Pressure sensor with resistance strain gages
    12.
    发明授权
    Pressure sensor with resistance strain gages 有权
    带电阻应变计的压力传感器

    公开(公告)号:US08393223B2

    公开(公告)日:2013-03-12

    申请号:US12279396

    申请日:2007-01-26

    CPC classification number: G01L9/0044 G01L9/0055 Y10T29/49103

    Abstract: A pressure sensor micromachined by using microelectronics technologies includes a cavity hermetically sealed on one side by a silicon substrate and on the other side by a diaphragm that is configured to be formed under the effect of the pressure outside the cavity. The sensor includes at least one resistance strain gage fastened to the diaphragm and has resistance that varies as a function of the deformation of the diaphragm. The diaphragm is fastened to the resistance strain gages. The gages are located inside the sealed cavity. The diaphragm has an insulting layer deposited on a sacrificial layer and may cover integrated measurement circuits in the silicon substrate.

    Abstract translation: 通过使用微电子技术微加工的压力传感器包括在一侧由硅衬底气密密封的腔体,另一侧由隔膜构成,该隔膜被构造成在空腔外部的压力作用下形成。 传感器包括至少一个紧固到隔膜的电阻应变计,并具有作为隔膜变形的函数而变化的阻力。 隔膜固定在电阻应变计上。 量具位于密封腔内。 隔膜具有沉积在牺牲层上的绝缘层,并且可以覆盖硅衬底中的集成测量电路。

    Micro-mechanical device comprising suspended element which is connected to a support by means of a pier and producing method thereof
    14.
    发明授权
    Micro-mechanical device comprising suspended element which is connected to a support by means of a pier and producing method thereof 失效
    微机械装置,其包括通过码头连接到支撑件的悬挂元件及其制造方法

    公开(公告)号:US07671429B2

    公开(公告)日:2010-03-02

    申请号:US10567865

    申请日:2004-08-24

    Abstract: A cavity is etched in a substrate and opens out onto the surface of the substrate facing the suspended element (1). The cavity has at least one broader zone having a cross-section which is greater than the cross-section of the cavity at said surface. A base (4) of the pillar (2), of complementary shape to the cavity, is buried in the cavity. The base (4) of the pillar (2) can form a dovetail assembly with the cavity of the substrate. This assembly is obtained by deposition, on a surface of the substrate, of a sacrificial layer and etching, in the sacrificial layer, of a hole passing through the sacrificial layer and reaching the surface of the substrate. The substrate is then etched, in the extension of the hole, so as to form the cavity of the substrate. Then a material designed to form the pillar (2) is deposited in the cavity and on the walls of the hole.

    Abstract translation: 在衬底中蚀刻空腔,并向面向悬浮元件(1)的衬底表面开口。 空腔具有至少一个较宽的区域,该区域的横截面大于所述表面处空腔的横截面。 柱体(2)的与空腔互补形状的基座(4)被埋在空腔中。 支柱(2)的基部(4)可以形成具有基底的空腔的燕尾组件。 该组件通过在牺牲层上沉积在衬底的表面上并在牺牲层中蚀刻穿过牺牲层并到达衬底表面的孔而获得。 然后在孔的延伸部中蚀刻衬底,以形成衬底的空腔。 然后将设计成形成柱(2)的材料沉积在空腔中和孔的壁上。

    PRESSURE SENSOR WITH RESISTANCE STRAIN GAGES
    15.
    发明申请
    PRESSURE SENSOR WITH RESISTANCE STRAIN GAGES 有权
    具有电阻应变压力的压力传感器

    公开(公告)号:US20100031752A1

    公开(公告)日:2010-02-11

    申请号:US12279396

    申请日:2007-01-26

    CPC classification number: G01L9/0044 G01L9/0055 Y10T29/49103

    Abstract: The invention relates to pressure sensors that are micromachined using microelectronics technologies. The sensor provided by the invention comprises a cavity (V) hermetically sealed on one side by a silicon substrate (40) and on the other side by a diaphragm (58) that can be formed under the effect of the pressure outside the cavity, the sensor having at least one resistance strain gage (54, 56) fastened to the diaphragm and having resistance that varies as a function of the deformation of the diaphragm. The diaphragm, preferably made of silicon nitride, is fastened to the resistance strain gages. The gages are located beneath the diaphragm inside the sealed cavity (V). It is not necessary to recess the substrate to produce the cavity: the diaphragm is formed by depositing an insulting layer on a sacrificial layer, for example made of a polyamide; it may cover integrated measurement circuits in the silicon substrate.

    Abstract translation: 本发明涉及使用微电子技术微加工的压力传感器。 本发明提供的传感器包括一个由硅衬底(40)在一侧气密密封的腔(V),另一侧由隔膜(58)形成,该隔膜可在空腔外部压力的作用下形成, 传感器具有紧固到隔膜的至少一个电阻应变计(54,56),并具有作为膜片的变形的函数而变化的电阻。 优选由氮化硅制成的隔膜紧固到电阻应变计上。 量具位于密封腔(V)内的隔膜下方。 没有必要使衬底凹陷以产生空腔:通过在例如由聚酰胺制成的牺牲层上沉积绝缘层来形成隔膜; 它可以覆盖硅衬底中的集成测量电路。

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