摘要:
A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.
摘要:
A semiconductor module may include a circuit substrate with a first die on the circuit substrate and a second die on the first die. The first die may include at least one first data input/output pad on a first peripheral portion of the first die and at least one first control/address pad on a third peripheral portion, the third peripheral portion being separate from the first peripheral portion of the first die. The second die may include at least one second data input/output pad on a second peripheral portion and at least one second control/address pad on a fourth peripheral portion. The second peripheral portion of the second die is not overlapped with the first peripheral portion of the first die in plan view. The fourth peripheral portion of the second die overlaps at least a portion of the third peripheral portion of the first die.
摘要:
Provided is a chip stack package and a method of manufacturing the same. A chip stack package may include a base chip including a base substrate, a base through via electrode penetrating the base substrate, a base chip pad connected to the base through via electrode, and a base encapsulant. The chip stack package may further include at least one stack chip on a surface of the base substrate. The chip stack package may also include an external connection terminal connected to the base through via electrode and the base chip pad and protruding from the base encapsulant, and an external encapsulant surrounding and protecting outer surfaces of the base chip and the at least one stack chip, wherein the chip through via electrode and the chip pad are connected to the base through via electrode and the base chip pad of the base chip.
摘要:
A method of fabricating an electronic device having stacked chips is provided. The method includes forming a plurality of chips arranged in a row direction and at least one chip arranged in a column direction. A molding layer is formed between the chips. Grooves are formed in the molding layer between the chips arranged in the row direction. Conductive interconnections are formed on the substrate having the grooves. The substrate is sawn along an odd- or even-numbered one of the grooves to be separated into a plurality of unit substrates. At least one of the separated unit substrates is folded along an unsawn groove of the grooves.
摘要:
A semiconductor memory device has a hierarchical bit line structure. The semiconductor memory device may include first and second memory cell clusters, which share the same bit line pair and are divided operationally; third and fourth memory cell clusters, which are connected respectively corresponding to word lines coupled with the first and second memory cell clusters, and which share a bit line pair different from the bit line pair and are divided operationally; and a column pass gate for switching one of bit line pairs connected with the first to fourth memory cell clusters, to a common sense amplifier, in response to a column selection signal. Whereby an operating speed decrease caused by load of peripheral circuits connected to the bit line is improved, and the number of column pass gates is reduced substantially with a reduction of chip size.
摘要:
A stack package and a method of manufacturing the same are provided. The stack package includes one or more interposers in which a semiconductor chip having a bonding pad are inserted, an interconnection terminal groove is formed due to a difference of the areas between the semiconductor chip and a cavity into which the semiconductor chip is inserted, and an interconnection terminal connected to the bonding pad is formed in the interconnection terminal groove. In the stack package, the interposers are stacked with one another and the interconnection terminals are connected to one another such that one or more semiconductor chips are stacked and electrically connected.
摘要:
Provided is a stacked chip package and a method for forming the same. A spacer is formed on a side of an upper chip. A conductive line is formed on the spacer to electrically connect upper and lower chips. The reliability of the stacked chip package is improved because wire bonding is not used to electrically connect the upper and lower chips. Further, the overall size of the stacked chip package can be reduced as the height of bonding wire loops does not contribute to the overall stacked chip package height.
摘要:
Provided is an amplifier circuit having a constant output swing range and a stable delay time, where the amplifier circuit includes a first bias unit, a second bias unit, a comparison unit, and an amplifier unit, and the first bias unit responds to an internal reference signal with a predetermined voltage level and maintains constant the amount of a first current, and the second bias unit receives an external reference signal, responds to a control voltage, and controls the amount of a second current to be the same as the amount of the first current, and the comparison unit compares a voltage level of a first node with a voltage level of a second node, and controls a voltage level of the control voltage according to the comparison result, and the amplifier unit compares a voltage level of an external input signal with a voltage level of the external reference signal, amplifies and outputs a voltage difference between the two compared signals, responds to the control voltage, and controls the amount of a third current to be the same as the amount of the first current although the level of the external reference signal is varied, such that the amplifier circuit and a circuit for receiving data can maintain a constant output swing range and a stable delay time irrespective of variations in the voltage levels of the external input signal or the external reference signal.
摘要:
A reinforced solder bump connector structure is formed between a contact pad arranged on a semiconductor chip and a ball pad arranged on a mounting substrate. The semiconductor chip includes at least one reinforcing protrusion extending upwardly from a surface of an intermediate layer. The mounting substrate includes at least one reinforcing protrusion extending upwardly from a ball pad, the protrusions from both the chip and the substrate being embedded within the solder bump connector. In some configurations, the reinforcing protrusions from the contact pad and the ball pad are sized and arranged to have overlapping upper portions. These overlapping portions may assume a wide variety of configurations that allow the protrusions to overlap without contacting each other including pin arrays and combinations of surrounding and surrounded elements. In each configuration, the reinforcing protrusions will tend to suppress crack formation and/or crack propagation thereby improving reliability.
摘要:
A solder bump structure includes a contact pad, an intermediate layer located over the contact pad, a solder bump located over the intermediate layer, and at least one metal projection extending upwardly from a surface of the intermediate layer and embedded within the solder bump. Any crack in the solder bump will tend to propagate horizontally through the bump material, and in this case, the metal projections act as obstacles to crack propagation. These obstacles have the effect of increasing the crack resistance, and further lengthen the propagation path of any crack as it travels through the solder bump material, thus decreasing the likelihood device failure.