公开(公告)号：US20170221889A1

公开(公告)日：2017-08-03

申请号：US15013169

申请日：2016-02-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Aritra Dasgupta ,  Benjamin G. Moser ,  Mohammad Hasanuzzaman ,  Murshed M. Chowdhury ,  Shahrukh A. Khan ,  Shafaat Ahmed ,  Joyeeta Nag

IPC: H01L27/088 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/49

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/511 ,  H01L29/518

Abstract: One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include: forming a first work function metal over a set of fins having at least a first fin and a second fin; implanting the first work function metal with a first species; removing the implanted first work function metal from over the first fin such that a remaining portion of the implanted first work function metal remains over the second fin; forming a second work function metal over the set of fins including over the remaining portion of the implanted first work function metal; implanting the second work function metal with a second species; and forming a metal over the implanted second work function metal over the set of fins thereby forming the gate stack.

公开(公告)号：US20160155889A1

公开(公告)日：2016-06-02

申请号：US15018398

申请日：2016-02-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat Ahmed ,  Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw ,  Raman Vaidyanathan

IPC: H01L31/18 ,  C25D17/00 ,  H01L31/0749

CPC classification number: H01L31/1876 ,  C25D17/001 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

Abstract: In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim 1 a chalcogenide absorber layer is formed on the substrate.

Abstract translation: 一方面，制造薄膜太阳能电池的方法包括以下步骤。 第一吸收材料作为层A沉积在衬底上，同时向衬底/层A施加压力。第二吸收剂材料作为层B沉积在层A上，同时向衬底/层B施加压力。第三吸收材料 在层B上沉积为层C，同时向衬底/层C施加压力。第四吸收材料作为层C沉积在层C上，同时向衬底/层D施加压力。第一吸收材料包括铜， 第二吸收体材料包括铟，第三吸收体材料包括镓，第四吸收体材料包括硫和硒中的一种或多种，​​并且其中通过执行权利要求1的步骤，在衬底上形成硫族化物吸收层。