摘要:
A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
摘要:
A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
摘要:
A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
摘要:
A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
摘要:
A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
摘要:
A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
摘要:
A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
摘要:
A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer (1) and the inner metallic carbon nanotube layer (2) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube (10).
摘要:
An electrochemical hydrogen flow rate control system is provided. The system has an electrochemical cell and a hydrogen flow rate control unit. The electrochemical cell includes a first electrode for generating protons (H+), a second electrode for converting the protons generated by said first electrode into hydrogen gas, and a proton conductive solid electrolyte membrane held between said first and second electrodes. The hydrogen flow rate control unit is adapted to generate a specific amount of hydrogen gas on the second electrode side. The proton conductive solid electrolyte membrane is made from a fullerene derivative obtained by introducing proton dissociative groups in carbon atoms of fullerene molecules. Such a control system is operable even in a non-humidified atmosphere and at room temperature and is configurable as lightweight and compact in system design.
摘要:
The present invention relates to a gas pressure regulator including an electrochemical cell (4) having a first electrode (1) for decomposing gas into ions, a second electrode (2) for converting the ions generated in the first electrode (1) into the gas again and an ion conductor (3) sandwiched in between both the electrodes (1) and (2); and a high pressure vessel (5) disposed in one side of the electrochemical cell (4). In this device, the gas is decomposed into the ions in the first electrode (1). The decomposed ions are allowed to pass through the ion conductor (3) sandwiched in between the first electrode (1) and the second electrode (2) and conducted to the second electrode (2) side. The conducted ions are reconverted into the gas in the second electrode (2).