公开(公告)号：US20120135602A1

公开(公告)日：2012-05-31

申请号：US13388626

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Keisuke Araki

IPC: H01L21/302

CPC classification number: B23K26/55 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0853 ,  B23K2101/40 ,  B23K2103/56 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region, an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object, and a functional device forming step of forming a functional device on one main face side of the object.

Abstract translation: 一种制造具有冷却机构的半导体器件的方法包括：将由激光制成的待加工的片状物体的激光聚光的改质区域形成工序，以在该物体内沿着线形成修饰区域，形成 修改区域，在改质区域形成工序后各向异性蚀刻物体的蚀刻步骤，以沿着第一改质区域选择性地进行蚀刻，并形成用于使作为冷却机构的冷却剂循环在物体内的流路，以及功能元件 在物体的一个主面侧形成功能元件的形成工序。

公开(公告)号：US20120129359A1

公开(公告)日：2012-05-24

申请号：US13388716

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Keisuke Araki

IPC: H01L21/268

CPC classification number: H01L21/30608 ,  B23K26/0006 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/486 ,  H01L23/49827

Abstract: A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step, wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object, and wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness.

Abstract translation: 一种激光加工方法，其特征在于，包括：激光收敛步骤，使激光在由硅制成的待加工的片状物体上会聚，以在物体内形成改质区域;以及蚀刻工序，对所述物体进行各向异性蚀刻， 将物体变薄到目标厚度，并且沿着改质区域选择性地推进蚀刻，以便在激光聚光步骤之后形成具有相对于物体的厚度方向倾斜的通孔的物体，其中激光聚光步骤形成 作为与物体中的通孔对应的部分中的改质区域的第一改质区域和作为改变区域的第二改质区域，其平行于厚度方向延伸，并且在变薄的部分中与第一改质区域连接， 该物体中的各向异性蚀刻，并且其中蚀刻步骤沿着第二改质区选择性地前进蚀刻，然后沿着该fi 第一修改区域，同时使物体变薄，并在物体处于目标厚度时完成形成通孔。

公开(公告)号：US08828260B2

公开(公告)日：2014-09-09

申请号：US13389287

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Keisuke Araki

IPC: B44C1/22 ,  B23K26/00 ,  B23K26/38 ,  B23K26/40 ,  B23K26/06 ,  H01L21/306 ,  B23K26/073 ,  H01L21/768

CPC classification number: B23K26/40 ,  B23K26/0006 ,  B23K26/064 ,  B23K26/0736 ,  B23K26/382 ,  B23K26/384 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/30608 ,  H01L21/76898

Abstract: A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and produce a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of 45° or greater therebetween, and the modified spots are made align in one row along the line.

Abstract translation: 在硅衬底中形成沿着预定线延伸的空间的衬底处理方法包括：在衬底处会聚具有除了1以外的椭圆率的椭圆偏振光的激光的第一步骤，以形成多个经修改的 沿着该线的衬底内的斑点，并产生包括改性斑点的改性区域;以及第二步骤，各向异性蚀刻衬底，以沿着改质区域选择性地进行刻蚀，并形成衬底中的空间。 在第一步骤中，光在基板处会聚，使得光相对于基板的移动方向和光的偏振方向在其间形成45°或更大的角度，并且将修改的光点对准 沿着一行。

公开(公告)号：US08685269B2

公开(公告)日：2014-04-01

申请号：US13388717

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Keisuke Araki

IPC: B44C1/22

CPC classification number: H01L21/30608 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2101/35 ,  B23K2103/50 ,  H01L21/30604 ,  H01L21/486

Abstract: A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging the laser light at the object so as to form the modified region along a part corresponding to the through hole in the object; an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object after the laser light converging step; and an etching step of etching the object so as to advance the etching selectively along the modified region and form the through hole after the etch resist film producing step; while the laser light converging step exposes the modified region to the outer surface of the object.

Abstract translation: 一种激光加工方法，其将激光会聚到由硅制成的被处理物体中以形成改质区域，并沿着改质区域蚀刻物体以形成具有通孔的物体，其包括：会聚的激光聚光步骤 激光在物体上沿着与物体中的通孔对应的部分形成改质区域; 蚀刻抗蚀剂膜制造步骤，在激光聚光步骤之后产生耐蚀刻物体的外表面上的蚀刻抗蚀剂膜; 以及蚀刻步骤，用于蚀刻所述物体，以便沿着所述改质区域选择性地推进所述蚀刻，并且在所述抗蚀剂膜制造步骤之后形成所述通孔; 而激光聚光步骤将修饰区域暴露于物体的外表面。

公开(公告)号：US08673167B2

公开(公告)日：2014-03-18

申请号：US13361079

申请日：2012-01-30

Applicant: Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01L23/481 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2103/50 ,  B81B2203/0353 ,  B81B2203/0384 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/30608 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.

Abstract translation: 在由硅制成的待加工的片状物体中形成孔的激光加工方法包括凹陷形成步骤，在与物体的激光入射面侧的孔对应的部分形成凹部，凹部开口 到激光入射面; 改变区域形成步骤，通过在所述凹陷形成步骤之后会聚所述物体上的激光，沿着与所述物体中的所述孔相对应的部分形成改质区域; 以及在改质区域形成工序后对物体进行各向异性蚀刻的蚀刻工序，以沿着改质区域选择性地进行蚀刻，并在物体上形成孔; 其中所述改性区域形成步骤将所述改性区域或从所述改质区域延伸的断裂暴露于所述凹陷的内表面。

公开(公告)号：US20120299219A1

公开(公告)日：2012-11-29

申请号：US13389676

申请日：2011-05-27

Applicant: Hideki Shimoi ,  Keisuke Araki ,  Naoki Uchiyama

Inventor： Hideki Shimoi ,  Keisuke Araki ,  Naoki Uchiyama

IPC: B29C35/08

CPC classification number: H01L21/30604 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03C15/00 ,  C03C23/0025 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617

Abstract: The present invention provides a laser processing method which improves strength and quality of an object to be processed after working. In the present embodiment, after modified regions 7 are formed along the outlines of hollowed-out portions Q1 and Q2 in the object 1 by irradiating the object 1 with a laser light, etching is performed onto the object 1 to selectively advance etching along a fracture which is contained in the modified regions 7 or extend from the modified regions 7, and the hollowed-out portions Q1 and Q2 are spaced and moved from the object 1. Here, the modified regions 7 are formed so as to connect to each other along the outlines of the hollowed-out portions Q1 and Q2, and further exposed on a surface 3 side of the object 1. In this way, in the present embodiment, it is possible to perform working so as to hollow out the hollowed-out portions Q1 and Q2 from the object 1 without applying external stress, and it is possible to remove the fracture generated according to the formation of the modified regions 7 by etching.

Abstract translation: 本发明提供一种提高加工后的被处理物的强度和质量的激光加工方法。 在本实施方式中，通过用激光照射物体1，沿着物体1的中空部分Q1和Q2的轮廓形成改性区域7之后，对物体1进行蚀刻以选择性地进行沿断裂的蚀刻 其被包含在改质区域7中或者从改质区域7延伸出来，并且中空部分Q1和Q2从物体1间隔开并移动。这里，改性区域7形成为沿着彼此连接 中空部分Q1和Q2的轮廓，并且进一步暴露在物体1的表面3侧上。以这种方式，在本实施例中，可以进行加工，以便将中空部分 Q1和Q2，而不施加外部应力，并且可以通过蚀刻去除根据改质区域7的形成产生的断裂。

公开(公告)号：US20120135608A1

公开(公告)日：2012-05-31

申请号：US13389288

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Keisuke Araki

IPC: H01L21/306

CPC classification number: B23K26/064 ,  B23K26/0006 ,  B23K26/0736 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/30608 ,  H01L21/76898

Abstract: A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and construct a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of less than 45° therebetween, and the modified spots are made align in a plurality of rows along the line.

Abstract translation: 在硅衬底中形成沿着预定线延伸的空间的衬底处理方法包括：在衬底处会聚具有除了1以外的椭圆率的椭圆偏振光的激光的第一步骤，以形成多个经修改的 并且构建包含修饰斑点的改性区域，以及第二步骤，各向异性地蚀刻衬底，以沿着改质区域选择性地进行刻蚀，并形成衬底中的空间。 在第一步骤中，光在基板处会聚，使得光相对于基板的移动方向和光的偏振方向在其间形成小于45°的角度，并且将修改的光点对准 沿着线的多行。

公开(公告)号：US20120125893A1

公开(公告)日：2012-05-24

申请号：US13388597

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

IPC: B44C1/22 ,  H01L21/306

CPC classification number: H01L23/147 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/30608 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/49827

Abstract: In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.

Abstract translation: 在包括修改区域形成步骤的方法中，所述修改区域形成步骤将激光会聚在由硅制成的待加工的片状物体上，以沿着沿第一横向方向倾斜的改质区域形成线在物体内形成多个改质点 相对于物体的厚度方向，并且所述多个改质点构成改质区域，以及在所述改质区域形成工序之后对所述物体进行各向异性蚀刻的蚀刻工序，以沿着所述改质区域选择性地进行蚀刻，并形成所述物体 具有相对于厚度方向倾斜延伸的空间，所述改质区域形成步骤形成所述多个改质点，使得当在所述第一横向方向上观察时，彼此相邻的所述改性斑点彼此至少部分重叠。

公开(公告)号：US20120125887A1

公开(公告)日：2012-05-24

申请号：US13388595

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Keisuke Araki

IPC: B44C1/22

CPC classification number: B23K26/355 ,  B23K26/361 ,  H01L31/02363 ,  Y02E10/50

Abstract: A method for manufacturing a light-absorbing substrate having a surface with depressions and projections comprises a first step of irradiating a substrate with a laser light so as to form a plurality of modified regions arranged two-dimensionally along a surface of the substrate within the substrate and cause at least one of each modified region and a fracture generated from the modified region to reach the surface of the substrate and a second step of etching the surface of the substrate after the first step so as to form depressions and projections on the surface of the substrate.

Abstract translation: 一种具有凹凸表面的光吸收基板的制造方法，其特征在于，包括：第一工序，用激光照射基板，形成沿着基板的基板表面二维配置的多个改质区域 并且使得每个改性区域中的至少一个和从所述改性区域产生的断裂到达所述基板的表面;以及第二步骤，在所述第一步骤之后蚀刻所述基板的表面，以在所述第一步骤的表面上形成凹陷和突起 底物。

公开(公告)号：US08802544B2

公开(公告)日：2014-08-12

申请号：US13389053

申请日：2011-07-19

Applicant: Hideki Shimoi ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Keisuke Araki

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L21/7806

Abstract: A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps so as to cut out a part of the object and form the substrate.

Abstract translation: 由形成在基板上的功能元件构成的芯片的制造方法包括功能元件形成步骤，在由硅制成的被加工片状物体的一个主面上形成功能元件; 第一改质区域形成步骤，使激光在物体处会聚，以便沿着与该基板的厚度对应的预定深度从该主面形成沿物体的一个主面的第一改质区域; 第二改质区域形成步骤，将激光会聚在物体上，以形成第二改质区域，该第二改质区域从物体的一个主面侧的一个主面看，对应于基板的侧缘延伸 使得所述第二改质区域沿着所述物体的厚度方向与所述第一改质区域连接; 以及蚀刻步骤，在第一和第二改质区域形成步骤之后沿着第一和第二改质区选择性地进行蚀刻，以便切割出物体的一部分并形成衬底。