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    High density plasma physical vapor deposition
    1.
    发明授权
    High density plasma physical vapor deposition 失效
    高密度等离子体物理气相沉积

    公开(公告)号：US5792522A

    公开(公告)日：1998-08-11

    申请号：US715109

    申请日：1996-09-18

    申请人： Shu Jin ,  Xiao Chun Mu ,  Xing Chen ,  Lawrence Bourget

    发明人： Shu Jin ,  Xiao Chun Mu ,  Xing Chen ,  Lawrence Bourget

    IPC分类号： C23C14/04 ,  C23C14/35 ,  H01L21/768 ,  H05H1/30

    CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/357 ,  H01J37/32192 ,  H01J37/32678 ,  H01J37/34 ,  H01L21/76877 ,  H01J2237/3325

    摘要： A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

    摘要翻译： 使用电子回旋共振辅助的高密度等离子体物理气相沉积系统在诸如晶片的基板上的开口中形成材料的方法。 该方法包括以下步骤：保持约1mTorr至约6mTorr范围内的压力; 通过提供在约3千瓦（kW）至约5kW的范围内的微波功率产生等离子体; 在大约（负）-600伏至大约-1000伏的范围内向材料的目标源施加直流（DC）电压; 向第一电磁体提供预定量的电流; 并且向第二电磁体提供小于所述预定量的电流，其中所述第二电磁体设置在所述第一电磁体下方; 并在开口中形成一层材料。

    Copper alloys for interconnections having improved electromigration characteristics and methods of making same
    2.
    发明授权
    Copper alloys for interconnections having improved electromigration characteristics and methods of making same 有权
    具有改进的电迁移特性的互连用铜合金及其制造方法

    公开(公告)号：US07220674B2

    公开(公告)日：2007-05-22

    申请号：US10859327

    申请日：2004-06-01

    申请人： Thomas N. Marieb ,  Paul McGregor ,  Carolyn Block ,  Shu Jin

    发明人： Thomas N. Marieb ,  Paul McGregor ,  Carolyn Block ,  Shu Jin

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Formation of copper alloy interconnect lines on integrated circuits includes introducing dopant elements into a copper layer. Copper alloy interconnect lines may be formed by providing a doping layer over a copper layer, driving dopant material into the copper layer with a high temperature step, and polishing the copper layer to form individual lines. Copper alloy interconnect lines may be formed by implanting dopants into individual lines. Copper alloy interconnect lines may be formed by providing a doped seed layer with a capping layer to prevent premature oxidation, forming an overlying copper layer, driving in the dopants, and polishing to form individual lines. In this way, electromigration resistance and adhesion characteristics may be improved by having relatively higher doping concentrations at outer portions of an interconnect line while the desired low electrical resistivity of the interconnect is maintained by keeping the interior portions of the interconnect with a substantially lower doping concentration.

    摘要翻译： 在集成电路上形成铜合金布线包括将掺杂剂元素引入到铜层中。 可以通过在铜层上设置掺杂层，以高温步骤将掺杂剂材料驱入铜层，并且对铜层进行抛光以形成单独的线来形成铜合金布线。 铜合金互连线可以通过将掺杂剂注入各个线中而形成。 可以通过提供具有覆盖层的掺杂种子层来形成铜合金互连线，以防止过早氧化，形成覆盖的铜层，在掺杂剂中驱动，并抛光以形成单独的线。 以这种方式，可以通过在互连线的外部部分具有相对较高的掺杂浓度来提高电迁移电阻和粘合特性，同时通过将互连的内部部分保持在基本上较低的掺杂浓度来维持互连的期望的低电阻率 。

    Copper alloys for interconnections having improved electromigration characteristics and methods of making same
    5.
    发明授权
    Copper alloys for interconnections having improved electromigration characteristics and methods of making same 失效
    具有改进的电迁移特性的互连用铜合金及其制造方法

    公开(公告)号：US06977220B2

    公开(公告)日：2005-12-20

    申请号：US10860428

    申请日：2004-06-02

    申请人： Thomas N. Marieb ,  Paul McGregor ,  Carolyn Block ,  Shu Jin

    发明人： Thomas N. Marieb ,  Paul McGregor ,  Carolyn Block ,  Shu Jin

    IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Formation of copper alloy interconnect lines on integrated circuits includes introducing dopant elements into a copper layer. Copper alloy interconnect lines may be formed by providing a doping layer over a copper layer, driving dopant material into the copper layer with a high temperature step, and polishing the copper layer to form individual lines. Copper alloy interconnect lines may be formed by implanting dopants into individual lines. Copper alloy interconnect lines may be formed by providing a doped seed layer with a capping layer to prevent premature oxidation, forming an overlying copper layer, driving in the dopants, and polishing to form individual lines. In this way, electromigration resistance and adhesion characteristics may be improved by having relatively higher doping concentrations at outer portions of an interconnect line while the desired low electrical resistivity of the interconnect is maintained by keeping the interior portions of the interconnect with a substantially lower doping concentration.

    摘要翻译： 在集成电路上形成铜合金布线包括将掺杂剂元素引入到铜层中。 可以通过在铜层上设置掺杂层，以高温步骤将掺杂剂材料驱入铜层，并且对铜层进行抛光以形成单独的线来形成铜合金布线。 铜合金互连线可以通过将掺杂剂注入各个线中而形成。 可以通过提供具有覆盖层的掺杂种子层来形成铜合金互连线，以防止过早氧化，形成覆盖的铜层，在掺杂剂中驱动，并抛光以形成单独的线。 以这种方式，可以通过在互连线的外部部分具有相对较高的掺杂浓度来提高电迁移电阻和粘合特性，同时通过将互连的内部部分保持在基本上较低的掺杂浓度来维持互连的期望的低电阻率 。