利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.048 秒)

    Interferon alpha antibodies and their uses
    11.
    发明授权
    Interferon alpha antibodies and their uses 有权
    干扰素α抗体及其用途

    公开(公告)号：US08025882B2

    公开(公告)日：2011-09-27

    申请号：US12551250

    申请日：2009-08-31

    申请人： Alison J. Witte ,  Denise Williams ,  Josephine M. Cardarelli ,  David J. King ,  David B. Passmore

    发明人： Alison J. Witte ,  Denise Williams ,  Josephine M. Cardarelli ,  David J. King ,  David B. Passmore

    IPC分类号： A61K39/395

    CPC分类号： C07K16/249 ,  A61K51/1021 ,  A61K2039/505 ,  C07K16/24 ,  C07K2317/21 ,  C07K2317/55 ,  C07K2317/56 ,  C07K2317/565 ,  C07K2317/74 ,  C07K2317/76

    摘要： The present invention provides isolated anti-interferon alpha monoclonal antibodies, particularly human monoclonal antibodies, that inhibit the biological activity of multiple interferon (IFN) alpha subtypes but do not substantially inhibit the biological activity of IFN alpha 21 or the biological activity of either IFN beta or IFN omega. Immunoconjugates, bispecific molecules and pharmaceutical compositions comprising the antibodies of the invention are also provided. The invention also provides methods for inhibiting the biological activity of IFN alpha using the antibodies of the invention, as well as methods of treating disease or disorders mediated by IFN alpha, such as autoimmune diseases, transplant rejection and graft versus host disease, by administering the antibodies of the invention.

    摘要翻译： 本发明提供分离的抗干扰素α单克隆抗体，特别是人单克隆抗体，其抑制多种干扰素（IFN）α亚型的生物学活性，但基本上不抑制IFNα21的生物活性或IFNβ的生物学活性 或IFNγ。 还提供了免疫偶联物，双特异性分子和包含本发明抗体的药物组合物。 本发明还提供了使用本发明的抗体抑制IFNα的生物学活性的方法，以及通过施用本发明的抗体来治疗由IFNα介导的疾病或病症的方法，例如自身免疫疾病，移植排斥反应和移植物抗宿主病 本发明的抗体。

    CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD
    13.
    发明申请
    CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD 有权
    电流注入/隧道发光装置及方法

    公开(公告)号：US20090212278A1

    公开(公告)日：2009-08-27

    申请号：US12393029

    申请日：2009-02-25

    申请人： Robbie J. Jorgenson ,  David J. King

    发明人： Robbie J. Jorgenson ,  David J. King

    IPC分类号： H01L33/00 ,  H05K13/00

    CPC分类号： H01L33/105 ,  H01L33/04 ,  H01L33/06 ,  H01L33/405 ,  Y10T29/5313

    摘要： An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.

    摘要翻译： 一种用于制作它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。

    ANTIBODIES DIRECTED AGAINST INTERLEUKIN-33 (IL-33)
    15.
    发明申请
    ANTIBODIES DIRECTED AGAINST INTERLEUKIN-33 (IL-33) 审中-公开
    针对白细胞介素-33（IL-33）的抗体

    公开(公告)号：US20160333090A1

    公开(公告)日：2016-11-17

    申请号：US15110724

    申请日：2015-01-09

    申请人： Robert A. HORLICK ,  David J. KING ,  Andrew John MCKNIGHT ,  ANAPTYSBIO,INC.

    发明人： Robert A. Horlick ,  David J. King ,  Andrew John MCKNIGHT

    IPC分类号： C07K16/24

    CPC分类号： C07K16/244 ,  C07K2317/56 ,  C07K2317/565 ,  C07K2317/76 ,  C07K2317/92

    摘要： The invention relates to an isolated immunoglobulin heavy chain polypeptide and an isolated immunoglobulin light chain polypeptide that bind to interleukin-33 (IL-33). The invention provides an IL-33-binding agent that comprises the aforementioned immunoglobulin heavy chain polypeptide and immunoglobulin light chain polypeptide. The invention also provides related vectors, compositions, and methods of using the IL-33-binding agent to treat a disorder in a mammal that is responsive to IL-33 inhibition.

    摘要翻译： 本发明涉及分离的免疫球蛋白重链多肽和结合白细胞介素-33（IL-33）的分离的免疫球蛋白轻链多肽。 本发明提供了包含上述免疫球蛋白重链多肽和免疫球蛋白轻链多肽的IL-33-结合剂。 本发明还提供了使用IL-33-结合剂治疗对IL-33抑制有反应的哺乳动物疾病的相关载体，组合物和方法。

    Method of forming current-injecting/tunneling light-emitting device
    16.
    发明授权
    Method of forming current-injecting/tunneling light-emitting device 有权
    形成电流注入/隧道发光器件的方法

    公开(公告)号：US08865492B2

    公开(公告)日：2014-10-21

    申请号：US12956640

    申请日：2010-11-30

    申请人： Robbie J. Jorgenson ,  David J. King

    发明人： Robbie J. Jorgenson ,  David J. King

    IPC分类号： H01L33/60 ,  H01L21/20 ,  H01L33/40 ,  H01L33/10 ,  H01L33/06 ,  H01L33/04

    CPC分类号： H01L33/105 ,  H01L33/04 ,  H01L33/06 ,  H01L33/405 ,  Y10T29/5313

    摘要： An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.

    摘要翻译： 一种用于制造它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。

    Current-injecting/tunneling light-emitting device and method
    17.
    发明授权
    Current-injecting/tunneling light-emitting device and method 有权
    电流注入/隧道发光装置及方法

    公开(公告)号：US07842939B2

    公开(公告)日：2010-11-30

    申请号：US12393029

    申请日：2009-02-25

    申请人： Robbie J. Jorgenson ,  David J. King

    发明人： Robbie J. Jorgenson ,  David J. King

    IPC分类号： H01L29/06

    CPC分类号： H01L33/105 ,  H01L33/04 ,  H01L33/06 ,  H01L33/405 ,  Y10T29/5313

    摘要： An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.

    摘要翻译： 一种用于制作它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。