公开(公告)号：US09583397B1

公开(公告)日：2017-02-28

申请号：US15151720

申请日：2016-05-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Derya Deniz ,  Benjamin G. Moser ,  Sunit S. Mahajan ,  Domingo A. Ferrer Luppi

IPC: H01L21/336 ,  H01L21/8238 ,  H01L29/45 ,  H01L21/3205 ,  H01L21/3215 ,  H01L21/768 ,  H01L21/321 ,  H01L21/285 ,  H01L21/266

CPC classification number: H01L21/823814 ,  H01L21/266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32053 ,  H01L21/3212 ,  H01L21/3215 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76859 ,  H01L21/76889 ,  H01L21/823871 ,  H01L29/45 ,  H01L29/785

Abstract: One aspect of the disclosure relates to a contact within a dielectric layer to a source/drain terminal of a field-effect-transistor (FET). The contact may include: a titanium-tantalum-silicide at a surface of the source/drain terminal; a barrier layer over the titanium-tantalum-silicide; and a metal over the barrier layer and extending to a top surface of the dielectric layer.

Abstract translation: 本公开的一个方面涉及电介质层中与场效应晶体管（FET）的源极/漏极端子的接触。 接触可以包括：在源极/漏极端子的表面处的钛 - 钽 - 硅化物; 在钛 - 钽 - 硅化物上的阻挡层; 以及阻挡层上的金属并延伸到电介质层的顶表面。

公开(公告)号：US10263065B2

公开(公告)日：2019-04-16

申请号：US14932441

申请日：2015-11-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Domingo A. Ferrer Luppi ,  Aritra Dasgupta ,  Benjamin G. Moser

IPC: H01L49/02

Abstract: Methods of forming a metal resistor are provided. The methods may include: depositing a metal layer, e.g., tungsten, on a substrate; and forming the metal resistor by implanting a semiconductor species, e.g., silicon and/or germanium, into the metal layer to form a semiconductor-metal alloy layer from at least a portion of the metal layer. In certain embodiments, an adhesion layer may be deposited by ALD prior to metal layer depositing. The metal resistor has a sheet resistance that remains substantially constant prior to and after subsequent annealing.

公开(公告)号：US09748235B2

公开(公告)日：2017-08-29

申请号：US15013169

申请日：2016-02-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Aritra Dasgupta ,  Benjamin G. Moser ,  Mohammad Hasanuzzaman ,  Murshed M. Chowdhury ,  Shahrukh A. Khan ,  Shafaat Ahmed ,  Joyeeta Nag

IPC: H01L27/088 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/511 ,  H01L29/518

Abstract: One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include: forming a first work function metal over a set of fins having at least a first fin and a second fin; implanting the first work function metal with a first species; removing the implanted first work function metal from over the first fin such that a remaining portion of the implanted first work function metal remains over the second fin; forming a second work function metal over the set of fins including over the remaining portion of the implanted first work function metal; implanting the second work function metal with a second species; and forming a metal over the implanted second work function metal over the set of fins thereby forming the gate stack.

公开(公告)号：US20170221889A1

公开(公告)日：2017-08-03

申请号：US15013169

申请日：2016-02-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Aritra Dasgupta ,  Benjamin G. Moser ,  Mohammad Hasanuzzaman ,  Murshed M. Chowdhury ,  Shahrukh A. Khan ,  Shafaat Ahmed ,  Joyeeta Nag

IPC: H01L27/088 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/49

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/511 ,  H01L29/518

Abstract: One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include: forming a first work function metal over a set of fins having at least a first fin and a second fin; implanting the first work function metal with a first species; removing the implanted first work function metal from over the first fin such that a remaining portion of the implanted first work function metal remains over the second fin; forming a second work function metal over the set of fins including over the remaining portion of the implanted first work function metal; implanting the second work function metal with a second species; and forming a metal over the implanted second work function metal over the set of fins thereby forming the gate stack.

公开(公告)号：US10020260B1

公开(公告)日：2018-07-10

申请号：US15388530

申请日：2016-12-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat Ahmed ,  Benjamin G. Moser ,  Vimal Kumar Kamineni ,  Dinesh Koli ,  Vishal Chhabra

IPC: H01L23/48 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/265 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/522

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.

公开(公告)号：US09685334B1

公开(公告)日：2017-06-20

申请号：US15134917

申请日：2016-04-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yue Ke ,  Mohammad Hasanuzzaman ,  Benjamin G. Moser ,  Shahrukh A. Khan ,  Sean M. Polvino

IPC: H01L21/225 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/2254 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/2257 ,  H01L29/66795

Abstract: Methods of forming a semiconductor fin and methods for controlling dopant diffusion to a semiconductor fin are disclosed herein. The methods provide alternative ways to incorporate a carbon dopant into the fin to later control out-diffusion of dopants from a dopant-including epitaxial layer. One method includes depositing a carbon-containing layer over a portion of the fin adjacent to the gate and annealing to diffuse carbon from the carbon-containing layer into at least the portion of the semiconductor fin. This method can be applied to SOI or bulk semiconductor substrates. Another method includes epitaxially growing a carbon dopant containing semiconductor layer for later use in forming the fin.

公开(公告)号：US20170125509A1

公开(公告)日：2017-05-04

申请号：US14932441

申请日：2015-11-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Domingo A. Ferrer Luppi ,  Aritra Dasgupta ,  Benjamin G. Moser

IPC: H01L49/02

CPC classification number: H01L28/24

Abstract: Methods of forming a metal resistor are provided. The methods may include: depositing a metal layer, e.g., tungsten, on a substrate; and forming the metal resistor by implanting a semiconductor species, e.g., silicon and/or germanium, into the metal layer to form a semiconductor-metal alloy layer from at least a portion of the metal layer. In certain embodiments, an adhesion layer may be deposited by ALD prior to metal layer depositing. The metal resistor has a sheet resistance that remains substantially constant prior to and after subsequent annealing.