公开(公告)号：US20230274909A1

公开(公告)日：2023-08-31

申请号：US18019347

申请日：2020-09-28

Applicant: Hitachi High-Tech Corporation

Inventor： Minami SHOUJI ,  Yasuhiro SHIRASAKI ,  Natsuki TSUNO ,  Hirohiko KITSUKI ,  Hiroya OHTA

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/226

Abstract: An object of the invention is to obtain an observation image in which a plurality of pieces of feature data of a sample are emphasized in a charged particle beam device that acquires an observation image of the sample by irradiating the sample with a charged particle beam and light. The charged particle beam device according to the invention calculates a sequence for modulating a light irradiation condition according to an irradiation condition of a charged particle beam, and controls the light irradiation condition according to the sequence (see FIG. 2).

公开(公告)号：US20220216032A1

公开(公告)日：2022-07-07

申请号：US17610908

申请日：2019-05-21

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Minami SHOUJI ,  Natsuki TSUNO ,  Hiroya OHTA ,  Daisuke BIZEN ,  Hajime KAWANO

IPC: H01J37/22 ,  H01J37/244

Abstract: An object of the invention is to provide a charged particle beam apparatus capable of acquiring an observation image having a high contrast in a sample whose light absorption characteristic depends on a light wavelength. The charged particle beam apparatus according to the invention irradiates the sample with light, generates an observation image of the sample, changes an irradiation intensity per unit time of the light, and then generates a plurality of the observation images having different contrasts (see FIG. 4).

公开(公告)号：US20230377837A1

公开(公告)日：2023-11-23

申请号：US18031359

申请日：2020-10-26

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei NAKAMURA ,  Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Minami SHOUJI ,  Shota MITSUGI ,  Yuko SASAKI

IPC: H01J37/26 ,  H01J37/244 ,  H01J37/22 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/244 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2448

Abstract: Charged particle beam apparatus includes: a charged particle optical system to irradiate a sample with a pulsed charged particle beam; an optical system to irradiate the sample with light; a detector configured to detect a secondary charged particle emitted by irradiating the sample with the pulsed charged particle beam; a control unit configured to control the charged particle optical system to irradiate the sample with the pulsed charged particle beam under a predetermined electron beam pulse condition, and control the optical system to irradiate the sample with the light under a predetermined light irradiation condition; and a computation device configured to set the predetermined light irradiation condition based on a difference between a secondary charged particle signal amount detected under a first electron beam pulse condition and a secondary charged particle signal amount detected under a second electron beam pulse condition different from the first electron beam pulse condition.

公开(公告)号：US20230273253A1

公开(公告)日：2023-08-31

申请号：US18016882

申请日：2020-09-29

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro SHIRASAKI ,  Natsuki TSUNO ,  Minami SHOUJI ,  Makoto SAKAKIBARA ,  Satoshi TAKADA

IPC: G01R31/265

CPC classification number: G01R31/2653

Abstract: A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

公开(公告)号：US20240363306A1

公开(公告)日：2024-10-31

申请号：US18771126

申请日：2024-07-12

Applicant: Hitachi High-Tech Corporation

Inventor： Minami SHOUJI ,  Natsuki TSUNO ,  Hiroya OHTA ,  Daisuke BIZEN ,  Hajime KAWANO

IPC: H01J37/22 ,  H01J37/244

CPC classification number: H01J37/222 ,  H01J37/226 ,  H01J37/244

Abstract: An object of the invention is to provide a charged particle beam apparatus capable of acquiring an observation image having a high contrast in a sample whose light absorption characteristic depends on a light wavelength. The charged particle beam apparatus according to the invention irradiates the sample with light, generates an observation image of the sample, changes an irradiation intensity per unit time of the light, and then generates a plurality of the observation images having different contrasts.

公开(公告)号：US20240029994A1

公开(公告)日：2024-01-25

申请号：US18024797

申请日：2020-09-18

Applicant: Hitachi High-Tech Corporation

Inventor： Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Minami SHOUJI ,  Daisuke BIZEN ,  Makoto SUZUKI ,  Satoshi TAKADA ,  Yohei NAKAMURA

IPC: H01J37/22 ,  H01J37/244

CPC classification number: H01J37/222 ,  H01J37/244 ,  H01J37/226 ,  H01J2237/2448

Abstract: This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

公开(公告)号：US20220059317A1

公开(公告)日：2022-02-24

申请号：US17274872

申请日：2018-09-11

Applicant: Hitachi High-Tech Corporation

Inventor： Minami SHOUJI ,  Natsuki TSUNO ,  Toshihide AGEMURA

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/26 ,  H01J37/244

Abstract: An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.