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公开(公告)号：US20230253180A1
公开(公告)日：2023-08-10
申请号：US18015605
申请日：2020-09-18
IPC分类号： H01J37/28 , H01J37/20 , H01J37/244
CPC分类号： H01J37/28 , H01J37/20 , H01J37/244
摘要： A charged particle optical system scans a sample with a pulsed charged particle beam and detects secondary charged particles; and a scan image is formed. Control is carried out so that a deflection signal for deflecting the charged particle beam in a first direction, a first timing for pulsed irradiation, a second timing for pulsed irradiation, and a third timing for detection of the secondary charged particles are synchronized. When the deflection amount of the charged particle beam in the time period of the first timing corresponds to the coordinates of n pixels in the scan image, the same line is scanned m times (m
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公开(公告)号：US20230377837A1
公开(公告)日：2023-11-23
申请号：US18031359
申请日：2020-10-26
发明人： Yohei NAKAMURA , Natsuki TSUNO , Yasuhiro SHIRASAKI , Minami SHOUJI , Shota MITSUGI , Yuko SASAKI
IPC分类号： H01J37/26 , H01J37/244 , H01J37/22 , H01J37/28
CPC分类号： H01J37/265 , H01J37/244 , H01J37/226 , H01J37/28 , H01J2237/2448
摘要： Charged particle beam apparatus includes: a charged particle optical system to irradiate a sample with a pulsed charged particle beam; an optical system to irradiate the sample with light; a detector configured to detect a secondary charged particle emitted by irradiating the sample with the pulsed charged particle beam; a control unit configured to control the charged particle optical system to irradiate the sample with the pulsed charged particle beam under a predetermined electron beam pulse condition, and control the optical system to irradiate the sample with the light under a predetermined light irradiation condition; and a computation device configured to set the predetermined light irradiation condition based on a difference between a secondary charged particle signal amount detected under a first electron beam pulse condition and a secondary charged particle signal amount detected under a second electron beam pulse condition different from the first electron beam pulse condition.
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公开(公告)号：US20230273254A1
公开(公告)日：2023-08-31
申请号：US18026718
申请日：2020-09-30
发明人： Shota MITSUGI , Yohei NAKAMURA , Daisuke BIZEN , Junichi FUSE , Satoshi TAKADA , Natsuki TSUNO
IPC分类号： G01R31/265
CPC分类号： G01R31/2653 , G01R31/2656
摘要： A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.
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公开(公告)号：US20240029994A1
公开(公告)日：2024-01-25
申请号：US18024797
申请日：2020-09-18
发明人： Natsuki TSUNO , Yasuhiro SHIRASAKI , Minami SHOUJI , Daisuke BIZEN , Makoto SUZUKI , Satoshi TAKADA , Yohei NAKAMURA
IPC分类号： H01J37/22 , H01J37/244
CPC分类号： H01J37/222 , H01J37/244 , H01J37/226 , H01J2237/2448
摘要： This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.
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5.发明申请公开(公告)号：US20210042900A1
公开(公告)日：2021-02-11
申请号：US16904309
申请日：2020-06-17
发明人： Heita KIMIZUKA , Yohei NAKAMURA , Natsuki TSUNO , Muneyuki FUKUDA
IPC分类号： G06T7/00
摘要： An object of the present disclosure is to provide a system for deriving a type of a defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with abeam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.
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公开(公告)号：US20240151665A1
公开(公告)日：2024-05-09
申请号：US18282624
申请日：2021-03-29
发明人： Yohei NAKAMURA , Naoko TAKEDA , Natsuki TSUNO , Satoshi TAKADA , Heita KIMIZUKA
IPC分类号： G01N23/2251 , H01J37/26
CPC分类号： G01N23/2251 , H01J37/265 , G01N2223/6116 , H01J2237/24564 , H01J2237/2806
摘要： Provided is an inspection system capable of estimating electric characteristics of a sample with high accuracy regardless of an initial charging state of a wafer. The inspection system includes a charged particle beam device and a computer system, and inspects the electric characteristics of the sample. The inspection system evaluates initial charging of an inspection region including inspection patterns based on reference data indicating a secondary charged particle signal from a reference pattern corresponding to a plurality of pulse conditions. The reference pattern has the same electric characteristics as the inspection pattern and initial charging therein caused by electric charges that are not emitted according to a discharge time constant of the sample is negligible. The reference pattern is obtained by irradiating the reference pattern with a pulse charged particle beam under a plurality of pulse conditions.
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7.发明公开公开(公告)号：US20230274417A1
公开(公告)日：2023-08-31
申请号：US18315046
申请日：2023-05-10
发明人： Heita KIMIZUKA , Yohei NAKAMURA , Natsuki TSUNO , Muneyuki FUKUDA
IPC分类号： G06T7/00
CPC分类号： G06T7/001 , G06T2207/30148 , G06T2207/10152
摘要： An object of the present disclosure is to provide a system for deriving a type of defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.
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