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公开(公告)号：US20170297895A1
公开(公告)日：2017-10-19
申请号：US15097808
申请日：2016-04-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Mohsin Nawaz , Alfons Dehe , Heiko Froehlich , Alessia Scire , Steffen Bieselt
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81C1/00166 , B81C1/00182 , B81C2201/013
Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.
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公开(公告)号：US20170015546A1
公开(公告)日：2017-01-19
申请号：US15208975
申请日：2016-07-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC classification number: B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
Abstract translation: 本公开涉及一种集成半导体器件，包括半导体衬底; 形成在半导体衬底中的腔; 所述半导体衬底的传感器部分经由所述半导体衬底和所述传感器部分互连的所述半导体衬底的悬置部分在所述空腔的一侧偏转地悬挂在所述空腔中，其中所述悬架部分沿着所述腔的侧面的延伸为 小于腔的所述侧的延伸部。
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公开(公告)号：US09136328B2
公开(公告)日：2015-09-15
申请号：US13648170
申请日：2012-10-09
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Alessia Scire , Steffen Bieselt
IPC: H01L21/76 , H01L29/06 , H01L21/324 , H01L29/78 , B81C1/00
CPC classification number: H01L21/764 , B81B2203/0315 , B81C1/00047 , B81C2201/0116 , H01L21/3247 , H01L21/7624 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/7833
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在衬底内形成第一空腔。 第一空腔设置在基板的一部分下方。 该方法还包括在第一腔内形成第一支柱以支撑衬底的该部分。
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14.发明申请公开(公告)号：US20150115226A1
公开(公告)日：2015-04-30
申请号：US14064302
申请日：2013-10-28
Applicant: Infineon Technologies Dresden GmbH
Inventor： Alessia Scire , Dieter Kaiser , Tarja Hauck , Frank Zschorlich
CPC classification number: H01L51/56 , H01L27/288 , H01L27/3276 , H01L31/0224 , H01L31/02327 , H01L31/16 , H01L51/5275
Abstract: According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein the first region of the grating structure includes amorphous silicon; and wherein the second region of the grating structure includes a material having a refractive index different from the refractive index of the amorphous silicon.
Abstract translation: 根据各种实施例，可以提供光电子部件，所述光电子部件包括：设置在载体中的至少一个和载体中的至少一个的电极结构; 以及设置在所述电极结构上的光栅结构，所述光栅结构至少包括第一区域和第二区域，其中所述光栅结构的所述第一区域包括非晶硅; 并且其中所述光栅结构的第二区域包括具有与所述非晶硅的折射率不同的折射率的材料。
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公开(公告)号：US10580663B2
公开(公告)日：2020-03-03
申请号：US15695088
申请日：2017-09-05
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Steffen Bieselt , Alessia Scire
Abstract: A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. In a further step, the method comprises forming a support structure having a support structure material different from the semiconductor substrate material to close the opening at least partially by mechanically connecting the main surface area of the semiconductor substrate material with the bottom of the cavity. Furthermore, the method comprises a step of forming a lamella structure in the main surface area above the cavity such that the lamella structure is held spaced apart from the bottom of the cavity by the support structure.
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Patent Agency Ranking
公开(公告)号：US10544037B2
公开(公告)日：2020-01-28
申请号：US15875068
申请日：2018-01-19
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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17.发明授权公开(公告)号：US10170497B2
公开(公告)日：2019-01-01
申请号：US15899437
申请日：2018-02-20
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Alessia Scire , Steffen Bieselt , Franz Hirler , Anton Mauder , Wolfgang Scholz , Hans-Joachim Schulze , Francisco Javier Santos Rodriguez
IPC: H05K1/02 , H01L27/12 , H05K1/18 , H05K3/30 , H01L21/762 , H01L21/768 , H01L21/8234 , H01L21/761 , H01L21/764 , H01L29/739 , H01L29/78
Abstract: According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.
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公开(公告)号：US20180155188A1
公开(公告)日：2018-06-07
申请号：US15875068
申请日：2018-01-19
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC classification number: B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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19.发明授权公开(公告)号：US09929181B2
公开(公告)日：2018-03-27
申请号：US15375277
申请日：2016-12-12
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Alessia Scire , Steffen Bieselt , Franz Hirler , Anton Mauder , Wolfgang Scholz , Hans-Joachim Schulze , Francisco Javier Santos Rodriguez
IPC: H01L21/76 , H01L27/12 , H01L21/768 , H01L21/8234 , H01L21/762 , H01L29/78 , H01L29/739
CPC classification number: H01L27/1207 , H01L21/761 , H01L21/76283 , H01L21/764 , H01L21/76895 , H01L21/823487 , H01L29/7397 , H01L29/7813 , H05K1/0256 , H05K1/0284 , H05K1/183 , H05K3/30 , H05K2201/10522 , Y10T29/4913
Abstract: According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.
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公开(公告)号：US20180065846A1
公开(公告)日：2018-03-08
申请号：US15695088
申请日：2017-09-05
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Steffen Bieselt , Alessia Scire
Abstract: A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. In a further step, the method comprises forming a support structure having a support structure material different from the semiconductor substrate material to close the opening at least partially by mechanically connecting the main surface area of the semiconductor substrate material with the bottom of the cavity. Furthermore, the method comprises a step of forming a lamella structure in the main surface area above the cavity such that the lamella structure is held spaced apart from the bottom of the cavity by the support structure.
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