公开(公告)号：US20240177964A1

公开(公告)日：2024-05-30

申请号：US18283499

申请日：2021-03-26

Applicant: Hitachi High-Tech Corporation

Inventor： Heita KIMIZUKA ,  Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Minami UCHIHO

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/228 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2448 ,  H01J2237/2809

Abstract: An object of the present disclosure is to provide a charged particle beam system capable of obtaining information about a sample by using a feature amount on an observed image caused by light interference, light diffraction, light standing waves, and the like caused by irradiating a sample with light, and the like. In the charged particle beam system according to the present disclosure, a first feature amount resulting from the light interference, the light diffraction, or the light standing wave generated by irradiating the sample with light is extracted from the observed image of the sample, and a second feature amount of the sample is obtained by using the first feature amount (see FIG. 6).

公开(公告)号：US20230274909A1

公开(公告)日：2023-08-31

申请号：US18019347

申请日：2020-09-28

Applicant: Hitachi High-Tech Corporation

Inventor： Minami SHOUJI ,  Yasuhiro SHIRASAKI ,  Natsuki TSUNO ,  Hirohiko KITSUKI ,  Hiroya OHTA

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/226

Abstract: An object of the invention is to obtain an observation image in which a plurality of pieces of feature data of a sample are emphasized in a charged particle beam device that acquires an observation image of the sample by irradiating the sample with a charged particle beam and light. The charged particle beam device according to the invention calculates a sequence for modulating a light irradiation condition according to an irradiation condition of a charged particle beam, and controls the light irradiation condition according to the sequence (see FIG. 2).

公开(公告)号：US20230253180A1

公开(公告)日：2023-08-10

申请号：US18015605

申请日：2020-09-18

Applicant: Hitachi High-Tech Corporation

Inventor： Daisuke BIZEN ,  Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Yohei NAKAMURA ,  Satoshi TAKADA

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/244

Abstract: A charged particle optical system scans a sample with a pulsed charged particle beam and detects secondary charged particles; and a scan image is formed. Control is carried out so that a deflection signal for deflecting the charged particle beam in a first direction, a first timing for pulsed irradiation, a second timing for pulsed irradiation, and a third timing for detection of the secondary charged particles are synchronized. When the deflection amount of the charged particle beam in the time period of the first timing corresponds to the coordinates of n pixels in the scan image, the same line is scanned m times (m

公开(公告)号：US20230377837A1

公开(公告)日：2023-11-23

申请号：US18031359

申请日：2020-10-26

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei NAKAMURA ,  Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Minami SHOUJI ,  Shota MITSUGI ,  Yuko SASAKI

IPC: H01J37/26 ,  H01J37/244 ,  H01J37/22 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/244 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2448

Abstract: Charged particle beam apparatus includes: a charged particle optical system to irradiate a sample with a pulsed charged particle beam; an optical system to irradiate the sample with light; a detector configured to detect a secondary charged particle emitted by irradiating the sample with the pulsed charged particle beam; a control unit configured to control the charged particle optical system to irradiate the sample with the pulsed charged particle beam under a predetermined electron beam pulse condition, and control the optical system to irradiate the sample with the light under a predetermined light irradiation condition; and a computation device configured to set the predetermined light irradiation condition based on a difference between a secondary charged particle signal amount detected under a first electron beam pulse condition and a secondary charged particle signal amount detected under a second electron beam pulse condition different from the first electron beam pulse condition.

公开(公告)号：US20230273253A1

公开(公告)日：2023-08-31

申请号：US18016882

申请日：2020-09-29

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro SHIRASAKI ,  Natsuki TSUNO ,  Minami SHOUJI ,  Makoto SAKAKIBARA ,  Satoshi TAKADA

IPC: G01R31/265

CPC classification number: G01R31/2653

Abstract: A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

公开(公告)号：US20250046569A1

公开(公告)日：2025-02-06

申请号：US18722800

申请日：2022-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro SHIRASAKI ,  Minami UCHIHO ,  Kazufumi YACHI

IPC: H01J37/22 ,  G01N23/225 ,  H01J37/10

Abstract: Film quality of a deposited semiconductor film, insulating film, or the like is inspected in a non-contact manner. An inspection device 1 for inspecting film quality of a film formed on a sample 16 includes a charged particle source 12 configured to irradiate the sample with a charged particle beam 13, a first light source 21 configured to irradiate the sample with first light 26, a photodetection system configured to detect signal light 28 generated when the sample is irradiated with the first light, a charge control electrode 17 configured to control an electric field on the sample or a second light source 22 configured to irradiate the sample with second light 27, a control device 30 configured to modulate an electronic state of the sample using the charged particle source and the charge control electrode or the second light source, and a computer 31 configured to estimate the film quality of the film formed on the sample based on a detection signal of the signal light modulated according to the modulated electronic state of the sample, the detection signal being output from the photodetection system.

公开(公告)号：US20240029994A1

公开(公告)日：2024-01-25

申请号：US18024797

申请日：2020-09-18

Applicant: Hitachi High-Tech Corporation

Inventor： Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Minami SHOUJI ,  Daisuke BIZEN ,  Makoto SUZUKI ,  Satoshi TAKADA ,  Yohei NAKAMURA

IPC: H01J37/22 ,  H01J37/244

CPC classification number: H01J37/222 ,  H01J37/244 ,  H01J37/226 ,  H01J2237/2448

Abstract: This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.