Abstract:
A real-time management method for manufacturing management and yield rate analysis integration. A plurality of yield rates relating to wafer products are summed and averaged for a historical yield rate. Multiple representational inline QC parameters are selected. A statistical process is implemented and, if no extreme value and collinear parameter exists and if analysis results satisfy normal distribution, multiple optimum inline QC parameters are selected from the representational inline QC parameters. Weights of each optimum inline QC parameter are calculated. A predicted yield rate is calculated according to the historical yield rate, weights, and a plurality of measurement and target values relating to the wafer products.
Abstract:
A method for automatically controlling defect-specification in a semiconductor manufacturing process is provided. The method provides a module to detect a position, number, size, and intensity signals of defects on a processed patterned wafer. The module further compares the patterned wafer with a normal wafer to preliminarily classify the patterned wafer and creates a defect map. Then, a defect management system is provided to execute a spatial pattern recognition procedure to determine whether or not the corresponding special pattern can be recognized. Finally, messages will be automatically sent by the defect management system to inform related e-mail accounts according to results of the recognition of the special pattern.
Abstract:
An exemplary buffering apparatus for buffering a multi-partition video/image bitstream which transmits a plurality of compressed frames each having a plurality of partitions includes a first bitstream buffer and a second bitstream buffer. The first bitstream buffer is arranged to buffer data of a first partition of the partitions of a specific compressed frame. The second bitstream buffer is arranged to buffer data of a second partition of the partitions of the specific compressed frame.
Abstract:
A real-time management method for manufacturing management and yield rate analysis integration. A plurality of yield rates relating to wafer products are summed and averaged for a historical yield rate. Multiple representational inline QC parameters are selected. A statistical process is implemented and, if no extreme value and collinear parameter exists and if analysis results satisfy normal distribution, multiple optimum inline QC parameters are selected from the representational inline QC parameters. Weights of each optimum inline QC parameter are calculated. A predicted yield rate is calculated according to the historical yield rate, weights, and a plurality of measurement and target values relating to the wafer products.
Abstract:
A method of forming a semiconductor device having reduced interconnect-line parasitic capacitance is provided. The method includes the following steps. First, a substrate is provided and a plurality of interconnect lines are formed on the substrate. A barrier layer is then formed. Next, the barrier layer is hardened and thinned so as to make the barrier layer having a thin-film attribute. Following that, a separation layer is formed by filling the space between and above the interconnect lines with a dielectric. Then, the dielectric is foamed. After that, an insulating layer is formed. Finally, the dielectric is condensed such that air gaps are formed in the separation layer.