公开(公告)号：US20160197202A1

公开(公告)日：2016-07-07

申请号：US14912815

申请日：2014-08-08

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/47 ,  H01L29/66969 ,  H01L29/861

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Abstract translation: 具有硅（Si）衬底，氧化物半导体层和肖特基电极层的肖特基势垒二极管元件，其中所述氧化物半导体层包括具有3.0eV以上至5.6eV带隙的多晶和/或非晶氧化物半导体， 减。

公开(公告)号：US20210355033A1

公开(公告)日：2021-11-18

申请号：US17358411

申请日：2021-06-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Futoshi UTSUNO ,  Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Mami ITOSE

IPC: C04B35/01 ,  C04B35/626 ,  C04B35/64 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

公开(公告)号：US20160211386A1

公开(公告)日：2016-07-21

申请号：US14912800

申请日：2014-08-08

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/267 ,  H01L29/47

Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

Abstract translation: 肖特基势垒二极管元件包括n型或p型硅（Si）衬底，氧化物半导体层和肖特基电极层，所述氧化物半导体层包括含有镓（Ga）的多晶氧化物中的一种或两种 主要成分和包含镓（Ga）作为主要成分的无定形氧化物。

公开(公告)号：US20220199784A1

公开(公告)日：2022-06-23

申请号：US17598817

申请日：2020-03-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Emi KAWASHIMA ,  Kazuyoshi INOUE ,  Masashi OYAMA ,  Masatoshi SHIBATA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/786 ,  H01L29/66

Abstract: A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 μm to 0.5 μm.

公开(公告)号：US20160343554A1

公开(公告)日：2016-11-24

申请号：US15107993

申请日：2014-12-18

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Kazuyoshi INOUE ,  Kazuaki EBATA ,  Masatoshi SHIBATA ,  Futoshi UTSUNO ,  Yuki TSURUMA ,  Yu ISHIHARA

IPC: H01J37/34 ,  C23C14/34 ,  H01L29/786 ,  C23C14/08 ,  C04B35/01 ,  C04B35/64

CPC classification number: H01J37/3429 ,  C04B35/01 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/762 ,  C04B2235/764 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide sintered body comprising a bixbyite phase composed of In2O3 and an A3B5O12 phase (wherein A is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and B is one or more elements selected from the group consisting of Al and Ga).

Abstract translation: 一种氧化物烧结体，包括由In 2 O 3和A 3 B 5 O 12相构成的双相晶相（其中A是选自Sc，Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb中的一种或多种元素 ，Dy，Ho，Er，Tm，Yb和Lu，B是选自Al和Ga的一种或多种元素）。

公开(公告)号：US20210309535A1

公开(公告)日：2021-10-07

申请号：US17264622

申请日：2019-08-01

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Kenichi SASAKI ,  Emi KAWASHIMA ,  Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Atsushi YAO

IPC: C01G15/00

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

公开(公告)号：US20200325072A1

公开(公告)日：2020-10-15

申请号：US16096641

申请日：2017-04-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Futoshi UTSUNO ,  Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Mami ITOSE

IPC: C04B35/01 ,  C04B35/626 ,  C04B35/64 ,  C23C14/34 ,  C23C14/08 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

公开(公告)号：US20190218145A1

公开(公告)日：2019-07-18

申请号：US16310388

申请日：2017-06-16

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Motohiro TAKESHIMA

IPC: C04B35/01 ,  C04B35/626 ,  C04B35/64 ,  C23C14/34 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: C04B35/01 ,  C04B35/6261 ,  C04B35/64 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/764 ,  C23C14/34 ,  C23C14/3407 ,  H01B1/08 ,  H01B5/14 ,  H01B13/00 ,  H01L21/02554 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

公开(公告)号：US20170263786A1

公开(公告)日：2017-09-14

申请号：US15605779

申请日：2017-05-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/26 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/47 ,  H01L29/66969 ,  H01L29/861

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

公开(公告)号：US20170141240A1

公开(公告)日：2017-05-18

申请号：US15392540

申请日：2016-12-28

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/04 ,  H01L29/267 ,  H01L29/16 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/267 ,  H01L29/47

Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.