公开(公告)号：US07045240B2

公开(公告)日：2006-05-16

申请号：US10466860

申请日：2002-01-09

申请人： Atsuo Yamada ,  Hisashi Kajiura ,  Masashi Shiraishi ,  Ryuichiro Maruyama ,  Yasuhiro Watanabe ,  Takahiro Nakamura ,  Hiroshi Miyazawa

发明人： Atsuo Yamada ,  Hisashi Kajiura ,  Masashi Shiraishi ,  Ryuichiro Maruyama ,  Yasuhiro Watanabe ,  Takahiro Nakamura ,  Hiroshi Miyazawa

IPC分类号： H01M8/10

CPC分类号： B82Y30/00 ,  H01M4/8605 ,  H01M4/90 ,  H01M4/92 ,  H01M8/04089 ,  H01M8/065 ,  H01M8/1004 ,  H01M8/1007 ,  H01M8/1016

摘要： A power generating apparatus includes a proton conductor unit, containing a fullerene derivative, a hydrogen electrode bonded to one surface of the proton conductor unit, an oxygen electrode bonded to the other surface of the proton conductor unit, and a hydrogen gas supplying unit for supplying a hydrogen gas at a pressure of approximately 0.2 to approximately 3.5 atm to the hydrogen electrode. The present power generating apparatus effectively suppresses transmission of hydrogen and oxygen gases so that it is possible to prevent the hydrogen gas from being emitted to atmosphere due to transmission as well as to prevent the oxygen gas from reaching the hydrogen electrode on transmission to prevent the hydrogen gas from being consumed without contributing to power generation.

摘要翻译： 一种发电装置，包括含有富勒烯衍生物的质子导体单元，与质子导体单元的一个面接合的氢电极，与该质子导体单元的另一个表面接合的氧电极，以及供给 压力为氢电极约0.2至约3.5atm的氢气。 本发明的发电装置有效地抑制氢气和氧气的传输，从而可以防止氢气由于透过而被排放到大气中，并且防止氧气在透射时到达氢电极，以防止氢 消耗的气体无助于发电。

公开(公告)号：US07719032B2

公开(公告)日：2010-05-18

申请号：US10535927

申请日：2003-11-05

申请人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

发明人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

IPC分类号： H01L21/00

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/949

摘要： A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).

摘要翻译： 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点，能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层（1）的多壁碳纳米管（10）和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层（2） 1）。 金属源电极（3）和金属漏电极（5）与半导体碳纳米管层（1）的两端接触，同时金属栅电极（4）与金属碳纳米管层 2）。 将半导体碳纳米管层（1）与金属碳纳米管层（2）之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层（1）和内金属碳纳米管层（2）的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管（10）的形式。

公开(公告)号：US07790539B2

公开(公告)日：2010-09-07

申请号：US12274977

申请日：2008-11-20

申请人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

发明人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

IPC分类号： H01L21/336

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/949

摘要： A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).

摘要翻译： 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点，能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层（1）的多壁碳纳米管（10）和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层（2） 1）。 金属源电极（3）和金属漏电极（5）与半导体碳纳米管层（1）的两端接触，同时金属栅电极（4）与金属碳纳米管层 2）。 将半导体碳纳米管层（1）与金属碳纳米管层（2）之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层（1）和内金属碳纳米管层（2）的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管（10）的形式。

公开(公告)号：US20070065974A1

公开(公告)日：2007-03-22

申请号：US10570428

申请日：2004-09-07

申请人： Masashi Shiraishi ,  Masafumi Ata

发明人： Masashi Shiraishi ,  Masafumi Ata

IPC分类号： H01L51/40 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L51/0048

摘要： There is provided a method for producing a field effect semiconductor device, e.g., a field effect transistor 6 using carbon nanotubes in a channel layer 5, wherein the method includes the step of subjecting the carbon nanotubes to plasma treatment to change a physical or chemical state of the carbon nanotubes. Thus, there can be provided a method which is advantageous in that the method easily produces a field effect semiconductor device which has a current path, e.g., a channel layer, having carbon nanotubes uniformly dispersed therein, and which is prevented from suffering deterioration of the device characteristics due to the formation of bundles of carbon nanotubes.

摘要翻译： 提供了一种用于制造场效应半导体器件的方法，例如在沟道层5中使用碳纳米管的场效应晶体管6，其中该方法包括使碳纳米管经受等离子体处理以改变物理或化学状态的步骤 的碳纳米管。 因此，可以提供一种方法，其优点在于该方法容易地产生具有电流路径的场效应半导体器件，例如具有均匀分散在其中的碳纳米管的通道层，并且防止其劣化 由于形成碳纳米管束而导致的器件特性。

公开(公告)号：US07037622B2

公开(公告)日：2006-05-02

申请号：US10221812

申请日：2001-03-16

申请人： Eisuke Negishi ,  Masashi Shiraishi ,  Hisashi Kajiura

发明人： Eisuke Negishi ,  Masashi Shiraishi ,  Hisashi Kajiura

IPC分类号： H01M4/58

CPC分类号： B82Y30/00 ,  B01J20/20 ,  B01J20/205 ,  C01B3/0021 ,  D01F9/127 ,  H01M4/242 ,  H01M4/96 ,  H01M8/06 ,  H01M8/10 ,  Y02E60/325

摘要： A hydrogen-storing carbonaceous material is provided. The hydrogen-storing carbonaceous material is obtained by heating a carbonaceous material at lower than about 800° C. before hydrogen is stored under the pressure of hydrogen of about 50 atmospheric pressure or higher. The present invention also provides hydrogen-stored carbonaceous material that is obtained by hydrogen storage in the hydrogen-storing carbonaceous material under the pressure of hydrogen of about 50 atmospheric pressure or higher. This hydrogen-stored carbonaceous material is used for a battery or a fuel cell. The hydrogen-stored carbonaceous material is heated at lower than about 800° C. before the hydrogen is stored under the pressure of hydrogen of about 50 atmospheric pressure or higher, so that the hydrogen-storing carbonaceous material whose hydrogen storage capacity is greatly enhanced can be produced.

摘要翻译： 提供了储氢的碳质材料。 储氢碳质材料通过在氢气约50大气压或更高的氢气储存之前将碳质材料加热至低于约800℃而得到。 本发明还提供了通过在约50大气压或更高的氢气压力下在储氢碳质材料中储氢而获得的储氢碳质材料。 该储氢碳质材料用于电池或燃料电池。 氢储存的碳质材料在氢气约50个大气压或更高的氢气储存之前加热至低于约800℃，从而可以大大提高储氢容量的储氢碳质材料 生产。

公开(公告)号：US20090075407A1

公开(公告)日：2009-03-19

申请号：US12274977

申请日：2008-11-20

申请人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

发明人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

IPC分类号： H01L21/66

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/949

摘要： A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).

摘要翻译： 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点，能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层（1）的多壁碳纳米管（10）和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层（2） 1）。 金属源电极（3）和金属漏电极（5）与半导体碳纳米管层（1）的两端接触，同时金属栅电极（4）与金属碳纳米管层 2）。 将半导体碳纳米管层（1）与金属碳纳米管层（2）之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层（1）和内金属碳纳米管层（2）的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管（10）的形式。

公开(公告)号：US20060205105A1

公开(公告)日：2006-09-14

申请号：US10535927

申请日：2003-11-05

申请人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

发明人： Ryuichiro Maruyama ,  Masafumi Ata ,  Masashi Shiraishi

IPC分类号： H01L21/00

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/949

摘要： A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).

摘要翻译： 微电子器件及其制造方法可以克服由碳分子构成的已知电子器件的缺点，能够提供优于已知器件的性能。 绝缘栅场效应晶体管包括具有外半导体碳纳米管层（1）的多壁碳纳米管（10）和被外半导体碳纳米管层部分覆盖的内金属碳纳米管层（2） 1）。 金属源电极（3）和金属漏电极（5）与半导体碳纳米管层（1）的两端接触，同时金属栅电极（4）与金属碳纳米管层 2）。 将半导体碳纳米管层（1）与金属碳纳米管层（2）之间的间隔用作栅极绝缘层。 包含外半导体碳纳米管层（1）和内金属碳纳米管层（2）的两层选自多壁碳纳米管的碳纳米管层。 这些层被加工成适合用作多壁碳纳米管（10）的形式。

公开(公告)号：US07684157B2

公开(公告)日：2010-03-23

申请号：US11319580

申请日：2005-12-29

申请人： MingGao Yao ,  Masashi Shiraishi ,  YiRu Xie

发明人： MingGao Yao ,  Masashi Shiraishi ,  YiRu Xie

IPC分类号： G11B5/56

CPC分类号： G11B5/4826

摘要： A HGA of the present invention includes a slider; a micro-actuator comprising two thin film PZT pieces to define a notch; a suspension to load the slider and the micro-actuator. The suspension comprises: a flexure having an actuator loading portion with a slot corresponding to the notch of the micro-actuator, and a slider-loading portion to partially hold the slider; and a load beam having a first dimple to support the flexure at a position thereof corresponding to a central area of the slider, and a second dimple extending through both the slot of the flexure and the notch defined by the micro-actuator and toward an leading edge end portion of the slider to form a gap between the slider and the second dimple. The invention also discloses a disk drive unit having the improved HGA.

摘要翻译： 本发明的HGA包括滑块; 微致动器包括两个薄膜PZT片，以限定切口; 悬架装载滑块和微型致动器。 悬架包括：具有致动器加载部分的弯曲部，其具有与微致动器的凹口相对应的槽，以及滑块加载部分，以部分地保持滑块; 以及负载梁，其具有第一凹坑以在其对应于所述滑块的中心区域的位置处支撑所述挠曲;以及第二凹坑，其延伸穿过所述挠曲件的所述槽和由所述微致动器限定的所述凹口，并且朝向引导 滑块的边缘端部，以在滑块和第二凹坑之间形成间隙。 本发明还公开了一种具有改进的HGA的磁盘驱动器单元。

公开(公告)号：US07554773B2

公开(公告)日：2009-06-30

申请号：US11080657

申请日：2005-03-16

申请人： Li Yan Zhu ,  Ming Gao Yao ,  Masashi Shiraishi

发明人： Li Yan Zhu ,  Ming Gao Yao ,  Masashi Shiraishi

IPC分类号： G11B5/58

CPC分类号： G11B5/4853

摘要： A HGA of the invention includes a slider; a micro-actuator to adjust the position of the slider; and a suspension to load the slider and the micro-actuator. The micro-actuator includes two side arms; a load plate for supporting the slider, which is connected with at least one of the side arms; a piezoelectric element connected with the side arms; and a base shaft to couple with the suspension, which is connected with the side arms and positioned between the load plate and the piezoelectric element. The invention also discloses a disk drive unit using such a HGA.

摘要翻译： 本发明的HGA包括滑块; 一个调节滑块位置的微型致动器; 以及用于装载滑块和微致动器的悬架。 微型致动器包括两个侧臂; 用于支撑滑块的负载板，其与至少一个侧臂连接; 与侧臂连接的压电元件; 以及与所述悬架联接的基轴，所述悬架与所述侧臂连接并且位于所述载荷板和所述压电元件之间。 本发明还公开了一种使用这种HGA的磁盘驱动器单元。

公开(公告)号：US07542242B2

公开(公告)日：2009-06-02

申请号：US10959429

申请日：2004-10-07

申请人： Masashi Shiraishi ,  Hiroyoshi Nakajima ,  Ichiro Yagi

发明人： Masashi Shiraishi ,  Hiroyoshi Nakajima ,  Ichiro Yagi

IPC分类号： G11B5/48

CPC分类号： G11B5/486 ,  H05K3/0061 ,  H05K3/328 ,  H05K3/4069 ,  H05K3/44 ,  H05K2201/0215 ,  H05K2201/09554 ,  H05K2203/107

摘要： A suspension includes a flexure constituted by a metal plate member, for supporting a head slider provided with at least one head element, a load beam provided with a top end section and constituted by a metal plate member, for supporting the flexure at the top end section, and an individual FPC member attached to the flexure and the load beam and provided with trace conductors to be electrically connected to the at least one head element of the head slider. The FPC member includes a plurality of via holes provided with metal fillers filled therein, the metal fillers in the respective via holes are welded to the flexure and/or the load beam, and the FPC member is fixed to the flexure and/or the load beam at least by means of the welding.

摘要翻译： 悬架包括由金属板构件构成的挠曲件，用于支撑设置有至少一个头部元件的头部滑块，设置有顶端部分并由金属板构件构成的负载梁，用于在顶端支撑弯曲部 以及附接到挠曲件和负载梁的单独的FPC构件，并且设置有电连接到头滑块的至少一个头元件的迹线导体。 FPC部件包括设置有填充有金属填充物的多个通孔，各通路孔中的金属填充物焊接到挠曲部和/或负载梁上，FPC部件固定在挠曲部和/或负载部 至少通过焊接。