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公开(公告)号：US20170141036A1
公开(公告)日：2017-05-18
申请号：US14939319
申请日：2015-11-12
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Deniz E. Civay , Erik R. Hosler
IPC: H01L23/535 , H01L23/532 , H01L21/768
CPC classification number: H01L23/535 , H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L23/5328 , H01L23/53295
Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.
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公开(公告)号：US20170141035A1
公开(公告)日：2017-05-18
申请号：US14939251
申请日：2015-11-12
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Deniz E. Civay , Erik R. Hosler
IPC: H01L23/535 , H01L23/532 , H01L21/768
CPC classification number: H01L23/535 , H01L21/76802 , H01L21/76843 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L23/5328 , H01L23/53295
Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.
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公开(公告)号：US09397012B2
公开(公告)日：2016-07-19
申请号：US14316915
申请日：2014-06-27
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Deniz E. Civay , Ralph Schlief
IPC: H01L21/8242 , H01L21/66 , H01L21/78 , G01B11/00 , G03F1/44
CPC classification number: H01L22/12 , G01B11/002 , G03F1/44 , G03F7/70625 , G03F7/70683 , H01L21/78 , H01L22/30
Abstract: A method includes forming a first plurality of instances of a first pattern on a substrate. The first pattern includes a plurality of features defining a first spacing between features in a first direction. The instances in the first plurality are offset from one another at least in a second direction other than the first direction. The substrate is cleaved along a cleavage line. At least a first critical dimension of a feature in the first plurality of instances intersected by the cleavage line is measured.
Abstract translation: 一种方法包括在衬底上形成第一图案的第一多个实例。 第一图案包括限定第一方向上的特征之间的第一间隔的多个特征。 第一多个中的实例至少在除了第一方向之外的第二方向上彼此偏移。 底物沿切割线切割。 测量由切割线相交的第一多个实例中的特征的至少第一临界尺寸。
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公开(公告)号：US20150380320A1
公开(公告)日：2015-12-31
申请号：US14316915
申请日：2014-06-27
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Deniz E. Civay , Ralph Schlief
CPC classification number: H01L22/12 , G01B11/002 , G03F1/44 , G03F7/70625 , G03F7/70683 , H01L21/78 , H01L22/30
Abstract: A method includes forming a first plurality of instances of a first pattern on a substrate. The first pattern includes a plurality of features defining a first spacing between features in a first direction. The instances in the first plurality are offset from one another at least in a second direction other than the first direction. The substrate is cleaved along a cleavage line. At least a first critical dimension of a feature in the first plurality of instances intersected by the cleavage line is measured.
Abstract translation: 一种方法包括在衬底上形成第一图案的第一多个实例。 第一图案包括限定第一方向上的特征之间的第一间隔的多个特征。 第一多个中的实例至少在除了第一方向之外的第二方向上彼此偏移。 底物沿切割线切割。 测量由切割线相交的第一多个实例中的特征的至少第一临界尺寸。
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