公开(公告)号：US20090149016A1

公开(公告)日：2009-06-11

申请号：US12330416

申请日：2008-12-08

申请人： Jin-Woo PARK ,  Tae-Joo HWANG ,  Nam-Seog KIM

发明人： Jin-Woo PARK ,  Tae-Joo HWANG ,  Nam-Seog KIM

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/13565 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014

摘要： Provided is a semiconductor device and a method of fabricating the same. The method of fabricating the semiconductor device includes forming a mask pattern having an opening corresponding to an electrode pad formed on a semiconductor substrate; forming a bump by filling the opening with a conductive first material; forming a sidewall film on sidewalls of the bump using a second material; forming a connection member between an upper surface of the bump and a wire substrate using a conductive third material in order to electrically connect the bump and the wire substrate; and forming an underfill resin between the wire substrate and the semiconductor substrate, wherein a wetting angle between the second material and the third material is greater than that between the first material and the third material.

摘要翻译： 提供一种半导体器件及其制造方法。 制造半导体器件的方法包括形成具有对应于形成在半导体衬底上的电极焊盘的开口的掩模图案; 通过用导电的第一材料填充开口形成凸起; 使用第二材料在所述凸块的侧壁上形成侧壁膜; 在所述突起的上表面和使用导电的第三材料的金属基底之间形成连接构件，以便电连接所述凸块和所述金属丝基底; 以及在所述金属丝衬底和所述半导体衬底之间形成底部填充树脂，其中所述第二材料和所述第三材料之间的润湿角度大于所述第一材料和所述第三材料之间的润湿角度。

公开(公告)号：US20090134528A1

公开(公告)日：2009-05-28

申请号：US12253734

申请日：2008-10-17

申请人： Teak-Hoon LEE ,  Nam-Seog KIM ,  Pyoung-Wan KIM ,  Chul-Yong JANG

发明人： Teak-Hoon LEE ,  Nam-Seog KIM ,  Pyoung-Wan KIM ,  Chul-Yong JANG

IPC分类号： H01L23/52

CPC分类号： H01L23/5389 ,  H01L21/486 ,  H01L23/49816 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05023 ,  H01L2224/05572 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73217 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Provided are a semiconductor package, an electronic device including the semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes semiconductor chips mounted on a carrier, a first insulating layer sealing the semiconductor chips, first via-holes which are formed in the first insulating layer and expose a portion of each of the semiconductor chips, a first conductive pattern which is filled in the first via-holes and electrically connected to each of the semiconductor chips, and an external terminal which is electrically connected to the first conductive pattern. The semiconductor package is manufactured by performing an encapsulating process and a via-hole process.

摘要翻译： 提供半导体封装，包括半导体封装的电子器件和制造半导体封装的方法。 半导体封装包括安装在载体上的半导体芯片，密封半导体芯片的第一绝缘层，形成在第一绝缘层中并暴露每个半导体芯片的一部分的第一通孔，填充了第一导电图案 在第一通孔中并且电连接到每个半导体芯片，以及电连接到第一导电图案的外部端子。 通过执行封装处理和通孔处理来制造半导体封装。