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公开(公告)号：US20100087021A1
公开(公告)日：2010-04-08
申请号：US12489451
申请日：2009-06-23
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/1255 , H01L27/1288
摘要： A method of fabricating a pixel structure includes first forming a first, a second, and a third dielectric layers over an active device and a substrate. Etching rates of the first and the third dielectric layers are lower than an etching rate of the second dielectric layer. A contact opening exposing a portion of the active device is formed in the third, the second, and the first dielectric layers. The third and the second dielectric layers are patterned to form a number of stacked structures. An electrode material layer is formed and fills the contact opening. The electrode material layer located on the stacked structures and the electrode material layer located on the first dielectric layer are separated. The stacked structures and the electrode material layer thereon are simultaneously removed to define a pixel electrode and to form at least an alignment slit in the pixel electrode.
摘要翻译： 制造像素结构的方法包括首先在有源器件和衬底上形成第一，第二和第三电介质层。 第一和第三介电层的蚀刻速率低于第二介电层的蚀刻速率。 在第三，第二和第一电介质层中形成暴露有源器件的一部分的接触开口。 图案化第三和第二介电层以形成多个层叠结构。 形成电极材料层并填充接触开口。 位于堆叠结构上的电极材料层和位于第一介电层上的电极材料层被分离。 同时去除其上的层叠结构和电极材料层以限定像素电极并且在像素电极中形成至少一个对准狭缝。
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公开(公告)号：US20100055853A1
公开(公告)日：2010-03-04
申请号：US12617712
申请日：2009-11-12
申请人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
发明人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
IPC分类号： H01L21/336
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
摘要翻译： 提供了一种用于制造像素结构的方法。 栅极和栅极绝缘层依次形成在基板上。 半导体层和第二金属层依次形成在栅极绝缘层上。 通过使用形成在其上的图案化光致抗蚀剂层，将半导体层和第二金属层图案化以形成沟道层，源极和漏极，其中源极和漏极设置在沟道层的一部分上。 栅极，沟道，源极和漏极形成薄膜晶体管。 在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。 然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。 在图案化的钝化层和漏极上形成像素电极。
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公开(公告)号：US20090148972A1
公开(公告)日：2009-06-11
申请号：US12105279
申请日：2008-04-18
申请人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
发明人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1255 , H01L27/1288
摘要： A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.
摘要翻译： 一种用于制造像素结构的方法包括以下步骤。 首先，提供基板。 接下来，在基板上形成第一导电层。 接下来，在第一导电层上设置第一荫罩。 接下来，通过第一荫罩施加激光以照射第一导电层以形成栅极。 接下来，在基板上形成栅电介质层以覆盖栅极。 之后，沟道层，源极和漏极同时形成在栅极上的栅极电介质层上，其中栅极，沟道层，源极和漏极一起形成薄膜晶体管。 图案化的钝化层形成在薄膜晶体管上，并且图案化的钝化层露出一部分漏极。 此外，形成电连接到漏极的像素电极。
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公开(公告)号：US20090087954A1
公开(公告)日：2009-04-02
申请号：US12017342
申请日：2008-01-22
申请人： Han-Tu Lin , Chih-Chun Yang , Ming-Yuan Huang , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
发明人： Han-Tu Lin , Chih-Chun Yang , Ming-Yuan Huang , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/14692 , H01L27/124 , H01L27/1288
摘要： A method for fabricating a pixel structure using a laser ablation process is provided. This fabrication method forms a gate, a channel layer, a source, a drain, a passivation layer, and a pixel electrode sequentially by using a laser ablation process. Particularly, the fabrication method is not similar to a photolithography and etching process, so as to reduce the complicated photolithography and etching processes, such as spin coating process, soft-bake, hard-bake, exposure, developing, etching, and stripping. Therefore, the fabrication method simplifies the process and thus reduces the fabrication cost.
摘要翻译： 提供了一种使用激光烧蚀工艺制造像素结构的方法。 该制造方法通过使用激光烧蚀工艺依次形成栅极，沟道层，源极，漏极，钝化层和像素电极。 特别地，制造方法与光刻和蚀刻工艺不同，从而减少旋涂，软烘烤，硬烘烤，曝光，显影，蚀刻和剥离等复杂的光刻和蚀刻工艺。 因此，制造方法简化了工艺，从而降低了制造成本。
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公开(公告)号：US07816159B2
公开(公告)日：2010-10-19
申请号：US12105279
申请日：2008-04-18
申请人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
发明人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1255 , H01L27/1288
摘要： A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.
摘要翻译： 一种用于制造像素结构的方法包括以下步骤。 首先，提供基板。 接下来，在基板上形成第一导电层。 接下来，在第一导电层上设置第一荫罩。 接下来，通过第一荫罩施加激光以照射第一导电层以形成栅极。 接下来，在基板上形成栅电介质层以覆盖栅极。 之后，沟道层，源极和漏极同时形成在栅极上的栅极电介质层上，其中栅极，沟道层，源极和漏极一起形成薄膜晶体管。 图案化的钝化层形成在薄膜晶体管上，并且图案化的钝化层露出一部分漏极。 此外，形成电连接到漏极的像素电极。
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公开(公告)号：US07811867B2
公开(公告)日：2010-10-12
申请号：US12617712
申请日：2009-11-12
申请人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang
发明人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
摘要翻译： 提供了一种用于制造像素结构的方法。 栅极和栅极绝缘层依次形成在基板上。 半导体层和第二金属层依次形成在栅极绝缘层上。 通过使用形成在其上的图案化光致抗蚀剂层，将半导体层和第二金属层图案化以形成沟道层，源极和漏极，其中源极和漏极设置在沟道层的一部分上。 栅极，沟道，源极和漏极形成薄膜晶体管。 在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。 然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。 在图案化的钝化层和漏极上形成像素电极。
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公开(公告)号：US20100084660A1
公开(公告)日：2010-04-08
申请号：US12633975
申请日：2009-12-09
申请人： Kuo-Lung Fang , Chih-Chun Yang , Han-Tu Lin
发明人： Kuo-Lung Fang , Chih-Chun Yang , Han-Tu Lin
IPC分类号： H01L27/06 , H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124
摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed thereon, an insulation layer disposed on the substrate and overlying the gate, a patterned semiconductor layer disposed on the insulation layer, a source and a drain disposed on the patterned semiconductor layer, a protective layer overlying the insulation layer, the source and the boundary of the drain to expose a portion of the drain, and a pixel electrode disposed on the substrate, overlying the protective layer overlying the boundary of the drain, electrically connected to the exposed drain.
摘要翻译： 提供半导体结构。 半导体结构包括衬底，设置在其上的栅极，设置在衬底上并覆盖栅极的绝缘层，设置在绝缘层上的图案化半导体层，设置在图案化半导体层上的源极和漏极，保护层覆盖 所述绝缘层，所述漏极的源极和边界以暴露所述漏极的一部分，以及设置在所述衬底上的像素电极，覆盖所述保护层，所述保护层覆盖所述漏极的边界，电连接到所述暴露的漏极。
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公开(公告)号：US07648865B1
公开(公告)日：2010-01-19
申请号：US12233607
申请日：2008-09-19
申请人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
发明人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a pixel structure is provided. First, a gate and a gate insulating layer are sequentially formed on the substrate. A channel layer and a second metal layer are sequentially formed on the gate insulating layer. The second metal layer is patterned to form a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and the drain are disposed on a portion of the channel layer. The gate, the channel, the source and the drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
摘要翻译： 提供了一种用于制造像素结构的方法。 首先，在基板上依次形成栅极和栅极绝缘层。 沟道层和第二金属层依次形成在栅极绝缘层上。 图案化第二金属层以通过使用其上形成的图案化光致抗蚀剂层来形成源极和漏极，其中源极和漏极设置在沟道层的一部分上。 栅极，沟道，源极和漏极形成薄膜晶体管。 在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。 然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。 在图案化的钝化层和漏极上形成像素电极。
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公开(公告)号：US20090325331A1
公开(公告)日：2009-12-31
申请号：US12233607
申请日：2008-09-19
申请人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
发明人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a pixel structure is provided. First, a gate and a gate insulating layer are sequentially formed on the substrate. A channel layer and a second metal layer are sequentially formed on the gate insulating layer. The second metal layer is patterned to form a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and the drain are disposed on a portion of the channel layer. The gate, the channel, the source and the drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
摘要翻译： 提供了一种用于制造像素结构的方法。 首先，在基板上依次形成栅极和栅极绝缘层。 沟道层和第二金属层依次形成在栅极绝缘层上。 图案化第二金属层以通过使用其上形成的图案化光致抗蚀剂层来形成源极和漏极，其中源极和漏极设置在沟道层的一部分上。 栅极，沟道，源极和漏极形成薄膜晶体管。 在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。 然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。 在图案化的钝化层和漏极上形成像素电极。
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公开(公告)号：US08431929B2
公开(公告)日：2013-04-30
申请号：US12633975
申请日：2009-12-09
申请人： Kuo-Lung Fang , Chih-Chun Yang , Han-Tu Lin
发明人： Kuo-Lung Fang , Chih-Chun Yang , Han-Tu Lin
IPC分类号： H01L29/40 , H01L31/036 , H01L31/062 , H01L27/01 , H01L27/12
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124
摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed thereon, an insulation layer disposed on the substrate and overlying the gate, a patterned semiconductor layer disposed on the insulation layer, a source and a drain disposed on the patterned semiconductor layer, a protective layer overlying the insulation layer, the source and the boundary of the drain to expose a portion of the drain, and a pixel electrode disposed on the substrate, overlying the protective layer overlying the boundary of the drain, electrically connected to the exposed drain.
摘要翻译： 提供半导体结构。 半导体结构包括衬底，设置在其上的栅极，设置在衬底上并覆盖栅极的绝缘层，设置在绝缘层上的图案化半导体层，设置在图案化半导体层上的源极和漏极，保护层覆盖 所述绝缘层，所述漏极的源极和边界以暴露所述漏极的一部分，以及设置在所述衬底上的像素电极，覆盖所述保护层，所述保护层覆盖所述漏极的边界，电连接到所述暴露的漏极。
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