公开(公告)号：US20110042719A1

公开(公告)日：2011-02-24

申请号：US12933340

申请日：2009-03-18

申请人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Yasuyukl Kurita ,  Masahiko Hata

发明人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Yasuyukl Kurita ,  Masahiko Hata

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7787 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an objective of the present invention to increase channel current density while allowing a GaN field effect transistor to perform normally-off operation.Provided is a a semiconductor device comprising a group 3-5 compound semiconductor channel layer including nitrogen; an electron supply layer that has a groove in a surface thereof that is opposite a surface facing the channel layer and that supplies the channel layer with electrons; a p-type semiconductor layer that is formed in the groove of the electron supply layer; and a control electrode formed directly on the p-type semiconductor layer or on an intermediate layer formed on the p-type semiconductor layer.

摘要翻译： 本发明的目的是增加沟道电流密度，同时允许GaN场效应晶体管执行常关操作。 提供一种半导体器件，其包括含有氮的组3-5化合物半导体沟道层; 电子供给层，其表面中具有与面向沟道层的表面相对的沟槽，并且向沟道层提供电子; 形成在电子供给层的槽内的p型半导体层; 以及直接形成在p型半导体层上或形成在p型半导体层上的中间层上的控制电极。

公开(公告)号：US20100117094A1

公开(公告)日：2010-05-13

申请号：US12527116

申请日：2008-02-07

申请人： Naohiro Nishikawa ,  Hiroyuki Sazawa ,  Masahiko Hata

发明人： Naohiro Nishikawa ,  Hiroyuki Sazawa ,  Masahiko Hata

IPC分类号： H01L29/772 ,  H01L29/205 ,  H01L21/20

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7783

摘要： The present invention provides a gallium nitride type epitaxial crystal, a method for producing the crystal, and a field effect transistor using the crystal. The gallium nitride type epitaxial crystal comprises a base substrate and the following (a) to (e), wherein a connection layer comprising a gallium nitride type crystal is arranged in an opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p-conductive type semiconductor crystal layer. (a) a gate layer, (b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer, (c) a second buffer layer arranged on the base substrate side of the first buffer layer, (d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having the opening at a part thereof, and (e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer.

摘要翻译： 本发明提供一种氮化镓型外延晶体，该晶体的制造方法以及使用该晶体的场效应晶体管。 氮化镓型外延晶体包括基底和以下（a）至（e），其中包括氮化镓型晶体的连接层被布置在非氮化镓型绝缘层的开口中，以将第一 缓冲层和p导电型半导体晶体层。 （a）栅极层，（b）高纯度第一缓冲层，其含有与栅极层的基底侧上的界面接触的沟道层，（c）第二缓冲层，其设置在第一缓冲层的基底侧 层，（d）配置在第二缓冲层的基板侧的非氮化镓系绝缘层，其一部分具有开口部，（e）配置在基板上的p导电型半导体晶体层 绝缘层的衬底侧。

公开(公告)号：US20100084742A1

公开(公告)日：2010-04-08

申请号：US12310984

申请日：2007-09-14

申请人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Masahiko Hata

发明人： Hiroyuki Sazawa ,  Naohiro Nishikawa ,  Masahiko Hata

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L21/31 ,  H01L29/423

CPC分类号： H01L29/66462 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber.

摘要翻译： 本发明提供一种具有电介质膜的氮化镓半导体外延晶体基板的制造方法，所述电介质膜具有低栅极泄漏电流和可忽略的低栅极滞后，漏极滞后和电流塌陷特性。 半导体外延晶体基板的制造方法是制造半导体外延晶体基板的方法，其中，作为钝化膜或栅极绝缘体的非晶形式的氮化物电介质材料或氧化物电介质材料的介电层设置在 通过金属有机化学气相沉积生长的氮化物半导体晶体层的表面。 在该方法中，在外延生长室中生长氮化物半导体晶体层之后，在外延生长室中的氮化物半导体晶体层上生长电介质层。