公开(公告)号：US08932554B2

公开(公告)日：2015-01-13

申请号：US14015179

申请日：2013-08-30

申请人： INSERM (Institut National de la Sante et de la Recherche Medicale)

发明人： Jean-Paul Boudou ,  Patrick Curmi

IPC分类号： B01J3/06 ,  C01B31/02 ,  C01C3/00 ,  C01B31/00 ,  C09K11/02 ,  B32B5/16 ,  C01B31/06 ,  C30B33/02 ,  C30B29/04 ,  C09K11/65

CPC分类号： C01B31/065 ,  C01B32/28 ,  C09K11/65 ,  C30B29/04 ,  C30B33/02 ,  Y10S977/775 ,  Y10S977/949 ,  Y10T428/2982

摘要： Method to produce diamonds containing Nitrogen-Vacancy centers from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising: —Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter; —annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° C. and for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 MeV.

摘要翻译： 通过高压和高温工艺生长并含有分离的取代氮的金刚石生产含有氮 - 空位中心的金刚石的方法，包括：通过电子束辐射（12）所述金刚石，使得辐射剂量在1017和1019之间 电子每平方厘米; 在真空中或在惰性气氛中，在高于700℃的温度下放置（14）照射的金刚石并至少持续1小时; 其特征在于，所述电子束具有高于7MeV的加速能量。

公开(公告)号：US20140367727A1

公开(公告)日：2014-12-18

申请号：US14473709

申请日：2014-08-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Dong-Hoon LEE ,  Geon-Wook YOO ,  Nam-Goo CHA ,  Kyung-Wook HWANG

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  B82Y20/00 ,  H01L27/15 ,  H01L33/08 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  Y10S977/762 ,  Y10S977/949 ,  Y10S977/95

摘要： A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

摘要翻译： 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。

公开(公告)号：US08866996B2

公开(公告)日：2014-10-21

申请号：US13327139

申请日：2011-12-15

申请人： Jin Hyun Cho ,  Young Jai Bai

发明人： Jin Hyun Cho ,  Young Jai Bai

IPC分类号： G02F1/133 ,  G09G3/36 ,  G02F1/1333

CPC分类号： G02F1/133382 ,  G09G3/3648 ,  G09G2320/0252 ,  G09G2320/041 ,  Y10S977/742 ,  Y10S977/949

摘要： A liquid crystal display including: a liquid crystal display panel including a thin film transistor substrate and a liquid crystal layer disposed on the thin film transistor substrate; a heat generation unit that is configured to heat the liquid crystal layer; a resistance sensing unit that senses a change in a magnitude of resistance of the heat generation unit; a heat generation unit power controller that decreases a magnitude of power applied to the heat generation unit when the magnitude of resistance of the heat generation unit is equal to or greater than a reference magnitude of resistance; and a power supply unit that supplies power of a designated magnitude to the heat generation unit power controller.

摘要翻译： 一种液晶显示器，包括：液晶显示面板，包括薄膜晶体管基板和设置在所述薄膜晶体管基板上的液晶层; 被配置为加热液晶层的发热单元; 电阻感测单元，其感测所述发热单元的电阻的大小的变化; 发热单元功率控制器，当所述发热体单元的电阻大小等于或大于基准电阻值时，降低施加到所述发热单元的功率的大小; 以及向所述发热单元功率控制器供给指定大小的功率的电源单元。

公开(公告)号：US08574536B2

公开(公告)日：2013-11-05

申请号：US12597984

申请日：2008-05-07

申请人： Jean-Paul Boudou ,  Patrick Curmi

发明人： Jean-Paul Boudou ,  Patrick Curmi

IPC分类号： C01C3/00 ,  C01B31/00 ,  B01J3/08

CPC分类号： C01B31/065 ,  C01B32/28 ,  C09K11/65 ,  C30B29/04 ,  C30B33/02 ,  Y10S977/775 ,  Y10S977/949 ,  Y10T428/2982

摘要： Method to produce diamonds containing Nitrogen-Vacancy centers from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising: —Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter; —annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° C. and for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 MeV.

摘要翻译： 通过高压和高温过程生长并含有分离的取代氮的金刚石生产含有氮 - 空位中心的金刚石的方法，包括： - 通过电子束辐射（12）所述金刚石，使得照射剂量在1017和1019之间 电子每平方厘米; 在真空中或在惰性气氛中，在高于700℃的温度下放置（14）照射的金刚石并至少持续1小时; 其特征在于，所述电子束具有高于7MeV的加速能量。

公开(公告)号：US20130113011A1

公开(公告)日：2013-05-09

申请号：US13808923

申请日：2011-07-19

申请人： Partha S. Dutta

发明人： Partha S. Dutta

IPC分类号： H01L33/58 ,  H01L33/00 ,  H01L33/44

CPC分类号： H01L33/58 ,  B82Y30/00 ,  C09K11/7731 ,  H01L33/005 ,  H01L33/44 ,  H01L33/502 ,  H01L33/504 ,  H01L2933/0041 ,  Y02B20/181 ,  Y10S977/774 ,  Y10S977/949

摘要： A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography layer, and drawing out the crystallography layer and allowing the crystallography layer to cool to form the down-conversion substrate. A light system includes an excitation source for emitting short wavelength primary emissions; and a down-conversion substrate disposed in the path of at least some of the primary emissions from the excitation source to convert at least a portion of the primary emissions into longer-wavelength secondary emissions, wherein the substrate includes one or more crystallography layers, wherein each crystallography layer includes one or more phosphor materials, and optionally at least one activator. Down-converted secondary light may be produced by the system.

摘要翻译： 一种制造用于光系统的下转换衬底的方法包括：形成包括一种或多种磷光体材料的第一结晶层，以及任选地将至少一种激活剂施加到晶体层，在高温下加热晶体层以促进 在晶体层中晶体生长，并绘出结晶层并使晶体层冷却以形成下转换衬底。 光系统包括用于发射短波长一次发射的激发源; 以及下转换衬底，其布置在来自激发源的至少一些初级发射的路径中，以将至少一部分初级发射转换成更长波长的二次发射，其中衬底包括一个或多个结晶层，其中 每个结晶层包括一种或多种磷光体材料，以及任选的至少一种激活剂。 下变频二次光可以由系统产生。

公开(公告)号：US20120154706A1

公开(公告)日：2012-06-21

申请号：US13327139

申请日：2011-12-15

申请人： Jin Hyun Cho ,  Young Jai Bai

发明人： Jin Hyun Cho ,  Young Jai Bai

IPC分类号： G02F1/13357 ,  G02F1/1333 ,  G02F1/133

CPC分类号： G02F1/133382 ,  G09G3/3648 ,  G09G2320/0252 ,  G09G2320/041 ,  Y10S977/742 ,  Y10S977/949

摘要： A liquid crystal display including: a liquid crystal display panel including a thin film transistor substrate and a liquid crystal layer disposed on the thin film transistor substrate; a heat generation unit that is configured to heat the liquid crystal layer; a resistance sensing unit that senses a change in a magnitude of resistance of the heat generation unit; a heat generation unit power controller that decreases a magnitude of power applied to the heat generation unit when the magnitude of resistance of the heat generation unit is equal to or greater than a reference magnitude of resistance; and a power supply unit that supplies power of a designated magnitude to the heat generation unit power controller.

摘要翻译： 一种液晶显示器，包括：液晶显示面板，包括薄膜晶体管基板和设置在所述薄膜晶体管基板上的液晶层; 被配置为加热液晶层的发热单元; 电阻感测单元，其感测所述发热单元的电阻的大小的变化; 发热单元功率控制器，当所述发热体单元的电阻大小等于或大于基准电阻值时，降低施加到所述发热单元的功率的大小; 以及向所述发热单元功率控制器供给指定大小的功率的电源单元。

公开(公告)号：US08084337B2

公开(公告)日：2011-12-27

申请号：US12734252

申请日：2008-10-27

申请人： Lars Samuelson ,  Jonas Ohlsson ,  Thomas Mårtensson ,  Patrik Svensson

发明人： Lars Samuelson ,  Jonas Ohlsson ,  Thomas Mårtensson ,  Patrik Svensson

IPC分类号： H01L21/205 ,  H01L29/12 ,  H01L29/20

CPC分类号： H01L29/0665 ,  B81C1/00111 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L33/18 ,  Y10S438/946 ,  Y10S438/974 ,  Y10S977/721 ,  Y10S977/762 ,  Y10S977/815 ,  Y10S977/89 ,  Y10S977/949

摘要： The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.

摘要翻译： 本发明涉及在Si衬底（3）上III-V族半导体纳米线（2）的生长。 受控的垂直纳米线生长通过在纳米线生长之前采取的步骤来实现，将III族或V族原子提供给Si衬底的（111）表面以提供III族或V 5族表面终止 （4）。 还提出了纳米结构的器件，其包括以符合预定的器件布局的有序图案生长在Si衬底（3）的（111）表面上并从其突出的多个对准的III-V半导体纳米线（2）。

公开(公告)号：US20100252808A1

公开(公告)日：2010-10-07

申请号：US12734252

申请日：2008-10-27

申请人： Lars Samuelson ,  Jonas Ohlsson ,  Thomas Mårtensson ,  Patrik Svensson

发明人： Lars Samuelson ,  Jonas Ohlsson ,  Thomas Mårtensson ,  Patrik Svensson

IPC分类号： H01L33/06 ,  C30B23/04 ,  H01L29/66

CPC分类号： H01L29/0665 ,  B81C1/00111 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L33/18 ,  Y10S438/946 ,  Y10S438/974 ,  Y10S977/721 ,  Y10S977/762 ,  Y10S977/815 ,  Y10S977/89 ,  Y10S977/949

摘要： The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.

摘要翻译： 本发明涉及在Si衬底（3）上III-V族半导体纳米线（2）的生长。 受控的垂直纳米线生长通过在纳米线生长之前采取的步骤来实现，将III族或V族原子提供给Si衬底的（111）表面以提供III族或V 5族表面终止 （4）。 还提出了纳米结构的器件，其包括以符合预定的器件布局的有序图案生长在Si衬底（3）的（111）表面上并从其突出的多个对准的III-V半导体纳米线（2）。

公开(公告)号：US07794793B2

公开(公告)日：2010-09-14

申请号：US11949564

申请日：2007-12-03

申请人： Kangning Liang

发明人： Kangning Liang

IPC分类号： B05D3/00 ,  B05D5/12 ,  B05D3/10

CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469 ,  Y10S977/949

摘要： A method for preparation of carbon nanotubes (CNTs) bundles for use in field emission devices (FEDs) includes forming a plurality of carbon nanotubes on a substrate, contacting the carbon nanotubes with a polymer composition comprising a polymer and a solvent, and removing at least a portion of the solvent so as to form a solid composition from the carbon nanotubes and the polymer to form a carbon nanotube bundle having a base with a periphery, and an elevated central region where, along the periphery of the base, the carbon nanotubes slope toward the central region.

摘要翻译： 一种用于场致发射器件（FED）中用于制备碳纳米管（CNT）束的方法包括在基片上形成多个碳纳米管，使碳纳米管与包含聚合物和溶剂的聚合物组合物接触，并至少除去 溶剂的一部分，以便从碳纳米管和聚合物形成固体组合物以形成具有周边基体的碳纳米管束，以及升高的中心区域，沿着基底的周边，碳纳米管的斜面 朝中央地区。

公开(公告)号：US07737414B2

公开(公告)日：2010-06-15

申请号：US11924692

申请日：2007-10-26

申请人： Hong-Shi Kuo ,  Ing-Shouh Hwang ,  Tien T. Tsong ,  Tsu-Yi Fu

发明人： Hong-Shi Kuo ,  Ing-Shouh Hwang ,  Tien T. Tsong ,  Tsu-Yi Fu

IPC分类号： H01J27/00 ,  H01J27/24 ,  H01T23/00 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16

CPC分类号： G01Q60/16 ,  C21D9/26 ,  C21D2201/04 ,  C22F1/14 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3056 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2209/0226 ,  H01J2237/06 ,  H01J2237/08 ,  H01J2237/0807 ,  H01J2237/3114 ,  Y10S977/848 ,  Y10S977/90 ,  Y10S977/949 ,  Y10S977/95 ,  Y10T428/12389

摘要： A method for preparing an iridium tip with atomic sharpness. The method includes tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also disclosed is an iridium needle having a pyramidal structure which terminates with a small number of atoms prepared by the methods.

摘要翻译： 一种制备原子锐度的铱尖的方法。 所述方法包括将铱丝丝逐渐变细为针状，并在氧气氛中加热铱针。 还公开了具有锥形结构的铱针，其以通过该方法制备的少量原子终止。