利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

133 records (took 0.014 seconds)

    WAFER THINNING METHOD
    1.
    发明公开
    WAFER THINNING METHOD 审中-公开

    公开(公告)号：US20240326175A1

    公开(公告)日：2024-10-03

    申请号：US18609222

    申请日：2024-03-19

    Applicant: DISCO CORPORATION

    Inventor： Asahi NOMOTO

    IPC: B23K26/55

    CPC classification number: B23K26/55

    Abstract: A wafer thinning method for a wafer includes bonding a first support substrate to a first surface of the wafer, positioning a focused spot of a laser beam with a wavelength transmittable through the wafer from a second surface side of the wafer inside the wafer, and applying the laser beam while moving the focused spot and the wafer relative to each other in a direction parallel to the second surface, thereby forming separation start points each including a modified layer parallel to the second surface and cracks extending from the modified layer, applying an ultrasonic wave to the wafer from the second surface side of the wafer, bonding a second support substrate to the second surface of the wafer, and separating the wafer at the separation start points into a first wafer having the first surface and a second wafer having the second surface, thereby thinning the wafer.

    Systems for removing lubricants from superplastic-forming or hot-forming dies
    6.
    发明授权
    Systems for removing lubricants from superplastic-forming or hot-forming dies 有权
    用于从超塑性成型或热成型模具中除去润滑剂的系统

    公开(公告)号：US09381548B2

    公开(公告)日：2016-07-05

    申请号：US15018343

    申请日：2016-02-08

    Applicant: The Boeing Company

    Inventor： Marc James Petersen ,  Larry Dean Hefti ,  Gregory L. Ramsey

    IPC: B08B7/00 ,  B23K26/00 ,  B23K26/36 ,  H01J49/04

    CPC classification number: B08B7/0042 ,  B08B7/00 ,  B08B7/0035 ,  B08B7/005 ,  B08B7/0057 ,  B23K26/36 ,  B23K26/362 ,  B23K26/55 ,  H01J49/0418

    Abstract: A method of cleaning a die having an oxide layer is provided. The method includes discharging electromagnetic energy towards a working surface of the die having a layer of at least one of graphite and boron nitride thereon. The electromagnetic energy is discharged at a power output between about 6 kW and about 15 kW such that the layer of at least one of graphite and boron nitride is ablated, and such that the layer is removed without removing an oxide layer between the surface of the die and the layer.

    Abstract translation: 提供一种清洗具有氧化物层的管芯的方法。 该方法包括向其上具有至少一个石墨和氮化硼的层的模具的工作表面放电电磁能。 电磁能量以约6kW至约15kW之间的功率输出放电，使得石墨和氮化硼中的至少一种的层被消融，并且使得该层被去除而不除去氧化物层的表面之间的氧化物层 死和层。

    Substrate processing method
    8.
    发明授权
    Substrate processing method 有权
    基板加工方法

    公开(公告)号：US08741777B2

    公开(公告)日：2014-06-03

    申请号：US13389288

    申请日：2011-07-19

    Applicant: Hideki Shimoi ,  Keisuke Araki

    Inventor： Hideki Shimoi ,  Keisuke Araki

    IPC: H01L21/302

    CPC classification number: B23K26/064 ,  B23K26/0006 ,  B23K26/0736 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/30608 ,  H01L21/76898

    Abstract: A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and construct a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of less than 45° therebetween, and the modified spots are made align in a plurality of rows along the line.

    Abstract translation: 在硅衬底中形成沿着预定线延伸的空间的衬底处理方法包括：在衬底处会聚具有除了1以外的椭圆率的椭圆偏振光的激光的第一步骤，以形成多个经修改的 并且构建包含修饰斑点的改性区域，以及第二步骤，各向异性地蚀刻衬底，以沿着改质区域选择性地进行刻蚀，并形成衬底中的空间。 在第一步骤中，光在基板处会聚，使得光相对于基板的移动方向和光的偏振方向在其间形成小于45°的角度，并且将修改的光点对准 沿着线的多行。

    Laser processing method
    10.
    发明授权
    Laser processing method 有权
    激光加工方法

    公开(公告)号：US08541319B2

    公开(公告)日：2013-09-24

    申请号：US13388716

    申请日：2011-07-19

    Applicant: Hideki Shimoi ,  Keisuke Araki

    Inventor： Hideki Shimoi ,  Keisuke Araki

    IPC: H01L21/268

    CPC classification number: H01L21/30608 ,  B23K26/0006 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/486 ,  H01L23/49827

    Abstract: A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step, wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object, and wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness.

    Abstract translation: 一种激光加工方法，其特征在于，包括：激光收敛步骤，使激光在由硅制成的待加工的片状物体上会聚，以在物体内形成改质区域;以及蚀刻工序，对所述物体进行各向异性蚀刻， 将物体变薄到目标厚度，并且沿着改质区域选择性地推进蚀刻，以便在激光聚光步骤之后形成具有相对于物体的厚度方向倾斜的通孔的物体，其中激光聚光步骤形成 作为与物体中的通孔对应的部分中的改质区域的第一改质区域和作为改变区域的第二改质区域，其平行于厚度方向延伸，并且在变薄的部分中与第一改质区域连接， 该物体中的各向异性蚀刻，并且其中蚀刻步骤沿着第二改质区选择性地前进蚀刻，然后沿着该fi 第一修改区域，同时使物体变薄，并在物体处于目标厚度时完成形成通孔。

Patent Agency Ranking