公开(公告)号：US20130306469A1

公开(公告)日：2013-11-21

申请号：US13981729

申请日：2012-02-09

申请人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

发明人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086

摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2ν=26.5°.

摘要翻译： 本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高 。 该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。 当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下式（1）：等式（1）：[A /（A + B + C + D）]×100> = 70。 在式（1）中，A表示2θ= 34°附近的XRD峰强度，B表示2θ= 31°附近的XRD峰强度，C表示2θ= 35°附近的XRD峰强度 ，D表示2nu = 26.5°附近的XRD峰强度。

公开(公告)号：US09175380B2

公开(公告)日：2015-11-03

申请号：US13981729

申请日：2012-02-09

申请人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

发明人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

IPC分类号： C25B11/00 ,  C25B13/00 ,  C23C14/34 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C23C14/08

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086

摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2θ=26.5°.

摘要翻译： 本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高 。 该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。 当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下列等式（1）：等式（1）：[A /（A + B + C + D）]×100≥70。 在等式（1）中，A表示2附近的XRD峰强度; = 34°，B表示2附近的XRD峰强度; = 31°，C表示2附近的XRD峰强度; = 35°，D表示2θ附近的XRD峰强度= 26.5°。

公开(公告)号：US09023746B2

公开(公告)日：2015-05-05

申请号：US13982327

申请日：2012-02-09

申请人： Yuki Iwasaki ,  Hiroshi Goto ,  Moriyoshi Kanamaru

发明人： Yuki Iwasaki ,  Hiroshi Goto ,  Moriyoshi Kanamaru

IPC分类号： C04B35/00 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/08 ,  C23C14/34 ,  C04B35/453 ,  C04B35/457 ,  C04B35/626 ,  C04B35/645

CPC分类号： C23C14/086 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/604 ,  C04B2235/664 ,  C04B2235/77 ,  C23C14/3414

摘要： Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.

摘要翻译： 本发明提供一种氧化物烧结体，其适用于制造显示装置用氧化物半导体膜，其中氧化物烧结体具有高导电性和相对密度，能够沉积具有高载流子迁移率的氧化物半导体膜。 该氧化物烧结体是通过混合烧结氧化锌，氧化锡和氧化铟的粉末得到的，当对氧化物烧结体进行EPMA面内组成映射时，Sn浓度为10〜50的面积的百分比 测量面积的质量％为70面积％以上。

公开(公告)号：US20130313110A1

公开(公告)日：2013-11-28

申请号：US13982327

申请日：2012-02-09

申请人： Yuki Iwasaki ,  Hiroshi Goto ,  Moriyoshi Kanamaru

发明人： Yuki Iwasaki ,  Hiroshi Goto ,  Moriyoshi Kanamaru

IPC分类号： C23C14/08

CPC分类号： C23C14/086 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/604 ,  C04B2235/664 ,  C04B2235/77 ,  C23C14/3414

摘要： Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.

摘要翻译： 本发明提供一种氧化物烧结体，其适用于制造显示装置用氧化物半导体膜，其中氧化物烧结体具有高导电性和相对密度，能够沉积具有高载流子迁移率的氧化物半导体膜。 该氧化物烧结体是通过混合烧结氧化锌，氧化锡和氧化铟的粉末得到的，当对氧化物烧结体进行EPMA面内组成映射时，Sn浓度为10〜50的面积的百分比 测量面积的质量％为70面积％以上。

公开(公告)号：US20130341183A1

公开(公告)日：2013-12-26

申请号：US14002768

申请日：2012-03-01

申请人： Hiroshi Goto ,  Yuki Iwasaki

发明人： Hiroshi Goto ,  Yuki Iwasaki

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/08 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less.

摘要翻译： 提供了一种氧化物烧结体和溅射靶，其对于制造用于显示装置的氧化物半导体膜是理想的。 所提供的氧化物烧结体和溅射靶都具有高导电性和高相对密度，能够形成具有高载流子迁移率的氧化物半导体膜，并且特别地，在长期内具有优异的直流放电稳定性， 即使通过直流溅射法使用也能够稳定地进行放电。 本发明的氧化物烧结体是通过将氧化锌，氧化锡和至少一种选自Al，Hf，Ni，Si，Ga的金属（M金属）的氧化物混合并烧结而得到的氧化物烧结体 ，In和Ta。 当面内电阻率和深度方向的电阻率由高斯分布近似时，电阻率的分布系数σ为0.02以下。

公开(公告)号：US08163143B2

公开(公告)日：2012-04-24

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US20090026072A1

公开(公告)日：2009-01-29

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/34 ,  C23C16/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜以2000倍的倍数观察垂直于溅射靶的平面的横截面，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积， Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US09058914B2

公开(公告)日：2015-06-16

申请号：US13885868

申请日：2011-11-11

申请人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

发明人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

IPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34

CPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B35/62695 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414

摘要： This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

摘要翻译： 该氧化物烧结体通过混合和烧结氧化锌，氧化锡和氧化铟的粉末而获得。 通过该氧化物烧结体的X射线衍射测定，氧化物烧结体以Zn2SnO4相为主相，并含有In / In2O3-ZnSnO3固溶体，其中In和/或In 2 O 3固溶于ZnSnO 3，但是 不检测Zn x In y O z相（其中，x，y和z各自表示任意的正整数）。 因此，本发明能够提供一种适用于制造显示装置用氧化物半导体膜的氧化物烧结体，具有高导电性和高相对密度。 氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜。

公开(公告)号：US09040441B2

公开(公告)日：2015-05-26

申请号：US14002768

申请日：2012-03-01

申请人： Hiroshi Goto ,  Yuki Iwasaki

发明人： Hiroshi Goto ,  Yuki Iwasaki

IPC分类号： C23C14/08 ,  C23C14/34 ,  C04B35/453 ,  C04B35/457 ,  H01L21/02

CPC分类号： C23C14/3414 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/08 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less.

摘要翻译： 提供了一种氧化物烧结体和溅射靶，其对于制造用于显示装置的氧化物半导体膜是理想的。 所提供的氧化物烧结体和溅射靶都具有高导电性和高相对密度，能够形成具有高载流子迁移率的氧化物半导体膜，并且特别地，在长期内具有优异的直流放电稳定性， 即使通过直流溅射法使用也能够稳定地进行放电。 本发明的氧化物烧结体是通过将氧化锌，氧化锡和至少一种选自Al，Hf，Ni，Si，Ga的金属（M金属）的氧化物混合并烧结而得到的氧化物烧结体 ，In和Ta。 当面内比电阻和深度方向的电阻近似为高斯分布时，分布系数＆sgr; 的电阻为0.02以下。

公开(公告)号：US20130234081A1

公开(公告)日：2013-09-12

申请号：US13885868

申请日：2011-11-11

申请人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

发明人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

IPC分类号： C23C14/08 ,  H01B1/08

CPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B35/62695 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414

摘要： This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

摘要翻译： 该氧化物烧结体通过混合和烧结氧化锌，氧化锡和氧化铟的粉末而获得。 通过该氧化物烧结体的X射线衍射测定，氧化物烧结体以Zn2SnO4相为主相，并含有In / In2O3-ZnSnO3固溶体，其中In和/或In 2 O 3固溶于ZnSnO 3，但是 不检测Zn x In y O z相（其中，x，y和z各自表示任意的正整数）。 因此，本发明能够提供一种适用于制造显示装置用氧化物半导体膜的氧化物烧结体，具有高导电性和高相对密度。 氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜。