, rings A to D each represent a specific aromatic ring or an aromatic heterocyclic ring; Y1 represents an oxygen atom, a sulfur atom, CRb2, or NRc; Ra to Rc each represent hydrogen atoms or substituents; R1 and R2 each represent a to specific substituent; n represents 1 or 2; and * represents a bonding site.

公开(公告)号：US20190074452A1

公开(公告)日：2019-03-07

申请号：US16180118

申请日：2018-11-05

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C09D5/24 ,  C07D495/14 ,  C09B57/00 ,  H01L51/05

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US20190027696A1

公开(公告)日：2019-01-24

申请号：US16141434

申请日：2018-09-25

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Fumiko TAMAKUNI ,  Tetsuya WATANABE

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  C08L65/00

Abstract: Provided are an organic semiconductor element including an organic semiconductor film that includes a polymer having a repeating unit represented by the following Formula (1), the polymer, and an organic semiconductor composition and an organic semiconductor film including the polymer. In the formula, Y1 represents O, S, or Se. R11 to R14 each independently represent a substituent. a and b each independently represent an integer of 0 to 3, and r and s each independently represent an integer of 0 to 2. A10 represents an aromatic heterocyclic group.

公开(公告)号：US20190010276A1

公开(公告)日：2019-01-10

申请号：US16127808

申请日：2018-09-11

Applicant: FUJIFILM Corporation

Inventor： Takashi GOTO ,  Yosuke YAMAMOTO ,  Tetsuya WATANABE

IPC: C08G61/12 ,  H01L51/05 ,  H01L51/10 ,  H01L51/00

Abstract: There is provided an organic semiconductor composition containing the following (a) to (c), a method of manufacturing an organic thin film transistor using this composition, and an organic thin film transistor including (a) and (b) in an organic semiconductor layer: (a) an organic semiconductor polymer having a specific molecular weight and a specific structure; (b) an insulating polymer having a specific molecular weight; and (c) a solvent, in which a weight-average molecular weight Mw1 of the organic semiconductor polymer and a weight-average molecular weight Mw2 of the insulating polymer satisfy a relational expression below, and 0.1≤Mw1/Mw2≤10 a content C1 mass % of the organic semiconductor polymer and a content C2 mass % of the insulating polymer in the organic semiconductor composition satisfy a relational expression below. 0.1≤C1/C2≤10

公开(公告)号：US20180175300A1

公开(公告)日：2018-06-21

申请号：US15897689

申请日：2018-02-15

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Hiroo TAKIZAWA ,  Yuta SHIGENOI ,  Fumiko TAMAKUNI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  H01L51/05 ,  C08G61/12

CPC classification number: H01L51/0043 ,  C08G61/12 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/052 ,  H01L51/0529

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are connected to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a block copolymer layer containing a block copolymer or further contains the block copolymer, and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1).

公开(公告)号：US20180006229A1

公开(公告)日：2018-01-04

申请号：US15696194

申请日：2017-09-06

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu KITAMURA ,  Yosuke YAMAMOTO ,  Fumiko TAMAKUNI ,  Yuta SHIGENOI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12 ,  H01L51/05

CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/314 ,  C08G2261/3222 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3245 ,  C08G2261/3246 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/512 ,  C08G2261/514 ,  C08G2261/59 ,  C08G2261/592 ,  C08L65/00 ,  C09D165/00 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/05 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0566 ,  C08L25/02

Abstract: Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater. D-A  (1)