Abstract:
The invention relates to a humidity sensor including, as a humidity absorbent layer, a polymer layer including a blend including a first polyamide and a second polyamide, where the said second polyamide includes, in its repetitive units, a number of carbon atoms greater than that of the repetitive units of the first polyamide.
Abstract:
A pressure sensor micromachined by using microelectronics technologies includes a cavity hermetically sealed on one side by a silicon substrate and on the other side by a diaphragm that is configured to be formed under the effect of the pressure outside the cavity. The sensor includes at least one resistance strain gage fastened to the diaphragm and has resistance that varies as a function of the deformation of the diaphragm. The diaphragm is fastened to the resistance strain gages. The gages are located inside the sealed cavity. The diaphragm has an insulting layer deposited on a sacrificial layer and may cover integrated measurement circuits in the silicon substrate.
Abstract:
A humidity sensor of capacitive type, a device for detecting or measuring humidity including the sensor, and a method to fabricate the sensor. The humidity sensor includes at least one nanoporous dielectric material positioned between at least one first electrode of a capacitor and at least one second electrode of the capacitor.
Abstract:
A cavity is etched in a substrate and opens out onto the surface of the substrate facing the suspended element (1). The cavity has at least one broader zone having a cross-section which is greater than the cross-section of the cavity at said surface. A base (4) of the pillar (2), of complementary shape to the cavity, is buried in the cavity. The base (4) of the pillar (2) can form a dovetail assembly with the cavity of the substrate. This assembly is obtained by deposition, on a surface of the substrate, of a sacrificial layer and etching, in the sacrificial layer, of a hole passing through the sacrificial layer and reaching the surface of the substrate. The substrate is then etched, in the extension of the hole, so as to form the cavity of the substrate. Then a material designed to form the pillar (2) is deposited in the cavity and on the walls of the hole.
Abstract:
The invention relates to pressure sensors that are micromachined using microelectronics technologies. The sensor provided by the invention comprises a cavity (V) hermetically sealed on one side by a silicon substrate (40) and on the other side by a diaphragm (58) that can be formed under the effect of the pressure outside the cavity, the sensor having at least one resistance strain gage (54, 56) fastened to the diaphragm and having resistance that varies as a function of the deformation of the diaphragm. The diaphragm, preferably made of silicon nitride, is fastened to the resistance strain gages. The gages are located beneath the diaphragm inside the sealed cavity (V). It is not necessary to recess the substrate to produce the cavity: the diaphragm is formed by depositing an insulting layer on a sacrificial layer, for example made of a polyamide; it may cover integrated measurement circuits in the silicon substrate.