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公开(公告)号:US20240222065A1
公开(公告)日:2024-07-04
申请号:US18556927
申请日:2021-06-04
Applicant: Hitachi High- Tech Corporation
Inventor: Yuta IMAI , Daisuke BIZEN , Junichi KATANE
CPC classification number: H01J37/224 , H01J37/28
Abstract: To provide a sample image observation device and a method that restore an image based on a sparsely sampled image and that can improve observation throughput and usability by maintaining a restored image quality constant regardless of a change in an observation condition. In a sample image observation device that irradiates a part of an observation area of the sample 19 with an electron beam and restores an image including a pixel not irradiated with the electron beam, the control system 22 includes a storage unit configured to store a correlation between an irradiation condition of irradiating the observation area of the sample with the electron beam and an observation condition of the sample, a control unit configured to synchronize an irradiation proportion of the electron beam with the observation condition based on the correlation, and an input unit configured to input sample information on the sample.
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公开(公告)号:US20240029994A1
公开(公告)日:2024-01-25
申请号:US18024797
申请日:2020-09-18
Applicant: Hitachi High-Tech Corporation
Inventor: Natsuki TSUNO , Yasuhiro SHIRASAKI , Minami SHOUJI , Daisuke BIZEN , Makoto SUZUKI , Satoshi TAKADA , Yohei NAKAMURA
IPC: H01J37/22 , H01J37/244
CPC classification number: H01J37/222 , H01J37/244 , H01J37/226 , H01J2237/2448
Abstract: This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.
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公开(公告)号:US20210249221A1
公开(公告)日:2021-08-12
申请号:US17049353
申请日:2018-04-26
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor: Nobuhiro OKAI , Daisuke BIZEN , Tomoyasu SHOJO , Naomasa SUZUKI , Muneyuki FUKUDA
IPC: H01J37/244 , H01J37/147 , H01J37/12 , H01J37/28
Abstract: To improve detection efficiency of secondary particles without increasing a size of a charged particle beam apparatus, a charged particle beam apparatus according to the invention includes: a charged particle beam source configured to irradiate a sample with a primary particle beam; a scanning deflector configured to scan and deflect the primary particle beam to a desired position of the sample; and a detector configured to detect secondary particles emitted from the desired position. The charged particle beam apparatus further includes: a focusing lens electrode arranged coaxially with the primary particle beam and configured to generate a focusing electric field that is an electric field that focuses a trajectory of the secondary particles; and a mesh electrode configured to reduce leakage of the focusing electric field on a trajectory of the primary particle beam.
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