公开(公告)号：US20220340442A1

公开(公告)日：2022-10-27

申请号：US17860678

申请日：2022-07-08

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masatoshi SHIBATA

IPC: C01G15/00 ,  C04B35/50 ,  C23C14/34 ,  C04B35/01 ,  C04B35/44

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X

公开(公告)号：US20210343876A1

公开(公告)日：2021-11-04

申请号：US17264650

申请日：2019-08-01

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Kenichi SASAKI ,  Atsushi YAO

IPC: H01L29/786 ,  C23C14/34 ,  C01G15/00

Abstract: A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement. (InxGayAlz)2O3  (2) In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.
31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

公开(公告)号：US20200052130A1

公开(公告)日：2020-02-13

申请号：US16482226

申请日：2018-01-31

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Masatoshi SHIBATA

IPC: H01L29/786 ,  C23C14/08 ,  H01L21/203 ,  H01L27/12 ,  C23C14/34

Abstract: A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu—K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

公开(公告)号：US20190177176A1

公开(公告)日：2019-06-13

申请号：US16325170

申请日：2017-08-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masatoshi SHIBATA

IPC: C01G15/00 ,  C04B35/50 ,  C23C14/34

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X

公开(公告)号：US20130234134A1

公开(公告)日：2013-09-12

申请号：US13868307

申请日：2013-04-23

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Koki Yano ,  Shigekazu Tomai ,  Masashi Kasami ,  Hirokazu Kawashima

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742

Abstract: A thin film transistor including a gats electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.

Abstract translation: 一种薄膜晶体管，包括：封口电极，栅极绝缘膜，与栅极绝缘膜接触的氧化物半导体膜，以及连接到氧化物半导体膜并与其间的沟道部分分离的源极和漏极，其中 氧化物半导体膜包括包含氢元素的结晶铟氧化物，并且氧化物半导体膜中包含的氢元素的含量相对于形成氧化物半导体膜的所有元素为0.1at％至5at％。

公开(公告)号：US20210355033A1

公开(公告)日：2021-11-18

申请号：US17358411

申请日：2021-06-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Futoshi UTSUNO ,  Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Mami ITOSE

IPC: C04B35/01 ,  C04B35/626 ,  C04B35/64 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

公开(公告)号：US20210309535A1

公开(公告)日：2021-10-07

申请号：US17264622

申请日：2019-08-01

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Kenichi SASAKI ,  Emi KAWASHIMA ,  Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Atsushi YAO

IPC: C01G15/00

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

公开(公告)号：US20200325072A1

公开(公告)日：2020-10-15

申请号：US16096641

申请日：2017-04-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Futoshi UTSUNO ,  Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Mami ITOSE

IPC: C04B35/01 ,  C04B35/626 ,  C04B35/64 ,  C23C14/34 ,  C23C14/08 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

公开(公告)号：US20190218145A1

公开(公告)日：2019-07-18

申请号：US16310388

申请日：2017-06-16

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Motohiro TAKESHIMA

IPC: C04B35/01 ,  C04B35/626 ,  C04B35/64 ,  C23C14/34 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: C04B35/01 ,  C04B35/6261 ,  C04B35/64 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/764 ,  C23C14/34 ,  C23C14/3407 ,  H01B1/08 ,  H01B5/14 ,  H01B13/00 ,  H01L21/02554 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

公开(公告)号：US20180219098A1

公开(公告)日：2018-08-02

申请号：US15748356

申请日：2016-07-29

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Futoshi UTSUNO ,  Yuki TSURUMA ,  Shigekazu TOMAI ,  Kazuaki EBATA

IPC: H01L29/786 ,  C01G15/00 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  C30B1/02 ,  C30B29/16 ,  H01L29/24 ,  H01L29/04 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/00 ,  C01P2002/54 ,  C01P2002/70 ,  C01P2004/61 ,  C01P2006/40 ,  C23C14/08 ,  C23C14/086 ,  C23C14/34 ,  C23C14/5806 ,  C30B1/023 ,  C30B29/16 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969

Abstract: A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.