公开(公告)号：US20160161840A1

公开(公告)日：2016-06-09

申请号：US14560388

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chin Teong LIM ,  Guoxiang NING ,  Paul ACKMANN

IPC: G03F1/36

CPC classification number: G03F1/36

Abstract: Methods of calibrating an OPC model using converged results of CD measurements from at least two locations along a substrate profile of a 1D, 2D, or critical area structure are provided. Embodiments include calibrating an OPC model for a structure to be formed in a substrate; simulating a CD of the structure at at least two locations along a substrate profile of the structure using the OPC model; comparing the simulated CD of the structure at each location against a corresponding measured CD; recalibrating the OPC model based on the comparing of each simulated CD against the corresponding measured CD; repeating the steps of simulating, comparing, and recalibrating until comparing at a first of the at least two locations converges to a first criteria and comparing at each other of the at least two locations converges to a corresponding criteria; and forming the structure using the recalibrated OPC model.

Abstract translation: 提供了使用来自沿着1D，2D或临界区域结构的衬底轮廓的至少两个位置的CD测量的收敛结果来校准OPC模型的方法。 实施例包括校准用于要在基板中形成的结构的OPC模型; 使用OPC模型在结构的衬底轮廓的至少两个位置处模拟结构的CD; 将每个位置的结构的模拟CD与相应的测量CD进行比较; 基于每个模拟CD与对应的测量CD的比较重新校准OPC模型; 重复模拟，比较和重新校准的步骤，直到在至少两个位置的第一个位置比较收敛到第一标准，并且至少两个位置处的彼此的比较收敛到相应的标准; 并使用重新校准的OPC模型形成结构。

公开(公告)号：US20160079180A1

公开(公告)日：2016-03-17

申请号：US14948476

申请日：2015-11-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guoxiang NING ,  Chan Seob CHO ,  Paul ACKMANN ,  Jung Yu HSIEH ,  Hui Peng KOH

IPC: H01L23/544 ,  H01L29/49

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L21/3212 ,  H01L22/12 ,  H01L27/088 ,  H01L29/4916 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming dummy structures and an overlay mark protection zone over an active layer zone based on the shape of an overlay mark and the resulting device are provided. Embodiments include determining a size and a shape of an overlay mark; determining a size and a shape of an overlay mark protection zone based on the shape of the overlay mark; determining a shape of a plurality of dummy structures based on the shape of the overlay mark; determining a size and a shape of an active layer zone based on the size and the shape of the overlay mark and the plurality of dummy structures; forming the active layer zone in an active layer of a semiconductor substrate; forming the overlay mark and the plurality of dummy structures over the active layer zone in a poly layer of the semiconductor substrate; and planarizing the poly layer.

公开(公告)号：US20150310157A1

公开(公告)日：2015-10-29

申请号：US14263340

申请日：2014-04-28

Applicant: Globalfoundries Inc.

Inventor： Guoxiang NING ,  Paul ACKMANN ,  Chin Teong LIM

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F7/70441

Abstract: Methodologies and an apparatus for enabling OPC models to account for errors in the mask are disclosed. Embodiments include: determining a patterning layer of a circuit design; estimating a penetration ratio indicating a mask corner rounding error of a fabricated mask for forming the patterning layer in a fabricated circuit; and determining, by a processor, a compensation metric for optical proximity correction of the circuit design based on the penetration ratio.

Abstract translation: 公开了用于使OPC模型能够解决掩模中的错误的方法和装置。 实施例包括：确定电路设计的图形层; 估计在制造的电路中指示用于形成图案化层的制造掩模的掩模角舍入误差的穿透比; 以及基于所述穿透比，由处理器确定所述电路设计的光学邻近校正的补偿度量。

公开(公告)号：US20150192866A1

公开(公告)日：2015-07-09

申请号：US14146771

申请日：2014-01-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guoxiang NING ,  Christopher SPENCE ,  Paul ACKMANN ,  Chin Teong LIM

IPC: G03F7/20

CPC classification number: G03F7/70441 ,  G03F1/70 ,  Y02T10/82

Abstract: A method and apparatus for an efficient optical proximity correction (OPC) repair flow is disclosed. Embodiments may include receiving an input data stream of an integrated circuit (IC) design layout, performing one or more iterations of an OPC step and a layout polishing step on the input data stream, and performing a smart enhancement step if an output of a last iteration of the OPC step fails to satisfy one or more layout criteria and if a number of the one or more iterations satisfies a threshold value. Additional embodiments may include performing a pattern insertion process cross-linked with the OPC step, the pattern insertion process being a base optical rule check (ORC) process.

Abstract translation: 公开了一种用于高效光学邻近校正（OPC）修复流程的方法和装置。 实施例可以包括接收集成电路（IC）设计布局的输入数据流，对输入数据流执行OPC步骤的一个或多个迭代和布局抛光步骤，以及如果最后一个输出的输出执行智能增强步骤 OPC步骤的迭代不能满足一个或多个布局标准，并且如果一个或多个迭代的数量满足阈值。 附加实施例可以包括执行与OPC步骤交联的模式插入过程，模式插入过程是基本光学规则检查（ORC）过程。

公开(公告)号：US20150028500A1

公开(公告)日：2015-01-29

申请号：US13952231

申请日：2013-07-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guoxiang NING ,  Soon Yoeng TAN ,  Seok Yan POH ,  Paul ACKMANN

IPC: H01L23/544 ,  H01L21/70

CPC classification number: H01L23/544 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7076 ,  H01L21/70 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for forming an alignment mark and the resulting mark are disclosed. Embodiments may include forming a first shape having rotational symmetry; forming a second shape; and forming an alignment mark by combining the first shape and one or more of the second shape, wherein the alignment mark has rotational symmetry.

Abstract translation: 公开了形成对准标记的方法和所得到的标记。 实施例可以包括形成具有旋转对称性的第一形状; 形成第二形状; 以及通过组合所述第一形状和所述第二形状中的一个或多个来形成对准标记，其中所述对准标记具有旋转对称性。