公开(公告)号：US20110128002A1

公开(公告)日：2011-06-02

申请号：US13055246

申请日：2009-07-29

申请人： Hideaki Fujiwara ,  Hirohiko Imai ,  Satoshi Iguchi ,  Hironobu Yoshimura ,  Atsuomi Kimura

发明人： Hideaki Fujiwara ,  Hirohiko Imai ,  Satoshi Iguchi ,  Hironobu Yoshimura ,  Atsuomi Kimura

IPC分类号： G01R33/28 ,  F25J3/00 ,  F25B21/00 ,  F25J1/00

CPC分类号： G01R33/282 ,  B01D7/02

摘要： The present invention relates to a polarized xenon gas manufacturing supply device that is provided with a polarization cell 6 that produces a polarized xenon gas by polarizing a mixture of xenon gas and a diluent gas that consists primarily of a high-boiling-point gas that has a boiling point higher than that of the xenon gas, and a condenser (9) that cools the mixed gas discharged from the polarization cell (6) and condenses and separates the high-boiling-point gas by using the difference in boiling points between the xenon gas and the high-boiling-point gas, wherein the supply device is constructed so as to re-vaporize the condensed liquid of the high-boiling-point gas produced by the condenser (9) and introduce it to the polarization cell (6). This polarized xenon gas manufacturing supply device makes it possible to continuously manufacture and supply highly polarized and highly concentrated xenon gas.

摘要翻译： 本发明涉及一种偏振氙气制造供应装置，其具有通过偏振氙气和稀释气体的混合物产生偏振氙气的偏振电池6，该稀释气体主要由高沸点气体组成，该高沸点气体具有 沸点高于氙气的沸点;以及冷凝器（9），冷凝从偏振电池（6）排出的混合气体，并通过使用高沸点气体的不同点冷凝并分离高沸点气体 氙气和高沸点气体，其中供给装置被构造成使由冷凝器（9）产生的高沸点气体的冷凝液体再气化并将其引入偏振电池（6） ）。 该极化氙气制造供给装置能够连续制造和供应高度极化和高浓度的氙气。

公开(公告)号：US20070235812A1

公开(公告)日：2007-10-11

申请号：US11729972

申请日：2007-03-30

申请人： Hideaki Fujiwara ,  Kazunori Fujita ,  Yoshikazu Yamaoka ,  Hideki Mizuhara ,  Yasunori Inoue

发明人： Hideaki Fujiwara ,  Kazunori Fujita ,  Yoshikazu Yamaoka ,  Hideki Mizuhara ,  Yasunori Inoue

IPC分类号： H01L23/62

CPC分类号： H01L29/792 ,  B82Y10/00 ,  G11C16/0408 ,  G11C2216/06 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/40117 ,  H01L29/42348 ,  H01L29/6659 ,  H01L29/66833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device operating at low voltage is provided where a threshold voltage is controlled with ease. A semiconductor substrate is element-isolated by element isolation regions. A source region and a source region are spaced from each other on the semiconductor substrate. A gate electrode is formed between the source region and the drain by way of a gate insulator. A plurality of insulating particles are embedded in the gate electrode in a scattered manner at an interface between the gate insulator and the gate electrode, where the particles are in contact with the gate insulator.

摘要翻译： 提供以低电压工作的半导体器件，其中容易地控制阈值电压。 半导体衬底通过元件隔离区元件隔离。 源极区域和源极区域在半导体衬底上彼此间隔开。 通过栅极绝缘体在源区和漏极之间形成栅电极。 多个绝缘颗粒以分散的方式嵌入在栅极绝缘体和栅电极之间的界面处，其中颗粒与栅极绝缘体接触。

公开(公告)号：US06897515B2

公开(公告)日：2005-05-24

申请号：US09899267

申请日：2001-07-06

申请人： Hideaki Fujiwara

发明人： Hideaki Fujiwara

IPC分类号： G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  G11C16/0425 ,  G11C16/0433 ,  H01L29/42336 ,  H01L29/7883

摘要： A semiconductor memory capable of attaining a low voltage, a high-speed operation, low power consumption and a high degree of integration is obtained. This semiconductor memory comprises a floating gate electrode, a first source/drain region having a diode structure employed for controlling the potential of the floating gate electrode and a second source/drain region formed to hold a channel region between the same and the first source/drain region. Thus, when a channel of a transistor is turned on in reading, a large amount of current flows from the first source/drain region having a diode structure to a substrate, whereby high-speed reading can be implemented. Further, a negative voltage is readily applied to the first source/drain region having a diode structure, whereby a low voltage and low power consumption are attained and the scale of a step-up circuit is reduced, and hence a high degree of integration can be attained.

摘要翻译： 可以获得能够实现低电压，高速运转，低功耗，高集成度的半导体存储器。 该半导体存储器包括浮置栅极电极，具有用于控制浮置栅电极的电位的二极管结构的第一源极/漏极区域和形成为保持其与第一源极/漏极区域之间的沟道区域的第二源极/漏极区域， 漏区。 因此，当晶体管的沟道在读取时导通时，大量的电流从具有二极管结构的第一源极/漏极区流动到衬底，从而可以实现高速读取。 此外，负电压容易地施加到具有二极管结构的第一源/漏区，由此获得低电压和低功耗，并且升压电路的规模减小，因此高集成度 实现。

公开(公告)号：US06642571B2

公开(公告)日：2003-11-04

申请号：US10271556

申请日：2002-10-17

申请人： Hideaki Fujiwara

发明人： Hideaki Fujiwara

IPC分类号： H01L29788

CPC分类号： H01L29/66825 ,  G11C16/0416 ,  G11C16/0425 ,  H01L21/28273 ,  H01L29/42324

摘要： A semiconductor memory capable of increasing the coupling ratio between a diffusion layer and a floating gate by reducing the coupling ratio between the floating gate and a control gate thereby easily performing high-speed writing with a low diffusion layer voltage is provided. This semiconductor memory comprises the floating gate, a first diffusion layer capacitively coupled with the floating gate for controlling the potential of the floating gate and the control gate arranged oppositely to the floating gate. In an erase operation, the control gate feeds a tunnel current to the floating gate in a direction substantially parallel to the main surface of a semiconductor substrate. Thus, the tunnel current can be fed by extracting carriers from the floating gate also when the control gate has no region overlapping with the upper portion of the floating gate.

摘要翻译： 提供一种半导体存储器，其能够通过降低浮动栅极和控制栅极之间的耦合比来增加扩散层和浮置栅极之间的耦合比，从而容易地以低扩散层电压进行高速写入。 该半导体存储器包括浮动栅极，与浮动栅极电容耦合的第一扩散层，用于控制与浮置栅极相对布置的浮置栅极和控制栅极的电位。 在擦除操作中，控制栅极基本上平行于半导体衬底的主表面的方向将浮动栅极提供隧道电流。 因此，当控制栅极没有与浮动栅极的上部重叠的区域时，也可以从浮置栅极提取载流子来馈送隧道电流。

公开(公告)号：US06610581B1

公开(公告)日：2003-08-26

申请号：US09584850

申请日：2000-06-01

申请人： Yasuhiro Takeda ,  Hideaki Fujiwara

发明人： Yasuhiro Takeda ,  Hideaki Fujiwara

IPC分类号： H01L218238

CPC分类号： H01L21/76202 ,  H01L21/76205

摘要： There is disclosed a method of forming an isolation film in a semiconductor device, the method including the steps of: forming a silicon oxide film and a silicon nitride film in that order on a silicon substrate, using a resist pattern as a mask, etching the silicon nitride film and silicon oxide film, and forming trenches in the substrate. In the substrate, the respective trenches form a region in which isolation films are to be formed, and the region between the trenches forms an active region. In this case, each dimension is set so that a ratio W/t of width W to thickness t of the patterned silicon nitride film is 3.8 or more. Subsequently, by removing the resist pattern, subsequently using the silicon nitride film as the mask, and performing thermal oxidation at a temperature of 1050° C. to 1150° C. in an oxygen atmosphere, an isolation film is formed in the trench.

摘要翻译： 公开了在半导体器件中形成隔离膜的方法，该方法包括以下步骤：在硅衬底上依次形成氧化硅膜和氮化硅膜，使用抗蚀剂图案作为掩模，蚀刻 氮化硅膜和氧化硅膜，并在衬底中形成沟槽。 在衬底中，相应的沟槽形成其中将形成隔离膜的区域，并且沟槽之间的区域形成有源区。 在这种情况下，每个尺寸被设定为使得图案化氮化硅膜的宽度W与厚度t的比W / t为3.8以上。 随后，通过去除抗蚀剂图案，随后使用氮化硅膜作为掩模，并且在氧气氛中在1050℃至1150℃的温度下进行热氧化，在沟槽中形成隔离膜。

公开(公告)号：US5234488A

公开(公告)日：1993-08-10

申请号：US563802

申请日：1990-08-06

申请人： Kenji Ichikawa ,  Osamu Nomura ,  Akihiro Morita ,  Yoichiro Kawabe ,  Hideaki Fujiwara ,  Koyo Yanagawa

发明人： Kenji Ichikawa ,  Osamu Nomura ,  Akihiro Morita ,  Yoichiro Kawabe ,  Hideaki Fujiwara ,  Koyo Yanagawa

IPC分类号： B22D11/111

CPC分类号： B22D11/111

摘要： A mold additive suitable for use in a mold for continuous casting of steel which comprises, as its base material, at least 50% by weight of synthetic calcium silicate which contains CaO and SiO.sub.2 in a total amount not less than 70% by weight, and whose CaO/SiO.sub.2 ratio is not lower than 1.20. A mold additive of low bulk density and superior in heat insulation can be obtained and its CaO/SiO.sub.2 ratio can be widely adjusted.

摘要翻译： 一种适合用于连续铸造钢的模具的模具添加剂，其包含至少50重量％的合成硅酸钙作为其基材，所述合成硅酸钙含有不少于70重量％的CaO和SiO 2，以及 其CaO / SiO2比不低于1.20。 可以获得低堆积密度和绝热性优良的模具添加剂，可以广泛调整其CaO / SiO2比例。

公开(公告)号：US08624594B2

公开(公告)日：2014-01-07

申请号：US13055246

申请日：2009-07-29

申请人： Hideaki Fujiwara ,  Hirohiko Imai ,  Satoshi Iguchi ,  Hironobu Yoshimura ,  Atsuomi Kimura

发明人： Hideaki Fujiwara ,  Hirohiko Imai ,  Satoshi Iguchi ,  Hironobu Yoshimura ,  Atsuomi Kimura

IPC分类号： G01V3/00

CPC分类号： G01R33/282 ,  B01D7/02

摘要： The present invention relates to a polarized xenon gas manufacturing supply device that is provided with a polarization cell 6 that produces a polarized xenon gas by polarizing a mixture of xenon gas and a diluent gas that consists primarily of a high-boiling-point gas that has a boiling point higher than that of the xenon gas, and a condenser (9) that cools the mixed gas discharged from the polarization cell (6) and condenses and separates the high-boiling-point gas by using the difference in boiling points between the xenon gas and the high-boiling-point gas, wherein the supply device is constructed so as to re-vaporize the condensed liquid of the high-boiling-point gas produced by the condenser (9) and introduce it to the polarization cell (6). This polarized xenon gas manufacturing supply device makes it possible to continuously manufacture and supply highly polarized and highly concentrated xenon gas.

摘要翻译： 本发明涉及一种偏振氙气制造供应装置，其具有通过偏振氙气和稀释气体的混合物产生偏振氙气的偏振电池6，该稀释气体主要由高沸点气体组成，该高沸点气体具有 沸点高于氙气的沸点;以及冷凝器（9），冷凝从偏振电池（6）排出的混合气体，并通过使用高沸点气体的不同点冷凝并分离高沸点气体 氙气和高沸点气体，其中供给装置被构造成使由冷凝器（9）产生的高沸点气体的冷凝液体再气化并将其引入偏振电池（6） ）。 该极化氙气制造供给装置能够连续制造和供应高度极化和高浓度的氙气。

公开(公告)号：US07915695B2

公开(公告)日：2011-03-29

申请号：US11443152

申请日：2006-05-31

申请人： Hideaki Fujiwara

发明人： Hideaki Fujiwara

IPC分类号： H01L29/78

CPC分类号： H01L21/823842

摘要： A semiconductor device capable of reducing deterioration of electron mobility while suppressing depletion of gate electrodes is provided. This semiconductor device includes a metal-containing layer so formed that at least either a first gate electrode or a second gate electrode partially covers a corresponding first or second gate insulating film and a semiconductor layer formed on the metal-containing layer to come into contact with a portion of the corresponding first or second gate insulating film not covered with the metal-containing layer. The first and second gate electrodes contain metals different from each other.

摘要翻译： 提供能够减少电子迁移率劣化并抑制栅电极耗尽的半导体器件。 该半导体装置包括如此形成的含金属层，使得第一栅极电极或第二栅电极中的至少一个部分地覆盖相应的第一或第二栅极绝缘膜和形成在含金属层上的半导体层以与 相应的第一或第二栅绝缘膜的一部分未被含金属层覆盖。 第一和第二栅电极包含彼此不同的金属。

公开(公告)号：US20090232921A1

公开(公告)日：2009-09-17

申请号：US12438046

申请日：2007-08-31

申请人： Hideharu Iwasaki ,  Takayuki Ikeda ,  Hideaki Fujiwara ,  Yoshihisa Tsuji

发明人： Hideharu Iwasaki ,  Takayuki Ikeda ,  Hideaki Fujiwara ,  Yoshihisa Tsuji

IPC分类号： B01J3/08 ,  B28B3/00

CPC分类号： G01N3/04 ,  B30B1/001 ,  G01N3/313 ,  G01N2203/0447

摘要： A target capsule includes (A) a pedestal having a central projection, (B) a pedestal aid attached to the central projection so as to define a sample-loading assembly, and (C) an impact-receiving member, wherein the components (A), (B), and (C) are detachable from each other. The impact target capsule can be readily loaded with a sample, allows the sample to be easily retrieved after application of impact pressure, and can be used repeatedly, and thereby the capsule can be preferably used as an impact compression apparatus in combination with a single-stage powder gun or a single-stage gas gun.

摘要翻译： 目标胶囊包括（A）具有中心突起的基座，（B）附接到中心突起的基座辅助件，以便限定样品加载组件，和（C）冲击接收部件，其中部件（A ），（B）和（C）可以彼此分离。 冲击目标胶囊可以容易地装载样品，允许在施加冲击压力之后容易地取出样品，并且可以重复使用，从而胶囊可以优选地用作冲击压缩装置， 舞台粉枪或单级气枪。

公开(公告)号：US20080217603A1

公开(公告)日：2008-09-11

申请号：US12010764

申请日：2008-01-29

申请人： Youichi Takeda ,  Hideaki Fujiwara ,  Shinya Naito

发明人： Youichi Takeda ,  Hideaki Fujiwara ,  Shinya Naito

IPC分类号： H01L29/08

CPC分类号： H01L29/7606 ,  H01L27/0688

摘要： A hot electron transistor includes a collector layer, a base layer, an emitter layer, a collector barrier layer formed between the collector layer and the base layer, and an emitter barrier layer formed between the base layer and the emitter layer. An energy barrier between the emitter barrier layer and the emitter layer does not substantially exist and the height of an energy barrier of the collector barrier layer is lower than the height of an energy barrier of the emitter barrier layer.

摘要翻译： 热电子晶体管包括集电极层，基极层，发射极层，形成在集电极层和基极层之间的集电极势垒层，以及形成在基极层和发射极层之间的发射极阻挡层。 发射极阻挡层和发射极层之间的能量势垒基本上不存在，并且集电极阻挡层的能量势垒的高度低于发射极阻挡层的能量势垒的高度。