公开(公告)号：US08338854B2

公开(公告)日：2012-12-25

申请号：US12384185

申请日：2009-03-31

申请人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

发明人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

IPC分类号： H01L29/866

CPC分类号： H01L29/866 ,  H01L27/0259 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/0657

摘要： A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate of a first conductivity type. The TVS includes a buried dopant region of a second conductivity type disposed and encompassed in an epitaxial layer of the first conductivity type wherein the buried dopant region extends laterally and has an extended bottom junction area interfacing with the underlying portion of the epitaxial layer thus constituting a Zener diode for the TVS device. The TVS device further includes a region above the buried dopant region further comprising a top dopant layer of a second conductivity type and a top contact region of a second conductivity type which act in combination with the epitaxial layer and the buried dopant region to form a plurality of interfacing PN junctions constituting a SCR acting as a steering diode to function with the Zener diode for suppressing a transient voltage.

摘要翻译： 一种设置在第一导电类型的半导体衬底上的瞬态电压抑制（TVS）器件。 TVS包括第二导电类型的掩埋掺杂区域，其被布置和包围在第一导电类型的外延层中，其中掩埋掺杂剂区域横向延伸并且具有与外延层的下面部分接合的延伸的底部接合区域，从而构成 用于TVS器件的齐纳二极管。 TVS器件还包括掩埋掺杂剂区域上方的区域，还包括第二导电类型的顶部掺杂剂层和第二导电类型的顶部接触区域，其与外延层和掩埋掺杂剂区域结合起来以形成多个 连接构成SCR作为转向二极管的PN结与用于抑制瞬态电压的齐纳二极管起作用的PN结。

公开(公告)号：US10096588B2

公开(公告)日：2018-10-09

申请号：US15721841

申请日：2017-09-30

申请人： Madhur Bobde ,  Wenjiang Zeng ,  Limin Weng

发明人： Madhur Bobde ,  Wenjiang Zeng ,  Limin Weng

IPC分类号： H01L21/283 ,  H01L27/02 ,  H01L21/822 ,  H01L29/43 ,  H01L29/45 ,  H01L29/66 ,  H01L29/74 ,  H01L29/10 ,  H01L29/06

摘要： A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.

公开(公告)号：US09793254B2

公开(公告)日：2017-10-17

申请号：US14565392

申请日：2014-12-09

申请人： Madhur Bobde ,  Wenjiang Zeng ,  Limin Weng

发明人： Madhur Bobde ,  Wenjiang Zeng ,  Limin Weng

IPC分类号： H01L21/336 ,  H01L27/02 ,  H01L21/822 ,  H01L21/283

CPC分类号： H01L27/0248 ,  H01L21/283 ,  H01L21/822 ,  H01L27/0262 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/1016 ,  H01L29/43 ,  H01L29/456 ,  H01L29/66371 ,  H01L29/7412

摘要： A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.

公开(公告)号：US08835977B2

公开(公告)日：2014-09-16

申请号：US13720140

申请日：2012-12-19

申请人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

发明人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

IPC分类号： H01L29/866 ,  H01L27/04 ,  H01L27/02 ,  H01L27/08

CPC分类号： H01L27/0259 ,  H01L27/0255 ,  H01L27/0262 ,  H01L27/0814 ,  H01L29/866 ,  H01L29/87

摘要： A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate of a first conductivity type. The TVS includes a buried dopant region of a second conductivity type disposed and encompassed in an epitaxial layer of the first conductivity type wherein the buried dopant region extends laterally and has an extended bottom junction area interfacing with the underlying portion of the epitaxial layer thus constituting a Zener diode for the TVS device. The TVS device further includes a region above the buried dopant region further comprising a top dopant layer of a second conductivity type and a top contact region of a second conductivity type which act in combination with the epitaxial layer and the buried dopant region to form a plurality of interfacing PN junctions constituting a SCR acting as a steering diode to function with the Zener diode for suppressing a transient voltage.

摘要翻译： 一种设置在第一导电类型的半导体衬底上的瞬态电压抑制（TVS）器件。 TVS包括第二导电类型的掩埋掺杂区域，其被布置和包围在第一导电类型的外延层中，其中掩埋掺杂剂区域横向延伸并且具有与外延层的下面部分接合的延伸的底部接合区域，从而构成 用于TVS器件的齐纳二极管。 TVS器件还包括掩埋掺杂剂区域上方的区域，还包括第二导电类型的顶部掺杂剂层和第二导电类型的顶部接触区域，其与外延层和掩埋掺杂剂区域结合起来以形成多个 连接构成SCR作为转向二极管的PN结与用于抑制瞬态电压的齐纳二极管起作用的PN结。

公开(公告)号：US20140167101A1

公开(公告)日：2014-06-19

申请号：US13720140

申请日：2012-12-19

申请人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

发明人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

IPC分类号： H01L27/04

CPC分类号： H01L27/0259 ,  H01L27/0255 ,  H01L27/0262 ,  H01L27/0814 ,  H01L29/866 ,  H01L29/87

摘要： A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate of a first conductivity type. The TVS includes a buried dopant region of a second conductivity type disposed and encompassed in an epitaxial layer of the first conductivity type wherein the buried dopant region extends laterally and has an extended bottom junction area interfacing with the underlying portion of the epitaxial layer thus constituting a Zener diode for the TVS device. The TVS device further includes a region above the buried dopant region further comprising a top dopant layer of a second conductivity type and a top contact region of a second conductivity type which act in combination with the epitaxial layer and the buried dopant region to form a plurality of interfacing PN junctions constituting a SCR acting as a steering diode to function with the Zener diode for suppressing a transient voltage.

摘要翻译： 一种设置在第一导电类型的半导体衬底上的瞬态电压抑制（TVS）器件。 TVS包括第二导电类型的掩埋掺杂区域，其被布置和包围在第一导电类型的外延层中，其中掩埋掺杂剂区域横向延伸并且具有与外延层的下面部分接合的延伸的底部接合区域，从而构成 用于TVS器件的齐纳二极管。 TVS器件还包括掩埋掺杂剂区域上方的区域，还包括第二导电类型的顶部掺杂剂层和第二导电类型的顶部接触区域，其与外延层和掩埋掺杂剂区域结合起来以形成多个 连接构成SCR作为转向二极管的PN结与用于抑制瞬态电压的齐纳二极管起作用的PN结。

公开(公告)号：US07863995B2

公开(公告)日：2011-01-04

申请号：US12080104

申请日：2008-04-01

申请人： Moses Ho ,  Madhur Bobde ,  Mike Chang ,  Limin Weng

发明人： Moses Ho ,  Madhur Bobde ,  Mike Chang ,  Limin Weng

IPC分类号： H04B3/28 ,  H01L25/00

CPC分类号： H01L27/0676 ,  H01L23/552 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A transient voltage suppressing (TVS) circuit with uni-directional blocking and symmetric bi-directional blocking capabilities integrated with an electromagnetic interference (EMI) filter supported on a semiconductor substrate of a first conductivity type. The TVS circuit integrated with the EMI filter further includes a ground terminal disposed on the surface for the symmetric bi-directional blocking structure and at the bottom of the semiconductor substrate for the uni-directional blocking structure and an input and an output terminal disposed on a top surface with at least a Zener diode and a plurality of capacitors disposed in the semiconductor substrate to couple the ground terminal to the input and output terminals with a direct capacitive coupling without an intermediate floating body region.

摘要翻译： 具有与第一导电类型的半导体衬底上支持的电磁干扰（EMI）滤波器集成的具有单向阻塞和对称双向阻塞能力的瞬态电压抑制（TVS）电路。 与EMI滤波器集成的TVS电路还包括设置在用于对称双向阻塞结构的表面上的接地端子和用于单向阻塞结构的半导体衬底的底部以及设置在单向阻断结构上的输入和输出端子 具有至少齐纳二极管的顶表面和设置在半导体衬底中的多个电容器，以将接地端子连接到具有直接电容耦合而不具有中间浮体区域的输入和输出端子。

公开(公告)号：US20100244090A1

公开(公告)日：2010-09-30

申请号：US12384185

申请日：2009-03-31

申请人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

发明人： Madhur Bobde ,  Lingpeng Guan ,  Anup Bhalla ,  Limin Weng

IPC分类号： H01L29/866

CPC分类号： H01L29/866 ,  H01L27/0259 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/0657

摘要： A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate of a first conductivity type. The TVS includes a buried dopant region of a second conductivity type disposed and encompassed in an epitaxial layer of the first conductivity type wherein the buried dopant region extends laterally and has an extended bottom junction area interfacing with the underlying portion of the epitaxial layer thus constituting a Zener diode for the TVS device. The TVS device further includes a region above the buried dopant region further comprising a top dopant layer of a second conductivity type and a top contact region of a second conductivity type which act in combination with the epitaxial layer and the buried dopant region to form a plurality of interfacing PN junctions constituting a SCR acting as a steering diode to function with the Zener diode for suppressing a transient voltage.

摘要翻译： 一种设置在第一导电类型的半导体衬底上的瞬态电压抑制（TVS）器件。 TVS包括第二导电类型的掩埋掺杂区域，其被布置和包围在第一导电类型的外延层中，其中掩埋掺杂剂区域横向延伸并且具有与外延层的下面部分接合的延伸的底部接合区域，从而构成 用于TVS器件的齐纳二极管。 TVS器件还包括掩埋掺杂剂区域上方的区域，还包括第二导电类型的顶部掺杂剂层和第二导电类型的顶部接触区域，其与外延层和掩埋掺杂剂区域结合起来以形成多个 连接构成SCR作为转向二极管的PN结与用于抑制瞬态电压的齐纳二极管起作用的PN结。