Abstract:
The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film using a composition for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the composition for forming an upper layer film includes a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, and an acid, in which the resin includes a repeating unit represented by General Formula (II). The method for manufacturing an electronic device includes the pattern forming method. A laminate includes the film and the upper layer film.
Abstract:
Provided are a rinsing liquid which is used for rinsing a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition and includes a hydrocarbon-based solvent having a branched alkyl group. The hydrocarbon-based solvent having a branched alkyl group contains at least one of isodecane or isododecane.
Abstract:
A method for developing a non chemically amplified resist employs a developing fluid having a carboxylic acid compound, which is a carboxylic acid ester having branched chain alkyl groups and a total carbon number of 8 or greater, as a main component. It is particularly preferable for the carboxylic acid compound to be at least one of isobutyl butyrate, butyl isobutyrate, isobutyl isobutyrate, isoamyl isobutyrate, and 2-methylbutyrate 2-methylbutyl. It is also preferable for the non chemically amplified resist to be a resist having a copolymer of an α-chloroacrylate ester compound and an α-methylstyrene compound as a main component.