公开(公告)号：US10444645B1

公开(公告)日：2019-10-15

申请号：US16031677

申请日：2018-07-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Sheldon J. Meyers

IPC: G03B27/52 ,  G03F7/20

Abstract: A method includes identifying a first contamination region of a collector of a light source and enabling a subset of a plurality of temperature control elements positioned on the collector to cause a second contamination region to be formed on the collector symmetric to the first contamination region.

公开(公告)号：US20170141027A1

公开(公告)日：2017-05-18

申请号：US14939365

申请日：2015-11-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Deniz E. Civay

IPC: H01L23/522 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/31155 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53295

Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.

公开(公告)号：US20200018709A1

公开(公告)日：2020-01-16

申请号：US16036066

申请日：2018-07-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Moshe Preil

IPC: G01N21/956 ,  G03F7/20 ,  G01N21/95 ,  H01L21/67 ,  H01L23/544 ,  H01L21/687

Abstract: A method includes measuring a topography of a semiconductor wafer. A distortion function is generated based on the measured topography. Measured alignment data associated with the semiconductor wafer is adjusted using the distortion function. At least one correction factor for an exposure tool is generated based on the adjusted alignment data. The exposure tool is configured based on the at least one correction factor.

公开(公告)号：US09633942B1

公开(公告)日：2017-04-25

申请号：US14939365

申请日：2015-11-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Deniz E. Civay

IPC: H01L21/311 ,  H01L21/3115 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/31155 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53295

Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.

公开(公告)号：US20170141036A1

公开(公告)日：2017-05-18

申请号：US14939319

申请日：2015-11-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Deniz E. Civay ,  Erik R. Hosler

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5328 ,  H01L23/53295

Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.

公开(公告)号：US20170141035A1

公开(公告)日：2017-05-18

申请号：US14939251

申请日：2015-11-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Deniz E. Civay ,  Erik R. Hosler

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5328 ,  H01L23/53295

Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.

公开(公告)号：US09754829B2

公开(公告)日：2017-09-05

申请号：US14939464

申请日：2015-11-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Deniz E. Civay

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76897 ,  H01L21/76802 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295

Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.

公开(公告)号：US09748176B2

公开(公告)日：2017-08-29

申请号：US14939319

申请日：2015-11-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Deniz E. Civay ,  Erik R. Hosler

IPC: H01L21/322 ,  H01L23/535 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/535 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5328 ,  H01L23/53295

Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.

公开(公告)号：US20170140985A1

公开(公告)日：2017-05-18

申请号：US14939464

申请日：2015-11-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Deniz E. Civay

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76897 ,  H01L21/76802 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295

Abstract: A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.

公开(公告)号：US10748671B2

公开(公告)日：2020-08-18

申请号：US16031767

申请日：2018-07-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Sheldon J. Meyers

IPC: G21K1/04 ,  H05G2/00 ,  G03F7/20 ,  G21K1/06

Abstract: A method includes identifying a contamination region of a collector in a light source, positioning a subset of a plurality of movable light-blocking elements around a periphery of a circular aperture of the light source to compensate for the contamination region, and transmitting light from the light source through the circular aperture.