摘要:
Selection transistors and drive transistors are formed in individual pixel areas on a substrate. Cathode electrodes which reflect visible light are formed above the selection transistors and the drive transistors so as to cover the pixel areas, with flat insulation films between the cathode electrodes and the selection and drive transistors. An organic EL layer and an anode electrode are sequentially formed on the cathode electrodes.
摘要:
An air conditioner includes an air conditioning unit, and three wiring lines for supplying power to the air conditioning unit. The three wiring lines are a pair of single phase AC power lines and an earth line which are to be connected to three source lines. The three source lines are a pair of single phase AC source lines and a ground line. The air conditioner also includes a detection unit including a detecting device that detects voltages between each of the AC power lines and the earth line, a conversion device that converts the voltages detected by the detecting device into logic level signals, a comparator that determines presence or absence of faulty connection between the three wiring lines and the three source lines by comparing the logic level signals obtained by the conversion device with reference logic level signals, and an output device that shows a result of determination made by the comparator.
摘要:
A phototransistor having a non-linear light vs. conductivity characteristics and an organic electroluminescent layer are sandwiched by a pair of electrodes, a predetermined voltage is applied to the pair of electrodes, and address light is irradiated on a phototransistor to let a current flow in the phototransistor, thus causing the electroluminescent layer to emit light. It is therefore possible to drive the device to present crosstalk-free gradation display with a high contrast ratio.
摘要:
A memory cell has a thin film memory transistor and a thin film selective transistor. The thin film memory transistor has a charge trapping structure and a positive-negative-charge occurrence structure. The charge trapping structure includes a first thin film semiconductor layer, an insulating memory gate layer formed on the first thin film semiconductor layer, and a memory gate electrode. The positive-negative-charge occurrence structure includes an impurity high density layer with a portion facing the memory gate electrode. The thin film selective transistor is coupled to the thin film memory transistor in a serial form and has an only n-channel occurrence structure which includes a second thin film semiconductor layer, an insulating selective gate layer formed on the second thin film semiconductor layer and being thicker than the insulating memory gate layer, and a selective gate electrode formed on said insulating selective gate layer.
摘要:
A conveyor in a plastic working machine, wherein lower dies and upper dies for plastic working of a work in collaboration are disposed on a plurality of working stations, respectively, the stations being set at intervals along the direction in which the work is conveyed, arms each having a handling mechanism for holding the work are provided on transfer bars disposed sideway of the working stations for conveying the work in sequence among the working stations, the transfer bars are provided on both sides of each working station, the arms are bridged between both the transfer bars with both the ends borne on both the transfer bars movably back and forth in the conveying direction or fixed to both the transfer bars.
摘要:
A conveyor in a plastic working machine, wherein lower dies and upper dies for plastic working of a work in collaboration are disposed on a plurality of working stations, respectively, the stations being set at intervals along the direction in which the work is conveyed, arms each having a handling mechanism for holding the work are provided on transfer bars disposed sideway of the working stations for conveying the work in sequence among the working stations, the transfer bars are provided on both sides of each working station, the arms are bridged between both the transfer bars with both the ends borne on both the transfer bars movably back and forth in the conveying direction or fixed to both the transfer bars.
摘要:
An electrophoretic display device includes: first and second substrates; an electrophoretic layer which is interposed between the first and second substrates; and a third substrate which is disposed opposite the first substrate with the second substrate interposed therebetween, which is joined to the first substrate with a sealing member interposed therebetween, and which seals the electrophoretic layer with the second substrate interposed therebetween. The first and third substrates have extension sections extending with respect to the second substrate in a plan view. The sealing member fills a part of a gap between the extension section of the first substrate and the extension section of the third substrate, and the sealing member does not come into contact with an outer edge of the third substrate.
摘要:
A display panel (110) comprises a plurality of optical elements (OEL) each having a pair of electrodes and performing an optical operation according to current passing between the pair of electrodes, a current line (DL), a switch circuit (Tr2) that passes a write current (Ia) with a predetermined current value through the current line (DL) during a selection time (Tse) and stops passing current during a non-selection time (Tnse), and a current storage circuit (Tr1, Tr2, Cs, Cp) that stores current data according to the current value of the write current (Ia) passing through the current line (DL) during the selection time (Tse) and that supplies a drive current (Ib) having a current value, which is obtained by subtracting a predetermined offset current (Ioff) from the current value of the stored write current (Ia), to the optical elements (OEL) during the non-selection time (Tnse). The current storage circuit (Tr1, Tr2, Cs, Cp) includes a first capacitor device (Cs) to which an electrical charge corresponding to the write current (Ia) is written and a second capacitor device (Cp) to which an electrical charge corresponding to offset current (Ioff) is written, and the second capacitor device (Cp) has a capacitive value, which is equal to or larger than the first capacitor device (Cs).
摘要:
A controller stores image signals Sp represented as binary values for every unit of frame. The controller divides one frame into a plurality of sub-frames representing an image by image data of two gradation levels, in accordance with respective figures of the stored image signals Sp for one frame. The image data of two gradation levels for each of the sub-frames is written into capacitors Cp from a drain driver, for every row. When the image data is "1", a drive transistor is turned on. A common driver applies a voltage of a predetermined level for every sub-frame, to control the voltage applied between electrodes of an organic EL element. As a result, the organic EL element emit light with brightness which differs between sub-frames. Images of the sub-frames are visually synthesized, so that gradation is expressed in one frame.
摘要:
A photosensor formed on an insulating substrate has a transparent top gate electrode arranged on the upper side of a semiconductor layer for photoelectric conversion and a bottom gate electrode arranged on the lower side of the semiconductor layer. If light is applied from the top gate electrode side in a state in which a bottom gate voltage V.sub.BG =+20 V is applied to the bottom gate electrode and a top gate voltage V.sub.TG =-20 V is applied to the top gate electrode, electron-hole pairs are generated in the semiconductor layer and only the holes are held in the semiconductor layer by the effect of the top gate voltage V.sub.TG =-20 V. Therefore, an n-channel is formed in the semiconductor layer and a drain current I.sub.DS flows. It was confirmed that the drain current I.sub.DS will not flow even if illumination light is applied when the bottom gate voltage V.sub.BG is set at 0 V. Therefore, the selection or non-selection state of the photosensor can be controlled by the bottom gate voltage V.sub.TG.