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    Method of preparing catalyst for manufacturing carbon nanotubes
    13.
    发明申请
    Method of preparing catalyst for manufacturing carbon nanotubes 审中-公开
    制备碳纳米管制备催化剂的方法

    公开(公告)号：US20070020167A1

    公开(公告)日：2007-01-25

    申请号：US11158047

    申请日：2005-06-22

    Applicant: In-Taek Han ,  Ha-Jin Kim

    Inventor： In-Taek Han ,  Ha-Jin Kim

    IPC: D01F9/12

    CPC classification number: D01F9/12 ,  B82Y30/00

    Abstract: A novel method of forming catalyst particles, on which carbon nanotubes grow based, on a substrate with increased uniformity, and a method of synthesizing carbon nanotubes having improved uniformity are provided. A catalytic metal precursor solution is applied to a substrate. The applied catalytic metal precursor solution is freeze-dried, and then reduced to catalytic metal. The method of forming catalyst particles can minimize agglomeration and/or recrystallization of catalyst particles when forming the catalyst particles by freeze-drying the catalyst metal precursor solution. The catalyst particles formed by the method has a very uniform particle size and are very uniformly distributed on the substrate.

    Abstract translation: 提供了在均匀性增加的基板上形成碳纳米管生长的催化剂颗粒的新方法，以及合成具有改善的均匀性的碳纳米管的方法。 将催化金属前体溶液施加到基底上。 将所施加的催化金属前体溶液冷冻干燥，然后还原成催化金属。 形成催化剂颗粒的方法可以通过冷冻干燥催化剂金属前体溶液形成催化剂颗粒来最小化催化剂颗粒的附聚和/或再结晶。 通过该方法形成的催化剂颗粒具有非常均匀的粒度并且非常均匀地分布在基材上。

    Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same
    14.
    发明申请
    Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same 失效
    碳纳米管结构及其制造方法，以及场发射器和显示装置各自采用

    公开(公告)号：US20050046322A1

    公开(公告)日：2005-03-03

    申请号：US10929381

    申请日：2004-08-31

    Applicant: Ha-Jin Kim ,  In-Taek Han

    Inventor： Ha-Jin Kim ,  In-Taek Han

    IPC: H01J1/30 ,  C01B31/02 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  D01F9/12 ,  B32B9/00 ,  B32B15/04 ,  H04L12/50

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/34 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/30 ,  Y10T428/31678

    Abstract: A carbon-nano tube (CNT) structure comprises a substrate and a plurality of CNTs, each CNT comprising a plurality of first CNTs grown perpendicular to the substrate and a plurality of second CNTs grown on sidewalls of the first CNTs. A method of manufacturing CNTs includes growing first CNTs on a substrate on which a catalyst material layer is formed, and growing second CNTs on surfaces of the first CNTs from a catalyst material on surfaces of the first CNTs. The second CNTs grown on the sidewalls of the first CNTs emit electrons at a low voltage. In addition, the CNT structure exhibits high electron emission current due to the second CNTs being used as electron emission sources, and exhibits uniform field emission due to the uniform diameter of the first CNTs. A display device incorporates the above-described structure.

    Abstract translation: 碳纳米管（CNT）结构包括衬底和多个CNT，每个CNT包括垂直于衬底生长的多个第一CNT和在第一CNT的侧壁上生长的多个第二CNT。 制造CNT的方法包括在其上形成有催化剂材料层的基板上生长第一CNT，以及在第一CNT的表面上从催化剂材料在第一CNT的表面上生长第二CNT。 在第一CNT的侧壁上生长的第二CNT在低电压下发射电子。 此外，由于第二CNT用作电子发射源，CNT结构表现出高的电子发射电流，并且由于第一CNT的直径均匀，表现出均匀的场发射。 显示装置结合了上述结构。

    Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same
    15.
    发明授权
    Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same 失效
    碳纳米管结构及其制造方法，以及场发射器和显示装置各自采用

    公开(公告)号：US07879398B2

    公开(公告)日：2011-02-01

    申请号：US10929381

    申请日：2004-08-31

    Applicant: Ha-Jin Kim ,  In-Taek Han

    Inventor： Ha-Jin Kim ,  In-Taek Han

    IPC: C23C16/00

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/34 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/30 ,  Y10T428/31678

    Abstract: A carbon-nano tube (CNT) structure comprises a substrate and a plurality of CNTs, each CNT comprising a plurality of first CNTs grown perpendicular to the substrate and a plurality of second CNTs grown on sidewalls of the first CNTs. A method of manufacturing CNTs includes growing first CNTs on a substrate on which a catalyst material layer is formed, and growing second CNTs on surfaces of the first CNTs from a catalyst material on surfaces of the first CNTs. The second CNTs grown on the sidewalls of the first CNTs emit electrons at a low voltage. In addition, the CNT structure exhibits high electron emission current due to the second CNTs being used as electron emission sources, and exhibits uniform field emission due to the uniform diameter of the first CNTs. A display device incorporates the above-described structure.

    Abstract translation: 碳纳米管（CNT）结构包括衬底和多个CNT，每个CNT包括垂直于衬底生长的多个第一CNT和在第一CNT的侧壁上生长的多个第二CNT。 制造CNT的方法包括在其上形成有催化剂材料层的基板上生长第一CNT，以及在第一CNT的表面上从催化剂材料在第一CNT的表面上生长第二CNT。 在第一CNT的侧壁上生长的第二CNT在低电压下发射电子。 此外，由于第二CNT用作电子发射源，CNT结构表现出高的电子发射电流，并且由于第一CNT的直径均匀，表现出均匀的场发射。 显示装置结合了上述结构。

    Field emission display (FED) and method of manufacture thereof
    17.
    发明申请
    Field emission display (FED) and method of manufacture thereof 审中-公开
    场发射显示（FED）及其制造方法

    公开(公告)号：US20090098790A1

    公开(公告)日：2009-04-16

    申请号：US12232858

    申请日：2008-09-25

    Applicant: In-Taek Han ,  Tae-Sik Oh ,  Ha-Jin Kim ,  Andrei Zoulkarneev ,  Jong-Min Kim

    Inventor： In-Taek Han ,  Tae-Sik Oh ,  Ha-Jin Kim ,  Andrei Zoulkarneev ,  Jong-Min Kim

    IPC: H01J9/20

    CPC classification number: B82Y10/00 ,  H01J9/025 ,  H01J29/06 ,  H01J29/481

    Abstract: A Field Emission Display (FED) and a method of manufacturing the FED are provided. The FED includes a substrate; a plurality of under-gate electrodes formed parallel to one another on a top surface of a substrate; a plurality of cathode electrodes formed perpendicular to the under-gate electrodes on an upper portion of the under-gate electrode, each of cathode holes being formed in portions of the cathode electrodes that intersect with the under-gate electrodes; a plurality of emitters formed symmetrical with respect to centers of the cathode holes on the cathode electrodes; and a plurality of gate electrodes formed to be electrically connected to the under-gate electrodes in central portions of the cathode holes.

    Abstract translation: 提供场发射显示（FED）和制造FED的方法。 FED包括底物; 在基板的上表面上彼此平行地形成的多个下栅极电极; 多个阴极，其在所述栅极下电极的上部垂直于所述栅极下电极形成，每个阴极孔形成在所述阴极电极的与所述栅极下电极相交的部分; 多个发射体相对于阴极电极上的阴极孔的中心对称地形成; 以及形成为与阴极孔的中央部的栅极下电极电连接的多个栅电极。

    METHOD OF GROWING CARBON NANOTUBES AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME
    18.
    发明申请
    METHOD OF GROWING CARBON NANOTUBES AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME 失效
    碳纳米管的制造方法和使用该方法制造场致发射装置的方法

    公开(公告)号：US20080311818A1

    公开(公告)日：2008-12-18

    申请号：US11476653

    申请日：2006-06-29

    Applicant: Ha-Jin Kim ,  In-Taek Han

    Inventor： Ha-Jin Kim ,  In-Taek Han

    IPC: H01J9/00

    CPC classification number: H01J1/304 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/876

    Abstract: Methods of growing carbon nanotubes and manufacturing a field emission device using the carbon nanotubes are provided. The method of growing carbon nanotubes includes the steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote the growing of the carbon nanotubes, forming an amorphous carbon layer on the catalyst metal layer where the amorphous carbon layer partially covers the catalyst metal layer, and growing the carbon nanotubes from a surface of the catalyst metal layer. The carbon nanotubes are grown in a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer. In the method of growing carbon nanotubes, the carbon nanotubes are grow at a low temperature. A density of carbon nanotubes can be controlled to improve field emission characteristics of an emitter of a field emission device.

    Abstract translation: 提供生长碳纳米管的方法和制造使用碳纳米管的场致发射器件。 生长碳纳米管的方法包括以下步骤：制备衬底，在衬底上形成催化剂金属层以促进碳纳米管的生长，在催化剂金属层上形成无定形碳层，其中无定形碳层部分覆盖催化剂 金属层，并从催化剂金属层的表面生长碳纳米管。 碳纳米管生长在未被无定形碳层覆盖的催化剂金属层表面的一部分中。 在生长碳纳米管的方法中，碳纳米管在低温下生长。 可以控制碳纳米管的密度以改善场致发射器件的发射极的场发射特性。

    Vertical interconnection structure including carbon nanotubes and method of fabricating the same
    19.
    发明申请
    Vertical interconnection structure including carbon nanotubes and method of fabricating the same 审中-公开
    包括碳纳米管的垂直互连结构及其制造方法

    公开(公告)号：US20070096616A1

    公开(公告)日：2007-05-03

    申请号：US11544918

    申请日：2006-10-10

    Applicant: In-Taek Han ,  Ha-Jin Kim ,  Sun-Woo Lee

    Inventor： In-Taek Han ,  Ha-Jin Kim ,  Sun-Woo Lee

    IPC: H01J1/02

    CPC classification number: H01L21/76879 ,  H01L21/76852 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided are a vertical interconnection structure including carbon nanotubes and a method of fabricating the same. The vertical interconnection structure includes a substrate; a lower electrode formed on the substrate; a catalyst layer formed on the lower electrode; an inactivated catalyst layer covering the lower electrode and having a first hole exposing the catalyst layer; an insulating layer which is formed on the inert catalyst layer and has a second hole connected to the first hole; a plurality of carbon nanotubes grown from an exposed area of the catalyst layer by the first hole; an upper electrode on the insulating layer being electrically connected to the carbon nanotubes, the inactivated catalyst layer is formed through a thermal reaction between the catalyst layer covering the lower electrode except for the catalyst layer in the first hole and a passivation layer having a third hole corresponding to the second hole.

    Abstract translation: 提供了包括碳纳米管的垂直互连结构及其制造方法。 垂直互连结构包括基板; 形成在所述基板上的下电极; 形成在下电极上的催化剂层; 钝化催化剂层，其覆盖所述下电极并具有暴露所述催化剂层的第一孔; 绝缘层，其形成在所述惰性催化剂层上并且具有连接到所述第一孔的第二孔; 由所述第一孔从所述催化剂层的暴露区域生长的多个碳纳米管; 绝缘层上的上电极与碳纳米管电连接，除了第一孔中的催化剂层之外的覆盖下电极的催化剂层和具有第三孔的钝化层之间的热反应形成失活的催化剂层 对应于第二个孔。

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