公开(公告)号：US20240151665A1

公开(公告)日：2024-05-09

申请号：US18282624

申请日：2021-03-29

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei NAKAMURA ,  Naoko TAKEDA ,  Natsuki TSUNO ,  Satoshi TAKADA ,  Heita KIMIZUKA

IPC: G01N23/2251 ,  H01J37/26

CPC classification number: G01N23/2251 ,  H01J37/265 ,  G01N2223/6116 ,  H01J2237/24564 ,  H01J2237/2806

Abstract: Provided is an inspection system capable of estimating electric characteristics of a sample with high accuracy regardless of an initial charging state of a wafer. The inspection system includes a charged particle beam device and a computer system, and inspects the electric characteristics of the sample. The inspection system evaluates initial charging of an inspection region including inspection patterns based on reference data indicating a secondary charged particle signal from a reference pattern corresponding to a plurality of pulse conditions. The reference pattern has the same electric characteristics as the inspection pattern and initial charging therein caused by electric charges that are not emitted according to a discharge time constant of the sample is negligible. The reference pattern is obtained by irradiating the reference pattern with a pulse charged particle beam under a plurality of pulse conditions.

公开(公告)号：US20240127421A1

公开(公告)日：2024-04-18

申请号：US17769584

申请日：2020-08-24

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei MINEKAWA ,  Takehiro HIRAI ,  Satoshi TAKADA

IPC: G06T7/00 ,  G06V10/764

CPC classification number: G06T7/0008 ,  G06V10/764 ,  G06T2207/30148

Abstract: An object of the present disclosure is to provide a defect classification device capable of easily grasping an appropriate recipe update timing of an imaging device when classification accuracy for classifying defects existing on a semiconductor wafer is decreased. The defect classification device according to the present disclosure calculates classification accuracy by further acquiring a result of a manual classification for defects spanning a plurality of classification spaces as a result of an automatic classification, and comparing the result of the automatic classification with the result of the manual classification (see FIG. 5).

公开(公告)号：US20230369012A1

公开(公告)日：2023-11-16

申请号：US18029004

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Naoko TAKEDA ,  Natsuki TSUNO ,  Satoshi TAKADA ,  Yuto HATTORI

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/244 ,  H01J37/20

CPC classification number: H01J37/222 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

Abstract: Provided is a technique and the like capable of specifying irradiation areas or irradiation positions of a beam and a light as clearly as possible. A charged particle beam apparatus 1 includes: a position adjustment mark 10 provided on a stage 6 and irradiated with a beam b1 and a light a1; and a mechanism setting an irradiation position of the beam b1 and an irradiation position of the light a1 with respect to the stage 6 and changing a relative positional relationship including a distance between the irradiation position of the light a1 and the stage 6. A computer system 2 generates a first image in which the position adjustment mark 10 is reflected based on a first detection signal obtained by irradiating the position adjustment mark 10 with the beam b1, generates a second image in which an irradiation area of the light a1 is reflected in the vicinity of the position adjustment mark 10 based on a second detection signal obtained by irradiating the position adjustment mark 10 with the light a1, and adjusts an irradiation position of the beam b1 and an irradiation position of the light a1 based on the first image and the second image obtained when a positional relationship is changed by the mechanism.

公开(公告)号：US20230273254A1

公开(公告)日：2023-08-31

申请号：US18026718

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Shota MITSUGI ,  Yohei NAKAMURA ,  Daisuke BIZEN ,  Junichi FUSE ,  Satoshi TAKADA ,  Natsuki TSUNO

IPC: G01R31/265

CPC classification number: G01R31/2653 ,  G01R31/2656

Abstract: A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

公开(公告)号：US20230273253A1

公开(公告)日：2023-08-31

申请号：US18016882

申请日：2020-09-29

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro SHIRASAKI ,  Natsuki TSUNO ,  Minami SHOUJI ,  Makoto SAKAKIBARA ,  Satoshi TAKADA

IPC: G01R31/265

CPC classification number: G01R31/2653

Abstract: A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

公开(公告)号：US20240127417A1

公开(公告)日：2024-04-18

申请号：US17769557

申请日：2020-09-04

Applicant: Hitachi High-Tech Corporation

Inventor： Takehiro HIRAI ,  Yohei MINEKAWA ,  Satoshi TAKADA

IPC: G06T7/00 ,  G01N23/223

CPC classification number: G06T7/0004 ,  G01N23/223 ,  G01N2223/6116 ,  G01N2223/646 ,  G06T2207/10061 ,  G06T2207/10116 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: The present disclosure proposes a system for detecting a foreign material adhering to or a scratch formed on a bevel at an edge of a semiconductor wafer in order to detect the foreign material or defect on the bevel without using a reference image and including a learning device (905) that outputs information on the foreign material adhering to or the scratch formed on the bevel as a learning result, in which the learning device performs learning in advance by using image data acquired by an image acquisition tool and the information on the foreign material or the scratch on the bevel included in the image data, and the foreign material or the scratch is detected by inputting the image data obtained by the image acquisition tool to the learning device (refer to FIG. 9).

公开(公告)号：US20240029994A1

公开(公告)日：2024-01-25

申请号：US18024797

申请日：2020-09-18

Applicant: Hitachi High-Tech Corporation

Inventor： Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Minami SHOUJI ,  Daisuke BIZEN ,  Makoto SUZUKI ,  Satoshi TAKADA ,  Yohei NAKAMURA

IPC: H01J37/22 ,  H01J37/244

CPC classification number: H01J37/222 ,  H01J37/244 ,  H01J37/226 ,  H01J2237/2448

Abstract: This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

公开(公告)号：US20230253180A1

公开(公告)日：2023-08-10

申请号：US18015605

申请日：2020-09-18

Applicant: Hitachi High-Tech Corporation

Inventor： Daisuke BIZEN ,  Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Yohei NAKAMURA ,  Satoshi TAKADA

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/244

Abstract: A charged particle optical system scans a sample with a pulsed charged particle beam and detects secondary charged particles; and a scan image is formed. Control is carried out so that a deflection signal for deflecting the charged particle beam in a first direction, a first timing for pulsed irradiation, a second timing for pulsed irradiation, and a third timing for detection of the secondary charged particles are synchronized. When the deflection amount of the charged particle beam in the time period of the first timing corresponds to the coordinates of n pixels in the scan image, the same line is scanned m times (m

公开(公告)号：US20220028652A1

公开(公告)日：2022-01-27

申请号：US17331765

申请日：2021-05-27

Applicant: Hitachi High-Tech Corporation

Inventor： Kosuke MATSUMOTO ,  Satoshi TAKADA ,  Takashi NOBUHARA ,  Hirohiko KITSUKI ,  Kazuo AOKI

IPC: H01J37/28 ,  H01J37/26 ,  H01J37/21

Abstract: There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.