公开(公告)号：US08632634B2

公开(公告)日：2014-01-21

申请号：US12508012

申请日：2009-07-23

申请人： Yoshikazu Moriyama ,  Kunihiko Suzuki ,  Hironobu Hirata

发明人： Yoshikazu Moriyama ,  Kunihiko Suzuki ,  Hironobu Hirata

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45572 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/46 ,  C30B25/14 ,  C30B29/06

摘要： In a coating apparatus, a distributor plate 104 is disposed upstream of a silicon wafer 101 relative to the direction of flow of reactive gas. The distributor plate 104 has therein first through-holes 104a and second through-holes 104b arranged so as not to meet the first through-holes 104a. The reactive gas passes through the first through-holes 104a and flows down toward the silicon wafer 101. Further, a cooling gas passes through the second through-holes 104b.

摘要翻译： 在涂布装置中，分配器板104相对于反应气体的流动方向设置在硅晶片101的上游。 分配板104在其中具有布置成不与第一通孔104a相交的第一通孔104a和第二通孔104b。 反应气体通过第一通孔104a并朝向硅晶片101向下流动。此外，冷却气体通过第二通孔104b。

公开(公告)号：US08460470B2

公开(公告)日：2013-06-11

申请号：US13297483

申请日：2011-11-16

申请人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/10 ,  C30B29/06 ,  C30B35/00

摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

摘要翻译： 气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接 所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离 并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

公开(公告)号：US20110120366A1

公开(公告)日：2011-05-26

申请号：US12949326

申请日：2010-11-18

申请人： Shinya HIGASHI ,  Hironobu Hirata

发明人： Shinya HIGASHI ,  Hironobu Hirata

IPC分类号： C30B25/12

CPC分类号： C30B25/12 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68785

摘要： An outer peripheral portion of the silicon wafer is supported by the first susceptor part. The second susceptor part is a close fit in the opening of the first susceptor part to support a portion other than the outer peripheral portion of the silicon wafer. The second susceptor part comes into contact with the outer peripheral portion of the first susceptor part and is disposed in such a manner that a clearance having a predetermined size is formed between the first susceptor part and the second susceptor part and between the opening and the outer peripheral portion thereof. A gas exiting the clearance, which was expanded by heating, is expelled into the chamber via through holes.

摘要翻译： 硅晶片的外周部分由第一感受器部分支撑。 第二感受器部分紧密地配合在第一感受器部分的开口中以支撑硅晶片的外周部分以外的部分。 第二感受器部分与第一基座部分的外周部分接触并且以这样的方式设置，使得在第一基座部分和第二基座部分之间以及开口与外部之间形成具有预定尺寸的间隙 其周边部分。 离开通过加热而膨胀的间隙的气体经由通孔被排出到室中。

公开(公告)号：US20120291697A1

公开(公告)日：2012-11-22

申请号：US13473275

申请日：2012-05-16

申请人： Kunihiko Suzuki ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hironobu Hirata

IPC分类号： C30B25/10 ,  C30B25/12

CPC分类号： C30B25/10 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/12

摘要： An apparatus for manufacturing a semiconductor device includes an out-heater including a heater element formed in an annular shape with a disconnected portion at one place, a first electrode component connected to a first heater electrode part of the heater element, a second electrode component connected to a second heater electrode part of the heater element, and a base including a first groove in which the first electrode component is fixedly disposed, and a second groove in which the second electrode component is movably disposed and a groove width in a circumferential direction of the heater element is formed such that a width of a second gap formed between a side of the second electrode component and an inner wall of the groove is wider than a width of a first gap formed between a side of the first electrode component and an inner wall of the first groove.

摘要翻译： 一种用于制造半导体器件的装置，包括：外加热器，包括形成为环状的加热元件，其一端具有断开部分，第一电极部件连接到加热器元件的第一加热电极部分，第二电极部件连接 到第一加热元件的第二加热电极部分，以及包括第一电极部分固定地设置的第一槽和第二电极部分可移动地设置的第二槽和沿圆周方向的槽宽度的基座 加热器元件形成为使得形成在第二电极部件的侧面和槽的内壁之间的第二间隙的宽度比形成在第一电极部件的侧面和内部部分的内部的第一间隙的宽度宽 第一槽的墙。

公开(公告)号：US08257499B2

公开(公告)日：2012-09-04

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber, a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

公开(公告)号：US20110171380A1

公开(公告)日：2011-07-14

申请号：US12828963

申请日：2010-07-01

申请人： Shinya HIGASHI ,  Hironobu Hirata

发明人： Shinya HIGASHI ,  Hironobu Hirata

IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/00

CPC分类号： H01L21/68785 ,  C23C16/4586 ,  H01L21/68735

摘要： In accordance with the embodiment of the present invention, there is provided a susceptor which includes an annular first susceptor portion for supporting the peripheral portion of a silicon wafer and further includes a second susceptor portion provided in contact with the peripheral portion of the first susceptor portion and covering the opening of the first susceptor portion. The second susceptor portion is disposed so that, when the silicon wafer is supported on the first susceptor portion, a gap of a predetermined size is formed between the silicon wafer and the second susceptor portion, and so that another gap of a size substantially equal to the predetermined size and directly connected to the above gap is formed between the first susceptor portion and the second susceptor portion.

摘要翻译： 根据本发明的实施例，提供了一种基座，其包括用于支撑硅晶片的周边部分的环形第一基座部分，并且还包括设置成与第一基座部分的周边部分接触的第二基座部分 并且覆盖第一感受器部分的开口。 第二感受体部分被设置成使得当硅晶片被支撑在第一基座部分上时，在硅晶片和第二基座部分之间形成预定尺寸的间隙，并且使得尺寸基本等于 在第一基座部分和第二基座部分之间形成直接连接到上述间隙的预定尺寸。

公开(公告)号：US09090990B2

公开(公告)日：2015-07-28

申请号：US13473275

申请日：2012-05-16

申请人： Kunihiko Suzuki ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hironobu Hirata

IPC分类号： C30B25/10 ,  C30B25/12 ,  C23C16/458 ,  C23C16/46

CPC分类号： C30B25/10 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/12

摘要： An apparatus for manufacturing a semiconductor device includes an out-heater including a heater element formed in an annular shape with a disconnected portion at one place, a first electrode component connected to a first heater electrode part of the heater element, a second electrode component connected to a second heater electrode part of the heater element, and a base including a first groove in which the first electrode component is fixedly disposed, and a second groove in which the second electrode component is movably disposed and a groove width in a circumferential direction of the heater element is formed such that a width of a second gap formed between a side of the second electrode component and an inner wall of the groove is wider than a width of a first gap formed between a side of the first electrode component and an inner wall of the first groove.

摘要翻译： 一种用于制造半导体器件的装置，包括：外加热器，包括形成为环状的加热元件，其一端具有断开部分，第一电极部件连接到加热器元件的第一加热电极部分，第二电极部件连接 到第一加热元件的第二加热电极部分，以及包括第一电极部分固定地设置的第一槽和第二电极部分可移动地设置的第二槽和沿圆周方向的槽宽度的基座 加热器元件形成为使得形成在第二电极部件的侧面和槽的内壁之间的第二间隙的宽度比形成在第一电极部件的侧面和内部部分的内部的第一间隙的宽度宽 第一槽的墙。

公开(公告)号：US08597429B2

公开(公告)日：2013-12-03

申请号：US13350102

申请日：2012-01-13

申请人： Kunihiko Suzuki ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hironobu Hirata

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： C23C16/4401 ,  C23C16/24 ,  C23C16/4412

摘要： Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.

摘要翻译： 提供一种半导体制造装置，包括：反应室，包括气体供给入口和排气出口，并且其中将引入晶片; 处理气体供给机构，其从所述反应室的气体供给口向所述反应室供给处理气体; 晶片保持构件，其布置在所述反应室中并保持所述晶片; 将由晶片保持构件保持的晶片加热到预定温度的加热器; 旋转驱动控制机构，其使晶片保持构件与晶片一起旋转; 气体排出机构，其从反应室的排气口排出反应室中的气体; 以及设置在反应室内的壁面附近的底部并排出从壁面滴下的油性硅烷的排水管。

公开(公告)号：US20120055406A1

公开(公告)日：2012-03-08

申请号：US13297483

申请日：2011-11-16

申请人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

IPC分类号： C23C16/458

CPC分类号： C23C16/481 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/10 ,  C30B29/06 ,  C30B35/00

摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

摘要翻译： 气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接 所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离 并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

公开(公告)号：US20070204796A1

公开(公告)日：2007-09-06

申请号：US11706971

申请日：2007-02-16

申请人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/10 ,  C30B29/06 ,  C30B35/00

摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

摘要翻译： 气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接 所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离 并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。