PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE

    公开(公告)号:US20180180996A1

    公开(公告)日:2018-06-28

    申请号:US15904439

    申请日:2018-02-26

    Abstract: The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film using a composition for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the composition for forming an upper layer film includes a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, and an acid, in which the resin includes a repeating unit represented by General Formula (II). The method for manufacturing an electronic device includes the pattern forming method. A laminate includes the film and the upper layer film.

    Method for developing resist, method for forming a resist pattern, method for producing a mold, and developing fluid utilized in these methods
    13.
    发明授权
    Method for developing resist, method for forming a resist pattern, method for producing a mold, and developing fluid utilized in these methods 有权
    用于形成抗蚀剂的方法,用于形成抗蚀剂图案的方法,用于制造模具的方法和在这些方法中使用的显影液

    公开(公告)号:US09417530B2

    公开(公告)日:2016-08-16

    申请号:US14497616

    申请日:2014-09-26

    Abstract: A method for developing a non chemically amplified resist employs a developing fluid having a carboxylic acid compound, which is a carboxylic acid ester having branched chain alkyl groups and a total carbon number of 8 or greater, as a main component. It is particularly preferable for the carboxylic acid compound to be at least one of isobutyl butyrate, butyl isobutyrate, isobutyl isobutyrate, isoamyl isobutyrate, and 2-methylbutyrate 2-methylbutyl. It is also preferable for the non chemically amplified resist to be a resist having a copolymer of an α-chloroacrylate ester compound and an α-methylstyrene compound as a main component.

    Abstract translation: 用于开发非化学放大抗蚀剂的方法采用具有羧酸化合物的显影液,其是具有支链烷基和总碳数为8以上的羧酸酯作为主要成分。 特别优选羧酸化合物为丁酸异丁酯,异丁酸丁酯,异丁酸异丁酯,异丁酸异戊酯和2-甲基丁酸2-甲基丁酯中的至少一种。 非化学放大型抗蚀剂也优选为具有α-氯代丙烯酸酯化合物和α-甲基苯乙烯化合物的共聚物作为主要成分的抗蚀剂。

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