公开(公告)号：US20120114845A1

公开(公告)日：2012-05-10

申请号：US13266032

申请日：2010-04-21

申请人： Fabinia H. Romero ,  Yoshiko Nishijima ,  Haruo Hamaki ,  Shinji Sato ,  Taro Niki ,  Yasunori Motegi

发明人： Fabinia H. Romero ,  Yoshiko Nishijima ,  Haruo Hamaki ,  Shinji Sato ,  Taro Niki ,  Yasunori Motegi

IPC分类号： B05D5/00 ,  H01B1/22

CPC分类号： C09D5/24 ,  C09D5/103 ,  H01B1/22

摘要： Provided is a highly versatile conductive metallic coating material which is free from the limitation related to a facility without handling complication, and which can maintain its anticorrosive action for a long period. Specifically provided is a conductive metallic coating material which has an organic resin component and a metal component containing aluminum and magnesium and which exhibits a sacrificial anticorrosive reaction on iron. A content ratio of the metal component and the organic resin component is desirably 98:2 to 80:20 in terms of weight ratio. The conductive metallic coating material according to the present invention is usable for preventing corrosion of a building structure or a civil engineering structure and for repairing a corrosion proof treated surface of an existing building structure or a civil engineering structure.

摘要翻译： 提供了一种高度通用的导电金属涂层材料，其不受处理并不适用于设备的限制，并且可长期保持其防腐蚀作用。 具体地提供了一种导电金属涂层材料，其具有有机树脂组分和含有铝和镁的金属组分，并且在铁上表现出牺牲性防腐蚀反应。 金属成分和有机树脂成分的含有比优选为98:2〜80:20（重量比）。 根据本发明的导电金属涂层材料可用于防止建筑结构或土木工程结构的腐蚀，以及用于修复现有建筑结构或土木工程结构的防腐处理表面。

公开(公告)号：US20110151636A1

公开(公告)日：2011-06-23

申请号：US13024663

申请日：2011-02-10

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The source implantation can include n-type and p-type materials implanted under different angles, and the drain implantation can include n-type and p-type materials implanted under different angles. Or, the source implantation can include multiple n-type implantations under different angles, and the drain implantation can include multiple n-type implantations under different angles.

摘要翻译： 一种用于创建NAND闪存的方法。 以与NAND串的堆叠栅极结构之间的区域的第一注入角度执行源注入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 源植入可以包括以不同角度注入的n型和p型材料，并且漏极注入可以包括以不同角度注入的n型和p型材料。 或者，源植入可以包括在不同角度下的多个n型注入，并且漏极注入可以包括在不同角度下的多个n型注入。

公开(公告)号：US07876618B2

公开(公告)日：2011-01-25

申请号：US12409020

申请日：2009-03-23

申请人： Sanghyun Lee ,  Masaaki Higashitani ,  Shinji Sato ,  Chih-Ming Wang

发明人： Sanghyun Lee ,  Masaaki Higashitani ,  Shinji Sato ,  Chih-Ming Wang

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08

摘要： A memory device with reduced leakage current during programming and sense operations, and a method for operating such a memory device. In a non-volatile memory device, current leakage at the drain select gates of NAND strings can occur in unselected blocks when a selected block undergoes a program or read operation, and the bit lines are shared by the blocks. In one approach, in which a common transfer gate driver is provided for both blocks, the drain select gates are pre-charged at an optimum level, which minimizes leakage, and subsequently floated while a program or read voltage is applied to a selected word line in the selected block. In another approach, a separate transfer gate driver is provided for the unselected block so that the optimal select gate voltage can be driven in the unselected block, even while the program or read voltage is applied in the selected block.

摘要翻译： 在编程和感测操作期间具有减小的漏电流的存储器件，以及用于操作这种存储器件的方法。 在非易失性存储器件中，当所选择的块经历程序或读取操作，并且位线由块共享时，在NAND串的漏极选择栅极处的电流泄漏可能发生在未选择的块中。 在其中为两个块提供公共传输栅极驱动器的一种方法中，漏极选择栅极以最佳电平进行预充电，这使泄漏最小化，随后浮动，同时将程序或读取电压施加到所选择的字线 在所选的块中。 在另一种方法中，为未选择的块提供单独的传输栅极驱动器，使得即使在所选择的块中施加编程或读取电压，也可以在未选择的块中驱动最佳选择栅极电压。

公开(公告)号：US20100297823A1

公开(公告)日：2010-11-25

申请号：US12835468

申请日：2010-07-13

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.

摘要翻译： 在衬底上产生用于NAND串的堆叠栅极结构。 以与堆叠的栅极结构之间的区域的第一注入角度进行源植入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 漏极注入在堆叠栅极结构的漏极侧的衬底中产生第一导电类型的较低掺杂区域。 源极注入在层叠栅极结构的源极侧的衬底中产生第一导电类型的较高掺杂区域。

公开(公告)号：US20060133120A1

公开(公告)日：2006-06-22

申请号：US11302775

申请日：2005-12-13

申请人： Shinji Sato ,  Fumio Nagamatsu ,  Takahiro Kanata ,  Yuji Fuse ,  Shoichi Kawauchi ,  Osamu Iyama

发明人： Shinji Sato ,  Fumio Nagamatsu ,  Takahiro Kanata ,  Yuji Fuse ,  Shoichi Kawauchi ,  Osamu Iyama

IPC分类号： H02M5/45 ,  H02M5/458

CPC分类号： H02M5/4585

摘要： A non-outage power supply system comprises three-phase ac input terminals and three-phase ac output terminals, between which there are sequentially connected a three-phase ac-to-dc converter circuit, a capacitor, and a three-phase dc-to-ac converter circuit. A bypass switch is connected between a preselected one of the three-phase ac input terminals and a preselected one of the three-phase ac output terminals. A bypass switch control circuit holds the bypass switch closed when the three-phase ac inputs are in phase with the three-phase ac outputs, and open when they are not. Part or all of the effective current demanded by the load bypasses the three-phase dc-to-ac converter circuit when the bypass switch is closed, with a consequent reduction of power loss.

摘要翻译： 一个非中断电源系统包括三相交流输入端子和三相交流输出端子，其间依次连接三相交流 - 直流转换器电路，电容器和三相直流 - 交流转换电路。 旁路开关连接在三相交流输入端子中的预选的一个和三相交流输出端子中的预选的一个之间。 旁路开关控制电路在三相交流输入与三相交流输出同相时将旁路开关保持闭合状态，当不连接时，旁路开关闭合。 当旁路开关闭合时，负载所需的部分或全部有效电流绕过三相dc-to-ac转换器电路，从而降低功率损耗。

公开(公告)号：US20060073754A1

公开(公告)日：2006-04-06

申请号：US11283765

申请日：2005-11-22

申请人： Takeo Kawaguchi ,  Shinji Sato ,  Yuichi Fukushima

发明人： Takeo Kawaguchi ,  Shinji Sato ,  Yuichi Fukushima

IPC分类号： B32B27/12 ,  C09K21/00 ,  B32B27/04

CPC分类号： C09J7/205 ,  C08K3/016 ,  C08K3/22 ,  C08K5/544 ,  C09J7/21 ,  C09J2205/106 ,  C09J2407/00 ,  C09J2407/006 ,  Y10T442/2754

摘要： For providing a flame retardant pressure-sensitive adhesive tape with a substrate, which is odorless, does not corrode or discolor the adherend and at the incineration, does not release a halogen gas or a sulfurous acid gas having an adverse effect on the environment, an odorless and non-halogen flame retardant pressure-sensitive adhesive tape with a cloth substrate is disclosed, comprising a cloth substrate having coated thereon, preferably together with a vulcanized natural rubber-base flame retardant composition layer, a vulcanized natural rubber-base flame retardant pressure-sensitive adhesive layer, both being obtained by a takifier resin, a flame retardant (a metal hydroxide and an inorganic flame retardant aid) and a natural rubber-base elastomer vulcanized with aminoalkylalkoxysilane. The substrate is preferably a flame retardation-treated cloth substrate obtained by impregnating an inflammable cloth substrate with a natural rubber-base flame retardant composition.

摘要翻译： 为了提供具有无臭味的基材的阻燃性粘合带，不会使被粘物腐蚀或变色，并且在焚烧时不会释放对环境有不利影响的卤素气体或亚硫酸气体， 公开了具有布基材的无臭和无卤阻燃性压敏粘合带，其包含涂布在其上的布基材，优选与硫化天然橡胶基阻燃剂组合物层，硫化天然橡胶基阻燃剂压力 两者均通过沥青树脂，阻燃剂（金属氢氧化物和无机阻燃助剂）和用氨基烷基烷氧基硅烷硫化的天然橡胶基弹性体得到。 基材优选通过用天然橡胶基阻燃剂组合物浸渍易燃布基材而获得的阻燃处理布基材。

公开(公告)号：US06189860B1

公开(公告)日：2001-02-20

申请号：US09194740

申请日：1998-12-02

申请人： Shinji Sato ,  Takahiro Kato

发明人： Shinji Sato ,  Takahiro Kato

IPC分类号： F16K122

CPC分类号： F16K1/2263

摘要： A plastic butterfly valve includes a hollow cylindrical body in which an annular seat is fixed on the inner peripheral surface of a flow passage of the body by a seat pressure foot, and a valve disk rotatably and eccentrically supported at the stem of the valve disk within the body to abut the periphery of the valve disk on the seat. The seat pressure foot is detachably fitted in one side portion of the body by an insertion/rotation mechanism. The insertion/rotation mechanism includes a plurality of circular arc projections on the outer peripheral end surface of the seat pressure foot, arcuate cutout portions arranged at positions corresponding to the projections in the body, and an engaging groove on the interior sides of the cutout groove on the interior sides of the cutout portions to guide the projections. By using the insertion/rotation mechanism, mounting and demounting the seat on and from the body can be easily carried out and assembling of the seat and the body can be carried out in a short time.

摘要翻译： 塑料蝶阀包括中空圆柱体，其中环形座通过座压脚固定在主体的流动通道的内周表面上，阀盘可旋转地且偏心地支撑在阀盘的杆上， 身体抵靠阀座上的阀盘的周边。 座椅压脚通过插入/旋转机构可拆卸地装配在主体的一个侧部中。 插入/旋转机构包括在座椅压力脚的外周端面上的多个圆弧形突起，布置在与本体中的突起相对应的位置处的弓形切口部分，以及在切口槽的内侧的接合槽 在切口部分的内侧上引导突起。 通过使用插入/旋转机构，可以容易地进行座椅的安装和拆卸，并且可以在短时间内进行座椅和身体的组装。

公开(公告)号：USD287471S

公开(公告)日：1986-12-30

申请号：US671378

申请日：1984-11-14

申请人： Shinji Sato ,  Hiroshi Tsukida

设计人： Shinji Sato ,  Hiroshi Tsukida

公开(公告)号：US4620885A

公开(公告)日：1986-11-04

申请号：US813921

申请日：1985-12-27

申请人： Naohiro Igata ,  Shinji Sato

发明人： Naohiro Igata ,  Shinji Sato

IPC分类号： H01B1/02 ,  C22C9/06 ,  C22F1/00 ,  C22F1/08

CPC分类号： C22C9/06

摘要： A spring material for electric and electronic parts having a high modulus of elasticity and good electrical conductivity. The material is made by melting Cu, Ni, Ti or mother alloy thereof and Cu--P as deoxidizer at a temperature between a melting point and 1,400.degree. C. to obtain a molten alloy consisting of 0.5.about.2.0% by weight of Ni, 0.1.about.1.0% by weight of Ti, less than 0.2% by weight of P and the remainder being Cu; casting the molten alloy into a metal mold to obtain an ingot; subjecting the ingot to hot (or warm) working, cold working and annealing; and finally rolling the annealed sheet above 50% and annealing it at low temperature with air cooling to obtain a formed product having a stable structure.

摘要翻译： 用于具有高弹性模量和良好导电性的电气和电子部件的弹簧材料。 该材料通过在熔点和1400℃之间的温度下熔化Cu，Ni，Ti或其母合金和Cu-P作为脱氧剂而制得，以获得熔融合金，其由0.5重量％的Ni，0.1 差异1.0重量％的Ti，小于0.2重量％的P，余量为Cu; 将熔融合金铸造成金属模具以获得锭料; 对锭进行热（或热）加工，冷加工和退火; 最后将退火的板材轧制50％以上，并在低温下通过空气冷却退火，得到具有稳定结构的成形产品。

公开(公告)号：US09190232B2

公开(公告)日：2015-11-17

申请号：US14233305

申请日：2012-08-24

申请人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

发明人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

IPC分类号： H01H33/26 ,  H02B13/065 ,  H01H33/668 ,  G01R31/12

CPC分类号： H01H33/26 ,  G01R31/1227 ,  H01H33/668 ,  H02B13/0655

摘要： Capacitors (5a, 5b) are provided in the insulators of bushings (4a, 4b), respectively. One ends of the capacitors (5a, 5b) are connected to central conductors (3a, 3b) side, and the other ends are connected to a tank (1) side at the ground potential. When a discharge signal from the outside of the tank (1) reaches the capacitors (5a, 5b) through the central conductors (3a, 3b), the capacitors (5a, 5b) work as a filter to attenuate and prevent the signal in the frequency band of the discharge waveform from propagating to the inside of the tank (1). When an antenna (7) placed in the tank (1) receives a signal in the frequency band of the discharge waveform, a discharge detection unit (20) determines that a discharge inside the tank has been detected.

摘要翻译： 电容器（5a，5b）分别设置在衬套（4a，4b）的绝缘体中。 电容器（5a，5b）的一端与中心导体（3a，3b）侧连接，另一端与接地电位的水箱（1）侧连接。 当来自罐（1）的外部的放电信号通过中心导体（3a，3b）到达电容器（5a，5b）时，电容器（5a，5b）用作滤波器，以衰减并防止 放电波形的频带从传播到罐（1）的内部。 当放置在储罐（1）中的天线（7）接收到放电波形的频带中的信号时，放电检测单元（20）确定已经检测到罐内的放电。