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42 条记录 (耗时 0.025 秒)

    OXIDE SINTERED BODY AND SPUTTERING TARGET
    14.
    发明申请
    OXIDE SINTERED BODY AND SPUTTERING TARGET 有权
    氧化物烧结体和溅射目标

    公开(公告)号：US20130306469A1

    公开(公告)日：2013-11-21

    申请号：US13981729

    申请日：2012-02-09

    申请人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

    发明人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086

    摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2ν=26.5°.

    摘要翻译： 本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高 。 该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。 当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下式（1）：等式（1）：[A /（A + B + C + D）]×100> = 70。 在式（1）中，A表示2θ= 34°附近的XRD峰强度，B表示2θ= 31°附近的XRD峰强度，C表示2θ= 35°附近的XRD峰强度 ，D表示2nu = 26.5°附近的XRD峰强度。

    Ceramic shape memory element
    17.
    发明授权
    Ceramic shape memory element 失效
    陶瓷形状记忆元件

    公开(公告)号：US4767730A

    公开(公告)日：1988-08-30

    申请号：US910257

    申请日：1986-09-19

    申请人： Takao Soma ,  Minoru Matsui

    发明人： Takao Soma ,  Minoru Matsui

    IPC分类号： C04B35/48 ,  C04B35/486 ,  C04B37/00

    CPC分类号： C04B35/486 ,  C04B35/645 ,  C04B37/001 ,  C04B37/021 ,  C04B2237/32 ,  C04B2237/348 ,  C04B2237/40 ,  C04B2237/765 ,  C04B2237/84

    摘要： Disclosed herein is a ceramic shape memory element containing zirconia. A ceramic article is also disclosed which contains at least one of tetragonal zirconia and monoclinic zirconia, and is subjected to plastic deformation through phase transformation caused by maintaining the article at a given temperature, and/or imposing a given stress thereupon. Methods of processing and joining the ceramic article by utilizing the shape memory phenomenon peculiar to such a ceramic article are also disclosed.

    摘要翻译： 本文公开了含有氧化锆的陶瓷形状记忆元件。 还公开了一种陶瓷制品，其包含四方晶氧化锆和单斜氧化锆中的至少一种，并且通过将制品保持在给定温度下引起的相变和/或施加给定的应力而进行塑性变形。 还公开了通过利用这种陶瓷制品特有的形状记忆现象来加工和接合陶瓷制品的方法。

    Silicon nitride sintered body and manufacturing method thereof
    18.
    发明授权
    Silicon nitride sintered body and manufacturing method thereof 失效
    氮化硅烧结体及其制造方法

    公开(公告)号：US4692419A

    公开(公告)日：1987-09-08

    申请号：US892249

    申请日：1986-08-04

    申请人： Minoru Matsui ,  Takao Soma

    发明人： Minoru Matsui ,  Takao Soma

    IPC分类号： C04B35/584 ,  C04B35/58

    CPC分类号： C04B35/584

    摘要： A silicon nitride sintered body essentially consisting of compounds of Sr, Mg, Ce, Zr and Al in amounts of from 0.1 to 18% by weight when calculated as SrO, from 0.2 to 25% by weight when calculated as MgO, from 0.1 to 20% by weight when calculated as CeO.sub.2, from 0.1 to 15% by weight when calculated as ZrO.sub.2 and from 1 to 20% by weight when calculated as Al.sub.2 O.sub.3, respectively, and the balance being silicon nitride. A method of manufacturing the silicon nitride sintered body is also disclosed. The silicon nitride sintered body has a low thermal conductivity while high mechanical strength and high fracture toughness being maintained.

    摘要翻译： 氮化硅烧结体，当以SrO计算时，主要由Sr，Mg，Ce，Zr和Al的化合物组成，其量为0.1至18重量％，以MgO计为0.2至25重量％，0.1至20 以CeO 2计，当以ZrO 2计算时为0.1〜15重量％，Al 2 O 3计算为1〜20重量％，余量为氮化硅。 还公开了一种制造氮化硅烧结体的方法。 氮化硅烧结体具有低的导热性，同时保持高的机械强度和高的断裂韧性。

    Zirconia porcelain and method of manufacturing the same
    20.
    发明授权
    Zirconia porcelain and method of manufacturing the same 失效
    氧化锆瓷及其制造方法相同

    公开(公告)号：US4610967A

    公开(公告)日：1986-09-09

    申请号：US637797

    申请日：1984-09-06

    申请人： Yuichiro Imanishi ,  Minoru Matsui

    发明人： Yuichiro Imanishi ,  Minoru Matsui

    IPC分类号： C04B35/48 ,  C04B35/486 ,  H01M8/12 ,  C04B35/50

    CPC分类号： H01M8/1253 ,  C04B35/486 ,  Y02E60/525 ,  Y02P70/56

    摘要： Disclosed herein is a zirconia porcelain which includes 1.5-5 mol % of yttrium oxide, 1-5.5 mol % of cerium oxide and the balance being substantially zirconium oxide. Disclosed herein also is a method of producing a zirconia porcelain, which includes the steps of preparing a mixed powder including 1.5-5 mol % of yttrium oxide, 1-5.5 mol % of cerium oxide and the balance being substantially zirconium oxide having an average particle size of less than 1.5 .mu.m when measured according to an air permeation method, shaping the mixed powder into a molding, and firing the molding thus at a temperature of 1,100.degree. C.-1,700.degree. C.

    摘要翻译： 本文公开了一种氧化锆瓷，其包含1.5-5mol％的氧化钇，1-5.5mol％的氧化铈，余量基本上是氧化锆。 本文还公开了一种氧化锆瓷的制造方法，其包括以下步骤：制备包含1.5-5mol％氧化钇，1-5.5mol％氧化铈的混合粉末，余量基本上为氧化锆，其平均颗粒 尺寸小于1.5μm，根据透气法测定，将混合粉末成型成型，在1100℃〜1700℃的温度下烧成。