MULTI-BLOCK SPUTTERING TARGET AND ASSOCIATED METHODS AND ARTICLES
    14.
    发明申请
    MULTI-BLOCK SPUTTERING TARGET AND ASSOCIATED METHODS AND ARTICLES 有权
    多块爆炸目标和相关方法和文章

    公开(公告)号:US20160196961A1

    公开(公告)日:2016-07-07

    申请号:US15067358

    申请日:2016-03-11

    Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

    Abstract translation: 包括至少两个固结块的溅射靶,每个块包括含量大于约30重量%的钼和至少一种另外的合金成分的合金; 以及所述至少两个固结块之间的接头,所述接头由于添加的粘合剂(例如,粉末,箔或其它物质)而没有任何微结构,并且基本上没有任何可见的接合线,所述目标大于约 200μm宽度(例如,小于约50μm宽)。 制造目标的方法包括在1080℃以下的热等静压,在压制之前可以表面制备(例如粗糙化至预定粗糙度值)的固结的执行块。

    Method of making molybdenum-containing targets comprising three metal elements
    16.
    发明授权
    Method of making molybdenum-containing targets comprising three metal elements 有权
    制造包含三种金属元素的含钼靶的方法

    公开(公告)号:US09017762B2

    公开(公告)日:2015-04-28

    申请号:US13856617

    申请日:2013-04-04

    Abstract: The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium.

    Abstract translation: 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤:将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 当溅射靶位于真空室(例如,使用磁场和/或电场)时,从溅射靶的表面去除原子。 沉积层优选是包含约50原子%或更多的钼,0.5至45原子%的选自铌和钒的第二金属元素的含钼合金; 和0.5〜45原子%的选自钽,铬,钒,铌和钛的第三金属元素。

    Multi-block sputtering target and associated methods and articles

    公开(公告)号:US11328912B2

    公开(公告)日:2022-05-10

    申请号:US16902830

    申请日:2020-06-16

    Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

    Molybdenum containing targets
    19.
    发明授权

    公开(公告)号:US10829849B2

    公开(公告)日:2020-11-10

    申请号:US15908896

    申请日:2018-03-01

    Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

    Multi-block sputtering target and associated methods and articles

    公开(公告)号:US10211035B2

    公开(公告)日:2019-02-19

    申请号:US15890463

    申请日:2018-02-07

    Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

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