利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

120 条记录 (耗时 0.074 秒)

    Inline method to monitor ONO stack quality
    11.
    发明授权
    Inline method to monitor ONO stack quality 有权
    监控ONO堆栈质量的内联方法

    公开(公告)号：US08772059B2

    公开(公告)日：2014-07-08

    申请号：US13430631

    申请日：2012-03-26

    申请人： Yu Yang ,  Krishnaswamy Ramkumar

    发明人： Yu Yang ,  Krishnaswamy Ramkumar

    IPC分类号： H01L21/66

    CPC分类号： H01L29/792 ,  H01L22/14 ,  H01L29/66833

    摘要： Embodiments of structures and methods for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling-layer are described. In one embodiment, the method comprises: forming on a substrate a structure including a nitrided tunneling-layer and a charge-storage-layer overlying the tunneling-layer comprising a first charge-storage layer adjacent to the tunneling-layer, and a second charge-storage layer overlying the first charge-storage layer, wherein the first charge-storage layer is separated from the second charge-storage layer by a anti-tunneling layer comprising an oxide; depositing a positive charge on the charge-storage-layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge-storage-layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages.

    摘要翻译： 描述了用于确定包括电荷存储层和隧穿层的非易失性存储晶体管的操作特性的结构和方法的实施例。 在一个实施例中，该方法包括：在衬底上形成包括氮化隧道层和覆盖隧道层的电荷存储层的结构，该隧穿层包括与隧道层相邻的第一电荷存储层和第二电荷 覆盖在第一电荷存储层上的第一电荷存储层，其中第一电荷存储层通过包含氧化物的反隧道层与第二电荷存储层分离; 在电荷存储层上沉积正电荷并确定第一电压以建立通过电荷存储层和隧道层的第一泄漏电流; 在电荷存储层上沉积负电荷并确定第二电压以建立通过电荷存储层和隧穿层的第二泄漏电流; 以及通过计算所述第一和第二电压之间的差来确定差分电压。

    Inline method to monitor ONO stack quality
    12.
    发明授权
    Inline method to monitor ONO stack quality 有权
    监控ONO堆栈质量的内联方法

    公开(公告)号：US08772057B1

    公开(公告)日：2014-07-08

    申请号：US13107853

    申请日：2011-05-13

    申请人： Yu Yang

    发明人： Yu Yang

    IPC分类号： H01L21/66

    CPC分类号： H01L22/14

    摘要： Structures and methods are provided for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling-layer. In one embodiment, the method comprises: forming a structure including a charge-storage-layer overlying a tunneling-layer on a substrate; depositing a positive charge on the charge-storage-layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge-storage-layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages. Other embodiments are also disclosed.

    摘要翻译： 提供了用于确定包括电荷存储层和隧道层的非易失性存储晶体管的操作特性的结构和方法。 在一个实施例中，该方法包括：形成包括覆盖在衬底上的隧道层的电荷存储层的结构; 在电荷存储层上沉积正电荷并确定第一电压以建立通过电荷存储层和隧道层的第一泄漏电流; 在电荷存储层上沉积负电荷并确定第二电压以建立通过电荷存储层和隧穿层的第二泄漏电流; 以及通过计算所述第一和第二电压之间的差来确定差分电压。 还公开了其他实施例。

    Methods and devices for adjusting resource management procedures in heterogeneous communication networks
    13.
    发明授权
    Methods and devices for adjusting resource management procedures in heterogeneous communication networks 有权
    用于调整异构通信网络资源管理程序的方法和装置

    公开(公告)号：US08725153B2

    公开(公告)日：2014-05-13

    申请号：US13420116

    申请日：2012-03-14

    申请人： Konstantinos Dimou ,  Yu Yang

    发明人： Konstantinos Dimou ,  Yu Yang

    IPC分类号： H04W36/00 ,  H04W72/00 ,  H04W4/00 ,  H04W24/00

    CPC分类号： H04W36/0083 ,  H04W36/14 ,  H04W36/30 ,  H04W36/36 ,  H04W48/08

    摘要： Devices and methods for adjusting resource management procedures in heterogeneous communication networks are disclosed. In one aspect, a method for adjusting radio resource management procedures in a mobile device communicating with a node operating in a cell in a heterogeneous communication network includes transmitting a first message to the node, the first message including a request for cell information, receiving a second message transmitted from the node, the second message including the requested cell information, measuring signal reception information, processing the received cell information and measured signal reception information to determine an adjustment to a radio resource management procedure, and adjusting the radio resource management procedure based on the determined adjustment. The first and second messages may be radio resource control (RRC) messages, such as RRC connection request and response messages.

    摘要翻译： 公开了用于调整异构通信网络中的资源管理过程的装置和方法。 一方面，一种用于调整移动设备中的无线电资源管理过程的方法，该移动设备与在异构通信网络中的小区中操作的节点进行通信包括向所述节点发送第一消息，所述第一消息包括对小区信息的请求， 从节点发送的第二消息，第二消息包括所请求的小区信息，测量信号接收信息，处理接收的小区信息和测量的信号接收信息，以确定对无线电资源管理过程的调整，并且基于 对确定的调整。 第一和第二消息可以是无线电资源控制（RRC）消息，诸如RRC连接请求和响应消息。

    PROCESS FOR PREPARING SHELF-STABLE CURABLE POLYSILAZANES, AND POLYSILAZANES PREPARED THEREBY
    14.
    发明申请
    PROCESS FOR PREPARING SHELF-STABLE CURABLE POLYSILAZANES, AND POLYSILAZANES PREPARED THEREBY 有权
    制备稳定的可固化多晶硅的方法和制备的多晶硅

    公开(公告)号：US20130178595A1

    公开(公告)日：2013-07-11

    申请号：US13515333

    申请日：2010-12-16

    申请人： Yu Yang ,  George G.I. Moore

    发明人： Yu Yang ,  George G.I. Moore

    IPC分类号： C08G77/62

    CPC分类号： C08G77/62

    摘要： A process for preparing curable oligomeric and/or polymeric polysilazanes comprises (a) forming at least one dihalosilane-base adduct by reacting at least one dihalosilane with at least one base; (b) optionally, combining at least one dihalosilane-base adduct and at least one organodihalosilane; and (c) carrying out ammonolysis of at least one dihalosilane-base adduct or of the resulting combination of at least one dihalosilane-base adduct and at least one organodihalosilane; with the proviso that the base (1) is used for the dihalosilane-base adduct formation in a limited amount that is less than or equal to twice the stoichiometric amount of silicon-halogen bonds in the dihalosilane or (2) is used for the dihalosilane-base adduct formation in excess of this limited amount and, prior to the ammonolysis, the total amount of the resulting reacted and unreacted base is reduced to no more than this limited amount.

    摘要翻译： 制备可固化低聚和/或聚合聚硅氮烷的方法包括（a）通过使至少一种二卤硅烷与至少一个碱反应形成至少一种二卤代硅烷基加合物; （b）任选地，组合至少一种二卤代硅烷基加合物和至少一种有机二卤硅烷; 和（c）进行至少一种二卤硅烷基加合物的氨解或至少一种二卤代硅烷基加合物和至少一种有机二卤代硅烷的组合; 条件是碱（1）用于二卤代硅烷加合物形成，其限制量小于或等于二卤代硅烷中的硅 - 卤键的化学计量量的两倍，或（2）用于二卤代硅烷 - 碱加合物形成超过该有限量，并且在氨解之前，所得到的反应和未反应碱的总量减少到不超过该限制量。

    INLINE METHOD TO MONITOR ONO STACK QUALITY
    15.
    发明申请
    INLINE METHOD TO MONITOR ONO STACK QUALITY 有权
    用于监控堆栈质量的在线方法

    公开(公告)号：US20130175599A1

    公开(公告)日：2013-07-11

    申请号：US13430631

    申请日：2012-03-26

    申请人： Yu Yang ,  Krishnaswamy Ramkumar

    发明人： Yu Yang ,  Krishnaswamy Ramkumar

    IPC分类号： H01L29/792 ,  H01L21/66

    CPC分类号： H01L29/792 ,  H01L22/14 ,  H01L29/66833

    摘要： Embodiments of structures and methods for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling-layer are described. In one embodiment, the method comprises: forming on a substrate a structure including a nitrided tunneling-layer and a charge-storage-layer overlying the tunneling-layer comprising a first charge-storage layer adjacent to the tunneling-layer, and a second charge-storage layer overlying the first charge-storage layer, wherein the first charge-storage layer is separated from the second charge-storage layer by a anti-tunneling layer comprising an oxide; depositing a positive charge on the charge-storage-layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge-storage-layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages.

    摘要翻译： 描述了用于确定包括电荷存储层和隧穿层的非易失性存储晶体管的操作特性的结构和方法的实施例。 在一个实施例中，该方法包括：在衬底上形成包括氮化隧道层和覆盖隧道层的电荷存储层的结构，该隧穿层包括与隧道层相邻的第一电荷存储层和第二电荷 覆盖在第一电荷存储层上的第一电荷存储层，其中第一电荷存储层通过包含氧化物的反隧道层与第二电荷存储层分离; 在电荷存储层上沉积正电荷并确定第一电压以建立通过电荷存储层和隧道层的第一泄漏电流; 在电荷存储层上沉积负电荷并确定第二电压以建立通过电荷存储层和隧穿层的第二泄漏电流; 以及通过计算所述第一和第二电压之间的差来确定差分电压。

    Mobile wireless base station
    19.
    发明授权
    Mobile wireless base station 有权
    移动无线基站

    公开(公告)号：US07995516B2

    公开(公告)日：2011-08-09

    申请号：US10515771

    申请日：2003-06-30

    申请人： Zhen-Hong Zhou ,  Yu Yang ,  Wei Qingxin ,  Weizhou Wang ,  Shi Lei

    发明人： Zhen-Hong Zhou ,  Yu Yang ,  Wei Qingxin ,  Weizhou Wang ,  Shi Lei

    IPC分类号： H04W4/00

    CPC分类号： H04L12/46 ,  H04L12/462 ,  H04L63/08 ,  H04M7/009 ,  H04M2203/1091 ,  H04M2207/18 ,  H04W84/12 ,  H04W92/02

    摘要： A mobile wireless bridge (MWB) (110) is able to bridge traffic in either direction between a wireless LAN (140) and a wireless WAN (130), and support roaming of LAN clients (141-143, 151-153) and of the MWB (110) itself. Through the MWB (110), wired (150) and wireless LAN (140) clients (141-143, 151-153) and users are provided Internet (190) connectivity even if the LAN client (141-143, 151-153) is not otherwise able to access the wireless WAN (120). Preferred MWBs (110) will utilize mobile cellular communication networks 100 as part of a WAN (120, 130) used to obtain access to Internet (190) resources. LAN clients (141-143, 151-153) and users can also access each other through the MWB (110) with the MWB (110) functioning as a hub, switch, gateway, and/or access point. Some MWBs (110) will be adapted to access multiple types of LANs (140, 150) and multiple types of WANs (120, 130).

    摘要翻译： 移动无线网桥（MWB）（110）能够在无线LAN（140）和无线WAN（130）之间的任一方向上桥接业务，并且支持LAN客户端（141-143,151-153）的漫游和 MWB（110）本身。 通过MWB（110），有线（150）和无线LAN（140）客户端（141-143,151-153）和用户被提供互联网（190）连接，即使LAN客户端（141-143,151-153） 否则无法访问无线WAN（120）。 优选的MWB（110）将利用移动蜂窝通信网络100作为用于获得对因特网（190）资源的访问的WAN（120,130）的一部分。 LAN客户端（141-143,151-153）和用户也可以通过MWB（110）彼此访问，MWB（110）用作集线器，交换机，网关和/或接入点。 一些MWB（110）将适于访问多种类型的LAN（140,150）和多种类型的WAN（120,130）。