公开(公告)号：US10799944B2

公开(公告)日：2020-10-13

申请号：US15622374

申请日：2017-06-14

Applicant: Hitachi Metals, Ltd.

Inventor： Keisuke Fujito ,  Shohei Hata ,  Takayuki Tsuji ,  Hiromitsu Kuroda

IPC: B22D11/04 ,  B22D11/116 ,  C22C1/04 ,  B22D11/00 ,  C22C1/02 ,  C22C1/10 ,  C22C9/00 ,  B21B3/00

Abstract: A copper alloy material manufacturing equipment for manufacturing a copper alloy material by continuously casting molten copper. The equipment includes an element adding means for adding a metal element to the molten copper, a tundish for holding the molten copper containing the metal element, a pouring nozzle connected to the tundish to feed the molten copper from the tundish, and a trapping member arranged inside the tundish and including a same type of material as at least one of an oxide of the metal element, a nitride of the metal element, a carbide of the metal element and a sulfide of the metal element.

公开(公告)号：US10718037B2

公开(公告)日：2020-07-21

申请号：US15052657

申请日：2016-02-24

Applicant: Hitachi Metals, Ltd.

Inventor： Shohei Hata ,  Takayuki Tsuji ,  Hiromitsu Kuroda ,  Keisuke Fujito

IPC: C22C9/00 ,  C22C1/02 ,  C22F1/08 ,  B22D11/00

Abstract: A copper alloy material production method is provided. A copper raw material including not higher than 30 ppm by mass of oxygen is melted to form a molten copper. Not lower than 4 ppm by mass and not higher than 55 ppm by mass of titanium is added to the molten copper. After the adding of the titanium, not lower than 100 ppm by mass and not higher than 7000 ppm by mass of magnesium is added.

公开(公告)号：US09769933B2

公开(公告)日：2017-09-19

申请号：US14514819

申请日：2014-10-15

Applicant: Hitachi Metals, Ltd.

Inventor： Hideyuki Sagawa ,  Keisuke Fujito ,  Takayuki Tsuji ,  Kotaro Tanaka ,  Hiromitsu Kuroda

IPC: H05K1/09 ,  H05K3/10 ,  H05K3/28 ,  H05K3/06 ,  H05K3/24

CPC classification number: H05K3/282 ,  H05K3/06 ,  H05K3/244 ,  H05K2201/0341 ,  H05K2201/0355 ,  H05K2203/0315 ,  H05K2203/087 ,  Y10T29/49162

Abstract: A printed circuit board includes a substrate, and a wiring provided on the substrate. The wiring includes a copper-based metal wire provided on the substrate and a surface-treated layer provided on the copper-based metal wire. The copper-based metal wire includes mainly a copper. The surface-treated layer includes an amorphous layer including oxygen and a metal with a higher oxygen affinity than the copper.

公开(公告)号：US20140302342A1

公开(公告)日：2014-10-09

申请号：US14221188

申请日：2014-03-20

Applicant: Hitachi Metals, Ltd.

Inventor： Seigi AOYAMA ,  Toru Sumi ,  Hideyuki Sagawa ,  Keisuke Fujito ,  Masayoshi Goto ,  Hiroyoshi Hiruta

IPC: C22F1/08 ,  C22C9/00

CPC classification number: C22F1/08 ,  C22C9/00 ,  Y10T428/1266

Abstract: A copper wire includes a copper wire rod including 5 to 55 mass ppm of Ti, 3 to 12 mass ppm of sulfur, and 2 to 30 mass ppm of oxygen with the balance copper and inevitable impurities, a first crystal including a [111] crystal orientation and at least one twin crystal therein, and a second crystal that includes one or more crystals adjacent to the first crystal, a [111] crystal orientation with a different rotation angle on an atomic plane from the first crystal, and at least one twin crystal therein.

Abstract translation: 铜线包括铜线，其包含5〜55质量ppm的Ti，3〜12质量ppm的硫和2〜30质量ppm的氧，余量为铜和不可避免的杂质，含有[111]晶体的第一晶体 取向和其中的至少一个双晶，以及包括与第一晶体相邻的一个或多个晶体的第二晶体，在与第一晶体的原子平面上具有不同旋转角度的[111]晶体取向，以及至少一个双 晶体。

公开(公告)号：US20140202730A1

公开(公告)日：2014-07-24

申请号：US14075285

申请日：2013-11-08

Applicant: Hitachi Metals, Ltd.

Inventor： Keisuke Fujito ,  Seigi Aoyama ,  Toru Sumi ,  Hideyuki Sagawa

IPC: H01B1/02

CPC classification number: H01B1/026

Abstract: A soft dilute-copper alloy insulated twisted wire includes a plurality of insulated wires twisted together and each including a conductor and an insulating cover layer thereon. The conductor includes a soft dilute-copper alloy wire including a soft dilute-copper alloy material including an additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn and Cr with a balance consisting a copper and an inevitable impurity. An average crystal grain size in a region from a surface of the soft dilute-copper alloy wire to a depth of at least 20% of a wire diameter is not more than 20 μm.

Abstract translation: 软的稀铜合金绝缘绞线包括多个绞合在一起的绝缘电线，并且每个包括导体和绝缘覆盖层。 导体包括软包铜合金线，其包括软的稀铜合金材料，其包括选自由Ti，Mg，Zr，Nb，Ca，V，Ni，Mn和Cr组成的组的另外的元素，余量由 铜和不可避免的杂质。 从软性稀铜合金线的表面到电线直径的至少20％的深度的区域的平均结晶粒径不大于20μm。